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公开(公告)号:US20180219047A1
公开(公告)日:2018-08-02
申请号:US15939381
申请日:2018-03-29
Inventor: TAKEYOSHI TOKUHARA , TOKUHIKO TAMAKI
CPC classification number: H01L27/307 , G01J1/0407 , G01J1/42 , G01J5/0853 , G01J5/24 , H01L51/0077 , H01L51/4273 , H01L51/442 , H04N5/33 , H04N5/378 , Y02E10/549
Abstract: A photosensor includes: a first electrode; a second electrode; a photoelectric conversion layer that is located between the first and second electrodes and generates electric charges; a first charge blocking layer located between the first electrode and the photoelectric conversion layer; a second charge blocking layer located between the second electrode and the photoelectric conversion layer; a voltage supply circuit that applies a voltage to at least one of the first and second electrodes such that an electric field is generated in the photoelectric conversion layer; and a detection circuit that detects a signal corresponding to a change in capacitance between the first and second electrodes. The first charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the first electrode. The second charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the second electrode.
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公开(公告)号:US20170328776A1
公开(公告)日:2017-11-16
申请号:US15662654
申请日:2017-07-28
Inventor: NAOKI SHIMASAKI , TOKUHIKO TAMAKI , SANSHIRO SHISHIDO
IPC: G01J5/08 , H04N5/232 , H04N3/14 , H01L27/146 , G01J1/04 , G01J5/20 , G01J3/36 , G01J1/42 , H04N5/33
CPC classification number: G01J5/0853 , G01J1/0407 , G01J1/42 , G01J3/36 , G01J5/0846 , G01J5/20 , H01L27/14609 , H01L27/14643 , H01L27/14665 , H01L27/14676 , H04N3/1512 , H04N5/23241 , H04N5/33 , H04N5/3575 , H04N5/3745 , H04N5/378
Abstract: An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer: a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.
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公开(公告)号:US20170272662A1
公开(公告)日:2017-09-21
申请号:US15442078
申请日:2017-02-24
Inventor: TOKUHIKO TAMAKI , TAKEYOSHI TOKUHARA
IPC: H04N5/243 , H04N5/378 , H04N5/369 , H01L27/146
CPC classification number: H04N5/243 , H01L27/14612 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H04N5/33 , H04N5/3698 , H04N5/378
Abstract: A photosensor includes a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a transistor having a gate, a source and a drain; a connector electrically connecting the first electrode and the gate together; and one or more wiring layers including a part of the connector. The transistor outputs an electric signal from one of the source and the drain, the electric signal corresponding to a change in dielectric constant between the first electrode and the second electrode, the change being caused by incident light on the photoelectric conversion layer. The one or more wiring layers include a first line coupled to the one of the source and the drain and a second line supplied with a fixed voltage in a period during operation. A distance between the first line and the connector is less than a distance between the second line and the connector.
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公开(公告)号:US20160119562A1
公开(公告)日:2016-04-28
申请号:US14876500
申请日:2015-10-06
Inventor: MASAYUKI TAKASE , TAKAYOSHI YAMADA , TOKUHIKO TAMAKI
IPC: H04N5/372 , H04N5/378 , H01L27/146 , H04N5/351
CPC classification number: H01L27/14603 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/14667 , H01L27/307 , H04N5/353 , H04N5/378
Abstract: An imaging device, comprising: at least one unit pixel cell; and a voltage application circuit that generates at least two different voltages, each of the at least one unit pixel cell comprising: a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface, a pixel electrode located on the first surface, an auxiliary electrode located on the first surface, the auxiliary electrode being separated from the pixel electrode and electrically connected to the voltage application circuit, an upper electrode located on the second surface, the upper electrode opposing to the pixel electrode and the auxiliary electrode, a charge storage node electrically connected to the pixel electrode, and a charge detection circuit electrically connected to the charge storage node.
Abstract translation: 一种成像装置,包括:至少一个单位像素单元; 以及电压施加电路,其生成至少两个不同的电压,所述至少一个单位像素单元中的每一个包括:光电转换层,具有第一表面和与所述第一表面相对的一侧的第二表面,位于 位于第一表面上的辅助电极,辅助电极与像素电极分离并电连接到电压施加电路,位于第二表面上的上电极,与像素电极相对的上电极和 辅助电极,电连接到像素电极的电荷存储节点,以及电连接到电荷存储节点的电荷检测电路。
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公开(公告)号:US20160105622A1
公开(公告)日:2016-04-14
申请号:US14857699
申请日:2015-09-17
Inventor: TOKUHIKO TAMAKI
CPC classification number: H04N5/378 , H04N5/2253 , H04N5/2254 , H04N5/35563 , H04N5/3696
Abstract: An imaging device according to one aspect of the present disclosure includes: a first image pickup cell comprising a first photoelectric converter that converts incident light into a first charge, a first charge detection circuit that is electrically connected to the first photoelectric converter and detects the first charge, and a first capacitive element one end of which is electrically connected to the first photoelectric converter, the first capacitive element storing at least a part of the first charge; and a second image pickup cell comprising a second photoelectric converter that converts incident light into a second charge, and a second charge detection circuit that is electrically connected to the second photoelectric converter and detects the second charge.
Abstract translation: 根据本公开的一个方面的成像装置包括:第一图像拾取单元,包括将入射光转换成第一电荷的第一光电转换器,电连接到第一光电转换器的第一电荷检测电路, 电荷,第一电容元件,其一端电连接到第一光电转换器,第一电容元件存储第一电荷的至少一部分; 以及第二图像拾取单元,包括将入射光转换成第二电荷的第二光电转换器,以及电连接到第二光电转换器并检测第二电荷的第二电荷检测电路。
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公开(公告)号:US20180249101A1
公开(公告)日:2018-08-30
申请号:US15963410
申请日:2018-04-26
Inventor: YASUO MIYAKE , MASASHI MURAKAMI , TOKUHIKO TAMAKI , YOSHIAKI SATOU
IPC: H04N5/353 , H01L27/146 , H04N5/355 , H04N5/378 , H04N5/369
CPC classification number: H04N5/353 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H01L27/14669 , H01L27/307 , H01L51/0078 , H04N5/3532 , H04N5/35554 , H04N5/3698 , H04N5/378 , Y02E10/549
Abstract: An imaging device including: unit pixel cells each including a first electrode, a second electrode, a photoelectric conversion layer, a charge accumulation region connected to the first electrode, and a signal detection circuit connected to the charge accumulation region; and a voltage supply circuit connected to the second electrode, the voltage supply circuit supplying a first voltage to the second electrode in a first period, the voltage supply circuit supplying a second voltage that is different from the first voltage to the second electrode in a second period. Each unit pixel cells includes a reset transistor which switches between supply and cutoff of a reset voltage initializing the charge accumulation region, and a potential difference between the first electrode and the second electrode when the reset voltage is supplied is greater than a potential difference between the first electrode and the second electrode after the reset voltage is cut off.
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公开(公告)号:US20170214873A1
公开(公告)日:2017-07-27
申请号:US15406822
申请日:2017-01-16
Inventor: KAZUKO NISHIMURA , TOKUHIKO TAMAKI , MASASHI MURAKAMI
IPC: H04N5/369 , H01L27/146 , H04N5/3745 , H04N5/378 , H04N5/363 , H04N5/359
CPC classification number: H04N5/3696 , H01L27/14614 , H01L27/14636 , H01L27/14643 , H04N5/35563 , H04N5/359 , H04N5/363 , H04N5/3745 , H04N5/37457 , H04N5/378
Abstract: An imaging device includes: a first pixel cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal detection circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second pixel cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal detection circuit that is electrically connected to the second photoelectric converter and detects the second signal. A sensitivity of the first pixel cell is higher than a sensitivity of the second pixel cell. A circuit configuration of the first signal detection circuit is different from a circuit configuration of the second signal detection circuit.
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公开(公告)号:US20160119563A1
公开(公告)日:2016-04-28
申请号:US14878180
申请日:2015-10-08
Inventor: TAKAYOSHI YAMADA , MASAYUKI TAKASE , TOKUHIKO TAMAKI , MASASHI MURAKAMI
IPC: H04N5/372 , H04N5/359 , H01L27/146 , H04N5/378
CPC classification number: H04N5/359 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14645 , H01L27/14667 , H04N5/23232 , H04N5/265 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/378
Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. The charge detection circuit includes a reset transistor that sets the pixel electrode at an initialization voltage at predetermined timing. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the initialization voltage and the counter voltage.
Abstract translation: 成像装置包括至少一个单位像素单元。 它们各自包括:具有第一和第二表面的光电转换层; 位于第一表面上并分离的像素电极和屏蔽电极,屏蔽电压施加到屏蔽电极; 位于所述第二表面上并与所述像素电极和所述屏蔽电极相对的上电极,对电压施加到所述上电极; 电连接到像素电极的电荷累积节点; 以及与电荷累积结点电连接的电荷检测电路。 电荷检测电路包括将像素电极设置在预定定时的初始化电压的复位晶体管。 屏蔽电压和对置电压之间的差的绝对值大于初始化电压和反电压之差的绝对值。
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公开(公告)号:US20150195466A1
公开(公告)日:2015-07-09
申请号:US14666200
申请日:2015-03-23
Inventor: MASAYUKI TAKASE , YOSHIHIRO SATO , JUNJI HIRASE , TOKUHIKO TAMAKI
CPC classification number: H04N5/369 , G02B13/0015 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14665 , H04N5/23212 , H04N5/3696
Abstract: A solid-state imaging device has a plurality of imaging-purpose pixels and a plurality of focus detection-purpose pixels. Each of the imaging-purpose pixels are provided with a first lower electrode, a photoelectric conversion film formed on the first lower electrode, and an upper electrode formed on the photoelectric conversion film. Each of the focus detection-purpose pixels is provided with a second lower electrode, the photoelectric conversion film formed on the second lower electrode, and the upper electrode formed on the photoelectric conversion film. The area of the second lower electrode is smaller than the area of the first lower electrodes. The second lower electrode is provided on a position deviating from a pixel center of a corresponding focus detection-pixel, and two second lower electrodes corresponding to two focus detection purpose pixels included in the plurality of focus detection purpose pixels is arranged in mutually opposite directions.
Abstract translation: 固态成像装置具有多个成像目的像素和多个焦点检测目的像素。 每个成像目的像素设置有形成在第一下电极上的第一下电极,光电转换膜和形成在光电转换膜上的上电极。 每个焦点检测目的像素设置有第二下部电极,形成在第二下部电极上的光电转换膜和形成在光电转换膜上的上部电极。 第二下部电极的面积小于第一下部电极的面积。 第二下电极设置在偏离对应的焦点检测像素的像素中心的位置,并且与多个焦点检测目的像素中包括的两个焦点检测目的像素相对应的两个第二下部电极被布置在相互相反的方向上。
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公开(公告)号:US20180020171A1
公开(公告)日:2018-01-18
申请号:US15719456
申请日:2017-09-28
Inventor: YASUO MIYAKE , MASASHI MURAKAMI , TOKUHIKO TAMAKI , YOSHIAKI SATOU
IPC: H04N5/353 , H01L27/146 , H04N5/355 , H04N5/378 , H04N5/369
CPC classification number: H04N5/353 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H01L27/14669 , H04N5/3532 , H04N5/35554 , H04N5/3698 , H04N5/378 , Y02E10/549
Abstract: An imaging device includes: unit pixel cells each including first and second electrodes, a photoelectric conversion layer therebetween, a charge accumulation region, and a signal detection circuit; and a voltage supply circuit, the voltage supply circuit supplying a first voltage to the second electrode in an exposure period. The start and end of the exposure period is common to the unit pixel cells. The photoelectric conversion layer has a photocurrent characteristic including first to third voltage ranges. In the third voltage range between the first and second voltage ranges, an absolute value of a rate of change of a current density relative to a bias voltage is less than in the first and second voltage ranges. The voltage supply circuit supplies a second voltage to the second electrode in a non-exposure period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.
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