公开(公告)号：US20160003890A1

公开(公告)日：2016-01-07

申请号：US14769788

申请日：2014-03-06

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Robert Schulz ,  Anton Vogl ,  Raimund Oberschmid ,  Roland Zeisel ,  Michael Dietz

IPC: G01R31/26 ,  H05B37/02 ,  G01R31/02

CPC classification number: G01R31/2635 ,  G01N2201/061 ,  G01R31/025 ,  H05B37/0227

Abstract: A method can be used for measuring at least one optoelectronic component arranged on a connection carrier. The method includes exciting an electromagnetic oscillating circuit, which is formed by the optoelectronic component and the connection carrier, thus exciting the optoelectronic component in such a way that the optoelectronic component emits electromagnetic radiation, and measuring at least one electro-optical property of the optoelectronic component.

Abstract translation: 一种方法可用于测量布置在连接载体上的至少一个光电子部件。 该方法包括激励由光电子部件和连接载体形成的电磁振荡电路，从而以光电子部件发射电磁辐射的方式激发光电子部件，并且测量光电子学的至少一个电光学特性 零件。

公开(公告)号：US20190189527A1

公开(公告)日：2019-06-20

申请号：US16323237

申请日：2017-07-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Holger Specht ,  Roland Zeisel ,  Anton Vogl ,  Jens Ebbecke

IPC: H01L21/66 ,  G01R31/265 ,  G01R31/26

CPC classification number: H01L22/12 ,  G01R31/2601 ,  G01R31/2656 ,  G01R31/311

Abstract: A method and a device for measuring a plurality of semiconductor chips in a wafer array are disclosed. In an embodiment a method for measuring the semiconductor chips in a wafer array, wherein the wafer array is arranged on an electrically conductive carrier so that in each case back contacts of the semiconductor chips are contacted by the carrier, wherein a contact structure is arranged on a side of the wafer array facing away from the carrier, and wherein the contact structure includes a contact element and/or a plurality of radiation-emitting measurement semiconductor chips, includes applying a voltage between the contact structure and the carrier and measuring the semiconductor chips depending on a luminous image which is generated by emitted radiation which is caused simultaneously by fluorescence when the semiconductor chips are illuminated or by a radiation-emitting operation of the measurement semiconductor chips when the voltage is applied.

公开(公告)号：US10132855B2

公开(公告)日：2018-11-20

申请号：US14769788

申请日：2014-03-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Robert Schulz ,  Anton Vogl ,  Raimund Oberschmid ,  Roland Zeisel ,  Michael Dietz

IPC: G01R31/26 ,  G01R31/02 ,  H05B37/02

Abstract: A method can be used for measuring at least one optoelectronic component arranged on a connection carrier. The method includes exciting an electromagnetic oscillating circuit, which is formed by the optoelectronic component and the connection carrier, thus exciting the optoelectronic component in such a way that the optoelectronic component emits electromagnetic radiation, and measuring at least one electro-optical property of the optoelectronic component.

公开(公告)号：US09972748B2

公开(公告)日：2018-05-15

申请号：US14927325

申请日：2015-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Leirer ,  Anton Vogl ,  Andreas Biebersdorf ,  Rainer Butendeich ,  Christian Rumbolz

IPC: H01L33/20 ,  H01L21/02 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/22 ,  H01L2933/0091

Abstract: A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.

公开(公告)号：US10288671B2

公开(公告)日：2019-05-14

申请号：US15547948

申请日：2016-01-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Robert Schulz ,  Anton Vogl ,  Roland Zeisel

IPC: G01R31/26 ,  G01R31/28

Abstract: A method and a device for inspecting an optoelectronic component are disclosed. In an embodiment, the method includes exciting at least one electromagnetic resonant circuit, formed by the at least one optoelectronic component and the connection board, such that the at least one optoelectronic component emits electromagnetic radiation, wherein exciting the electromagnetic resonant circuit comprises applying an electrical alternating voltage in the electromagnetic resonant circuit by generating a temporally variable electromagnetic alternating field by a first coil and a second coil, wherein the first coil and the second coil are movable with respect to the connection board.

公开(公告)号：US20180024185A1

公开(公告)日：2018-01-25

申请号：US15547948

申请日：2016-01-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Robert Schulz ,  Anton Vogl ,  Roland Zeisel

IPC: G01R31/26

CPC classification number: G01R31/2635 ,  G01R31/2831

Abstract: A method and a device for inspecting an optoelectronic component are disclosed. In an embodiment, the method includes exciting at least one electromagnetic resonant circuit, formed by the at least one optoelectronic component and the connection board, such that the at least one optoelectronic component emits electromagnetic radiation, wherein exciting the electromagnetic resonant circuit comprises applying an electrical alternating voltage in the electromagnetic resonant circuit by generating a temporally variable electromagnetic alternating field by a first coil and a second coil, wherein the first coil and the second coil are movable with respect to the connection board.

公开(公告)号：US20160049550A1

公开(公告)日：2016-02-18

申请号：US14927325

申请日：2015-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Leirer ,  Anton Vogl ,  Andreas Biebersdorf ,  Rainer Butendeich ,  Christian Rumbolz

IPC: H01L33/20

CPC classification number: H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/22 ,  H01L2933/0091

Abstract: A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.

Abstract translation: 提供一种制造薄膜半导体体的方法。 提供生长衬底。 在生长衬底上外延生长具有漏斗形和/或倒置金字塔形凹陷的半导体层。 这些凹部以半导体材料填充，使得出现棱锥形的外耦合结构。 具有有源层的半导体层序列被应用于外耦合结构。 有源层适用于产生电磁辐射。 将载体施加到半导体层序列上。 至少具有漏斗形和/或倒置金字塔状凹部的半导体层被分离，使得金字塔形外耦合结构被配置为在薄膜半导体的辐射出射面上的突起。