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    Optoelectronic Semiconductor Chip
    2.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开

    公开(公告)号：US20190259911A1

    公开(公告)日：2019-08-22

    申请号：US16315463

    申请日：2017-07-11

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Roland Zeisel ,  Michael Binder ,  Jens Ebbecke ,  Tobias Meyer

    IPC: H01L33/22 ,  H01L33/06 ,  H01L33/02

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.

    Method and Device for Measuring and Optimizing an Optoelectronic Component
    3.
    发明申请
    Method and Device for Measuring and Optimizing an Optoelectronic Component 审中-公开
    用于测量和优化光电元件的方法和装置

    公开(公告)号：US20160003890A1

    公开(公告)日：2016-01-07

    申请号：US14769788

    申请日：2014-03-06

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Robert Schulz ,  Anton Vogl ,  Raimund Oberschmid ,  Roland Zeisel ,  Michael Dietz

    IPC: G01R31/26 ,  H05B37/02 ,  G01R31/02

    CPC classification number: G01R31/2635 ,  G01N2201/061 ,  G01R31/025 ,  H05B37/0227

    Abstract: A method can be used for measuring at least one optoelectronic component arranged on a connection carrier. The method includes exciting an electromagnetic oscillating circuit, which is formed by the optoelectronic component and the connection carrier, thus exciting the optoelectronic component in such a way that the optoelectronic component emits electromagnetic radiation, and measuring at least one electro-optical property of the optoelectronic component.

    Abstract translation: 一种方法可用于测量布置在连接载体上的至少一个光电子部件。 该方法包括激励由光电子部件和连接载体形成的电磁振荡电路，从而以光电子部件发射电磁辐射的方式激发光电子部件，并且测量光电子学的至少一个电光学特性 零件。

    Method and device for electrically contacting components in a semiconductor wafer
    4.
    发明授权
    Method and device for electrically contacting components in a semiconductor wafer 有权

    公开(公告)号：US11796567B2

    公开(公告)日：2023-10-24

    申请号：US17440912

    申请日：2020-03-09

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Michael Bergler ,  Roland Zeisel

    IPC: G01R1/073 ,  G01R1/04

    CPC classification number: G01R1/0735 ,  G01R1/0491

    Abstract: A method for electrically contacting components in a semiconductor wafer includes providing a flexible board comprising a first main surface on which a plurality of conductor tracks are arranged, positioning the board with respect to a semiconductor wafer such that the first main surface of the board faces the semiconductor wafer, the board is bent and pressed onto the semiconductor wafer in such a way that contact elements of a plurality of components arranged in a row in the semiconductor wafer come into contact with the conductor tracks, and electrical signals are applied to the components through the conductor tracks.

    Optoelectronic Semiconductor Component
    5.
    发明申请
    Optoelectronic Semiconductor Component 有权

    公开(公告)号：US20220393058A1

    公开(公告)日：2022-12-08

    申请号：US17774104

    申请日：2020-11-03

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Michael Binder ,  Andreas Rückerl ,  Roland Zeisel ,  Tobias Meyer ,  Kerstin Neveling ,  Christine Rafael ,  Moses Richter ,  Rainer Hartmann ,  Clemens Vierheilig

    IPC: H01L33/00 ,  H01L33/44

    Abstract: In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

    Method and Device for Measurement of a Plurality of Semiconductor Chips in a Wafer Array
    7.
    发明申请
    Method and Device for Measurement of a Plurality of Semiconductor Chips in a Wafer Array 审中-公开

    公开(公告)号：US20190189527A1

    公开(公告)日：2019-06-20

    申请号：US16323237

    申请日：2017-07-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Holger Specht ,  Roland Zeisel ,  Anton Vogl ,  Jens Ebbecke

    IPC: H01L21/66 ,  G01R31/265 ,  G01R31/26

    CPC classification number: H01L22/12 ,  G01R31/2601 ,  G01R31/2656 ,  G01R31/311

    Abstract: A method and a device for measuring a plurality of semiconductor chips in a wafer array are disclosed. In an embodiment a method for measuring the semiconductor chips in a wafer array, wherein the wafer array is arranged on an electrically conductive carrier so that in each case back contacts of the semiconductor chips are contacted by the carrier, wherein a contact structure is arranged on a side of the wafer array facing away from the carrier, and wherein the contact structure includes a contact element and/or a plurality of radiation-emitting measurement semiconductor chips, includes applying a voltage between the contact structure and the carrier and measuring the semiconductor chips depending on a luminous image which is generated by emitted radiation which is caused simultaneously by fluorescence when the semiconductor chips are illuminated or by a radiation-emitting operation of the measurement semiconductor chips when the voltage is applied.

    Radiation-emitting component
    10.
    发明授权
    Radiation-emitting component 有权

    公开(公告)号：US11011573B2

    公开(公告)日：2021-05-18

    申请号：US16608455

    申请日：2018-05-28

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Roland Zeisel

    IPC: H01L27/15 ,  H01L29/20 ,  H01L29/778 ,  H01L33/30

    Abstract: A radiation-emitting component includes a semiconductor layer sequence including first and second semiconductor layers, and an active region and is arranged between the first and second semiconductor layers, first and second electrodes electrically connect to the first and second semiconductor layers, a semiconductor layer sequence generates electromagnetic radiation depending on a current flow between the first and second electrodes, a driver field-effect transistor includes at least one driver gate and at least one driver channel, the second electrode and the driver channel electrode separately electrically connect to the driver channel and the driver gate electrode electrically connects to the driver gate, and the driver field-effect transistor is configured to control a current flow between the driver channel electrode and the second electrode through the driver channel and thereby the current flow between the first and second electrodes, depending on a voltage applied to the driver gate electrode.

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