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    IMAGE SENSOR WITH IN-PIXEL BACKGROUND SUBTRACTION AND MOTION DETECTION
    1.
    发明申请
    IMAGE SENSOR WITH IN-PIXEL BACKGROUND SUBTRACTION AND MOTION DETECTION 有权

    公开(公告)号：US20220247943A1

    公开(公告)日：2022-08-04

    申请号：US17167768

    申请日：2021-02-04

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Zhiyong Zhan ,  Tongtong Yu ,  Zheng Yang ,  Wei Deng

    IPC: H04N5/353 ,  H04N5/33 ,  H04N5/3745

    Abstract: An imaging system includes a pixel array configured to generate image charge voltage signals in response to incident light received from an external scene. An infrared illumination source is deactivated during the capture of a first image of the external scene and activated during the capture of a second image of the external scene. An array of sample and hold circuits is coupled to the pixel array. Each sample and hold circuit is coupled to a respective pixel of the pixel array and includes first and second capacitors to store first and second image charge voltage signals of the captured first and second images, respectively. A column voltage domain differential amplifier is coupled to the first and second capacitors to determine a difference between the first and second image charge voltage signals to identify an object in a foreground of the external scene.

    IMAGE SENSOR WITH SHIFTED COLOR FILTER ARRAY PATTERN AND BIT LINE PAIRS
    2.
    发明申请
    IMAGE SENSOR WITH SHIFTED COLOR FILTER ARRAY PATTERN AND BIT LINE PAIRS 有权

    公开(公告)号：US20210337169A1

    公开(公告)日：2021-10-28

    申请号：US16855857

    申请日：2020-04-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

    IPC: H04N9/04 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/378

    Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

    CAPMID DESIGN IN VRFD FOR HDR STRUCTURE
    3.
    发明公开
    CAPMID DESIGN IN VRFD FOR HDR STRUCTURE 审中-公开

    公开(公告)号：US20240357253A1

    公开(公告)日：2024-10-24

    申请号：US18303479

    申请日：2023-04-19

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Zhe Gao ,  Ling Fu ,  Qing Qin ,  Zhiyong Zhan ,  Tiejun Dai

    IPC: H04N25/77 ,  H04N25/78

    CPC classification number: H04N25/77 ,  H04N25/78

    Abstract: A pixel circuit includes a photodiode configured to photo generate image charge in response to incident light, a floating diffusion coupled to receive the image charge from the photodiode, a transfer transistor coupled between the photodiode and the floating diffusion to transfer the image charge from the photodiode to the floating diffusion, a reset transistor coupled between a variable voltage source and the floating diffusion, wherein the reset transistor is configured to be switched in response to a reset control signal, and a lateral overflow integration capacitor (LOFIC) coupled between the variable voltage source and the floating diffusion. The variable voltage source is configured to output a high-voltage level during a high conversion gain (HCG) reset signal readout and an HCG image signal readout, and a mid-voltage level during a LOFIC image signal readout and a LOFIC reset signal readout.

    Pixel array with embedded split pixels for high dynamic range imaging
    5.
    发明授权
    Pixel array with embedded split pixels for high dynamic range imaging 有权

    公开(公告)号：US10334191B1

    公开(公告)日：2019-06-25

    申请号：US15910883

    申请日：2018-03-02

    Applicant: OmniVision Technologies, Inc.

    Inventor： Dajiang Yang ,  Zhiyong Zhan ,  Chen-wei Lu ,  Duli Mao ,  Xin Wang ,  Keiji Mabuchi

    IPC: H04N5/335 ,  H04N5/355 ,  H01L27/146 ,  H04N5/378

    Abstract: A pixel cell includes a second photodiode laterally surrounding a first photodiode in semiconductor material. The first and second photodiodes are adapted to photogenerate image charge in response to incident light. A floating diffusion is disposed in the semiconductor material proximate to an outer perimeter of the second photodiode. A first transfer gate is disposed proximate to the semiconductor material over a first channel region between the first and second photodiodes. The first transfer gate is coupled to transfer the image charge from the first photodiode to the second photodiode. A second transfer gate is disposed proximate to the semiconductor material over a second channel region between the second photodiode and the floating diffusion. The second transfer gate is coupled to transfer the image charge from the second photodiode to the floating diffusion.

    Image sensor with shifted color filter array pattern and bit line pairs
    6.
    发明授权
    Image sensor with shifted color filter array pattern and bit line pairs 有权

    公开(公告)号：US11284045B2

    公开(公告)日：2022-03-22

    申请号：US16855857

    申请日：2020-04-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

    IPC: H04N5/374 ,  H04N9/04 ,  H04N5/369 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/146

    Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

    Image sensor with frame level black level calibration
    7.
    发明授权
    Image sensor with frame level black level calibration 有权

    公开(公告)号：US11206392B1

    公开(公告)日：2021-12-21

    申请号：US16931194

    申请日：2020-07-16

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Liang Zuo ,  Min Qu ,  Xuelian Liu ,  Rui Wang ,  Zhe Gao ,  Zhiyong Zhan

    IPC: H04N17/00 ,  H04N5/3745 ,  H04N5/378

    Abstract: An image sensor includes a pixel array with active rows of pixel cells, a black level calibration row with black image data generation circuits coupled to generate black image data signals representative of an absence of the incident light, and a dummy row with black level clamping circuits coupled to receive a black sun reference voltage to clamp bitlines of the pixel array, and a black level calibration circuit coupled to receive the black sun reference voltage to generate a black sun calibration voltage. A black sun feedback circuit is coupled to generate the black sun reference voltage in response to the black sun calibration voltage and a black level sample reference, and a black level sampling circuit is coupled to the bitlines to sample the black image data signals to generate the black level sample reference received by the black sun feedback circuit.

    Image sensor with voltage buffer for self-test
    9.
    发明授权
    Image sensor with voltage buffer for self-test 有权

    公开(公告)号：US11122259B2

    公开(公告)日：2021-09-14

    申请号：US16793345

    申请日：2020-02-18

    Applicant: OmniVision Technologies, Inc.

    Inventor： Zhiyong Zhan ,  Tongtong Yu ,  Xin Wang ,  Liang Zuo ,  Kenny Geng

    IPC: G01R31/56 ,  H04N5/378 ,  H04N17/00

    Abstract: A test voltage sample and hold circuitry is disclosed in a readout circuitry of an image sensor. This circuitry samples a voltage at demand value based on a ramp voltage shared by the ADC comparators of the readout circuitry. The value of the sampled voltage is controlled by a control circuitry which is able to predict and calculate at what time a ramp generator may carry the demand voltage value. The sampled voltage is held by a hold capacitor during readout of one row and is accessed during the next row by the control circuitry as test data to drive a device under test (DUT) which may be any portion of the image sensor to be tested. Measured data out of the DUT is compared with expected data. Based on the result of the comparison, a signal indicates the pass or fail of the self-test concludes a self-test of the DUT.

    Image Sensor With Voltage Buffer For Self-Test
    10.
    发明申请
    Image Sensor With Voltage Buffer For Self-Test 有权

    公开(公告)号：US20210258563A1

    公开(公告)日：2021-08-19

    申请号：US16793345

    申请日：2020-02-18

    Applicant: OmniVision Technologies, Inc.

    Inventor： Zhiyong Zhan ,  Tongtong Yu ,  Xin Wang ,  Liang Zuo ,  Kenny Geng

    IPC: H04N17/00 ,  H04N5/378 ,  G01R31/56

    Abstract: A test voltage sample and hold circuitry is disclosed in a readout circuitry of an image sensor. This circuitry samples a voltage at demand value based on a ramp voltage shared by the ADC comparators of the readout circuitry. The value of the sampled voltage is controlled by a control circuitry which is able to predict and calculate at what time a ramp generator may carry the demand voltage value. The sampled voltage is held by a hold capacitor during readout of one row and is accessed during the next row by the control circuitry as test data to drive a device under test (DUT) which may be any portion of the image sensor to be tested. Measured data out of the DUT is compared with expected data. Based on the result of the comparison, a signal indicates the pass or fail of the self-test concludes a self-test of the DUT.

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