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    Optoelectronic component
    2.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号：US09391252B2

    公开(公告)日：2016-07-12

    申请号：US14524914

    申请日：2014-10-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Georg Hartung ,  Marcus Zenger ,  Barbara Behr

    IPC: H01L33/62 ,  H01L33/48 ,  H01L33/60 ,  H01L33/38 ,  H01L33/44

    CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L33/44 ,  H01L33/486 ,  H01L33/60

    Abstract: An optoelectronic component comprising a semiconductor body, a first connection layer, an insulation layer and a second connection layer, wherein the semiconductor body has an active region for generating electromagnetic radiation and the second connection layer comprises a first partial layer and a second partial layer is specified, wherein the insulation layer electrically insulates the first connection layer from the second connection layer, the first partial layer is arranged between the second partial layer and the semiconductor body in a vertical direction, in a plan view of the semiconductor body the first connection layer overlaps the first partial layer and is spaced apart from the second partial layer in a lateral direction, and the first connection layer has a first layer thickness and the second partial layer has a second layer thickness, wherein the first layer thickness and the second layer thickness differ from one another at most by 20%.

    Abstract translation: 一种包括半导体本体，第一连接层，绝缘层和第二连接层的光电子元件，其中所述半导体本体具有用于产生电磁辐射的有源区，所述第二连接层包括第一部分层和第二部分层 其中所述绝缘层将所述第一连接层与所述第二连接层电绝缘，所述第一部分层在垂直方向上布置在所述第二部分层和所述半导体本体之间，在所述半导体本体的平面图中，所述第一连接层 与第一部分层重叠并且在横向方向上与第二部分层间隔开，并且第一连接层具有第一层厚度，并且第二部分层具有第二层厚度，其中第一层厚度和第二层厚度 最多相差20％。

    OPTOELECTRONIC SEMICONDUCTOR CHIP ENCAPSULATED WITH AN ALD LAYER AND CORRESPONDING METHOD OF PRODUCTION
    4.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP ENCAPSULATED WITH AN ALD LAYER AND CORRESPONDING METHOD OF PRODUCTION 审中-公开
    带有ALD层的光电子半导体芯片和相应的生产方法

    公开(公告)号：US20160005930A1

    公开(公告)日：2016-01-07

    申请号：US14769125

    申请日：2014-03-14

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Karl Engl ,  Georg Hartung ,  Markus Maute

    IPC: H01L33/46 ,  H01L33/38 ,  H01L33/54

    CPC classification number: H01L33/46 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor chip includes a semiconductor body including n-conducting and p-conducting regions, an active region generating electromagnetic radiation, a mirror layer reflecting the electromagnetic radiation, and an encapsulating layer sequence formed with an insulating material, wherein the mirror layer is arranged at an underside of the p-conducting region, the active region is arranged at a side of the p-conducting region facing away from the mirror layer, the n-conducting region is arranged at a side of the active region facing away from the p-conducting region, the encapsulation layer sequence covers the semiconductor body at the outer surface thereof in places, the encapsulation layer sequence extends at the outer surface of the semiconductor body from the active region along the p-conducting region as far as below the mirror layer, and the encapsulation layer sequence includes at least one encapsulation layer which is an ALD layer or consists of an ALD layer.

    Abstract translation: 光电子半导体芯片包括：半导体本体，其包括n导电和p导电区域，产生电磁辐射的有源区域，反射电磁辐射的反射镜层以及由绝缘材料形成的封装层序列，其中所述镜层布置 在p导电区域的下侧，有源区域布置在p导电区域背离镜面层的一侧，n导电区域布置在有源区域背离p的一侧 封装层序列在其外表面覆盖半导体本体，封装层序列在半导体本体的外表面沿着p导电区域的有源区域延伸到镜面层的下方 ，并且封装层序列包括至少一个作为ALD层或由ALD层组成的封装层。

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