-
公开(公告)号：US10181700B2
公开(公告)日：2019-01-15
申请号：US15029372
申请日：2014-10-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christoph Eichler , Jens Müller , Fabian Kopp
Abstract: A semiconductor laser includes a main body and a ridge structure arranged on the main body, the ridge structure being oriented along a longitudinal axis above an active zone, wherein the ridge structure has a first width, the ridge structure has two opposite end faces along the longitudinal axis, adjacent to at least one end face, the ridge structure has an end section arranged on one side with respect to a center axis of the ridge structure such that the ridge structure is widened on one side adjacent to the end face, and on an opposite side of the ridge structure relative to the end section a fracture trench is arranged adjacent to the end face and at a distance from the ridge structure in a surface of the main body.
-
公开(公告)号：US20190229240A1
公开(公告)日：2019-07-25
申请号：US16256897
申请日：2019-01-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander F. Pfeuffer , Sophia Huppmann , Andrea Winnerl , Jens Müller
Abstract: An optoelectronic device and a method are disclosed. In an embodiment an optoelectronic device includes a semiconductor body having a layer sequence with an active region configured to generate radiation, a first dielectric layer arranged on the layer sequence having a plurality of first areas and a second area, a first contact via in each area of the plurality of first areas for contacting a first side of the active region, a second contact via in the second area for contacting a second side of the active region and a conductive layer comprising a plurality of first regions and a second region surrounding the plurality of first regions and electrically isolated from the plurality of first regions, the conductive layer having a substantially planar surface and being arranged planar onto the plurality of first areas and the second area such that each of the plurality of first regions of the conductive layer is in contact with the first contact via in the respective area of the plurality of first areas and the second region of the conductive layer is in contact with the second contact via of the first dielectric layer.
-
公开(公告)号：US20180212107A1
公开(公告)日：2018-07-26
申请号：US15742871
申请日：2016-07-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Philipp Kreuter , Markus Bröll , Jens Müller
CPC classification number: H01L33/382 , H01L33/0062 , H01L33/20 , H01L33/62
Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment, the chip includes a semiconductor layer sequence with a first side, a second side and an active zone and at least one via electrically contacting the first side with the second side through the active zone, wherein the via has a base region including a cylinder, a truncated cone or a truncated pyramid, wherein the via is surrounded in a lateral direction by an electric insulation layer, wherein the via has a contact region including a truncated cone, a truncated pyramid, or a spherical or aspherical body, wherein the contract region directly follows the base region, wherein the contact region is in direct contact with the second side, wherein a first flank angle of the base region is different from a second flank angle of the contact region, and wherein the first and second flank angles are related to the lateral direction.
-
Patent Agency Ranking
公开(公告)号：US10242949B2
公开(公告)日：2019-03-26
申请号：US15566423
申请日：2016-04-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Kurz , Sven Gerhard , Andreas Löffler , Jens Müller
IPC: H01L23/544 , H01L33/00 , H01L33/38 , H01S5/022
Abstract: An arrangement includes a confining layer, a metallization layer and a semiconductor component, wherein the metallization layer is arranged on the semiconductor component, and the confining layer is arranged on the metallization layer, the confining layer spatially establishes a reservoir for the marker material at least partially in a defined manner, the confining layer and the metallization layer include an identical material, and the marker material is arranged in the reservoir of the arrangement.
-
公开(公告)号：US20160268775A1
公开(公告)日：2016-09-15
申请号：US15029372
申请日：2014-10-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Christoph Eichler , Jens Müller , Fabian Kopp
CPC classification number: H01S5/22 , H01S5/0202 , H01S5/028 , H01S5/1014 , H01S5/1017 , H01S5/4031
Abstract: A semiconductor laser includes a main body and a ridge structure arranged on the main body, the ridge structure being oriented along a longitudinal axis above an active zone, wherein the ridge structure has a first width, the ridge structure has two opposite end faces along the longitudinal axis, adjacent to at least one end face, the ridge structure has an end section arranged on one side with respect to a center axis of the ridge structure such that the ridge structure is widened on one side adjacent to the end face, and on an opposite side of the ridge structure relative to the end section a fracture trench is arranged adjacent to the end face and at a distance from the ridge structure in a surface of the main body.
Abstract translation: 半导体激光器包括主体和布置在主体上的脊结构，脊结构沿着活动区域上方的纵向轴线定向，其中脊结构具有第一宽度，脊结构具有沿着第二宽度的两个相对端面 纵向轴线与至少一个端面相邻，所述脊状结构具有相对于所述脊状结构的中心轴线一侧布置的端部，使得所述脊部结构在邻近所述端面的一侧上变宽，并且在 相对于端部部分，脊部结构的相反侧，断裂沟槽被布置成与主体的表面中的端面相距离脊部结构。
-
公开(公告)号：US20180102323A1
公开(公告)日：2018-04-12
申请号：US15566423
申请日：2016-04-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Kurz , Sven Gerhard , Andreas Löffler , Jens Müller
IPC: H01L23/544 , H01S5/022
CPC classification number: H01L23/544 , H01L33/0095 , H01L33/38 , H01L2223/5442 , H01L2223/54426 , H01L2223/54433 , H01L2223/5448 , H01L2223/54493 , H01S5/02268
Abstract: An arrangement includes a confining layer, a metallization layer and a semiconductor component, wherein the metallization layer is arranged on the semiconductor component, and the confining layer is arranged on the metallization layer, the confining layer spatially establishes a reservoir for the marker material at least partially in a defined manner, the confining layer and the metallization layer include an identical material, and the marker material is arranged in the reservoir of the arrangement.
-
公开(公告)号：US09787055B2
公开(公告)日：2017-10-10
申请号：US15119546
申请日：2015-03-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Müller , Alfred Lell , Uwe Strauβ
CPC classification number: H01S5/02476 , H01S5/0224 , H01S5/02469 , H01S5/02484 , H01S5/0425 , H01S5/168 , H01S5/2214 , H01S5/222 , H01S5/2226 , H01S5/32341 , H01S2301/176
Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.
-
公开(公告)号：US20170054271A1
公开(公告)日：2017-02-23
申请号：US15119546
申请日：2015-03-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Müller , Alfred Lell , Uwe Strauß
CPC classification number: H01S5/02476 , H01S5/0224 , H01S5/02469 , H01S5/02484 , H01S5/0425 , H01S5/168 , H01S5/2214 , H01S5/222 , H01S5/2226 , H01S5/32341 , H01S2301/176
Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.
Abstract translation: 公开了半导体条激光器和半导体部件。 在实施例中，激光器包括半导体主体的第一导电类型的第一半导体区域，半导体主体的第二不同导电类型的第二半导体区域，半导体主体的至少一个有源区域被配置为在第二半导体区域之间产生激光辐射 第一和第二半导体区域。 激光器还包括至少在第二半导体区域中形成的带状波导，并且在运行期间沿着在有源区域中产生的激光辐射的波导方向提供一维波导，在第一半导体区域上的第一电接触， 在第二半导体区域上的第二电接触和至少一个尺寸稳定地连接到半导体本体的散热器，至少达到220℃的温度，并且具有至少50W / m·K的平均热导率。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.02 seconds)
