公开(公告)号：US20160197050A1

公开(公告)日：2016-07-07

申请号：US15071545

申请日：2016-03-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Toshihiko AKIBA ,  Akihiro TOBITA ,  Yuki YAGYU

IPC: H01L23/00 ,  H01L21/66

CPC classification number: H01L24/05 ,  H01L21/4885 ,  H01L22/14 ,  H01L22/32 ,  H01L24/03 ,  H01L24/29 ,  H01L24/32 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/0382 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05555 ,  H01L2224/05578 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05673 ,  H01L2224/05684 ,  H01L2224/16012 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8501 ,  H01L2224/85375 ,  H01L2224/97 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/013 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

Abstract: A manufacturing method of a BGA, includes the steps of: providing a semiconductor chip having electrode pads; and removing a natural oxide film formed on the surface of each of the electrode pads. Further, a first film comprised of a conductive member is formed on the surface of the electrode pad exposed by removing the natural oxide film, a wire is connected with the first film, and part of the wire is brought into contact with the electrode pad to form an alloy layer at the interface between the wire and the electrode pad. The crystal structure of the first film is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. The cost of the semiconductor device can be reduced while the bonding reliability of wire bonding of the semiconductor device is ensured.

公开(公告)号：US20150333030A1

公开(公告)日：2015-11-19

申请号：US14711014

申请日：2015-05-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Toshihiko AKIBA ,  Akihiro TOBITA ,  Yuki YAGYU

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L21/4885 ,  H01L22/14 ,  H01L22/32 ,  H01L24/03 ,  H01L24/29 ,  H01L24/32 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/0382 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05555 ,  H01L2224/05578 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05673 ,  H01L2224/05684 ,  H01L2224/16012 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8501 ,  H01L2224/85375 ,  H01L2224/97 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/013 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

Abstract: A manufacturing method of a BGA, includes the steps of: providing a semiconductor chip having electrode pads; and removing a natural oxide film formed on the surface of each of the electrode pads. Further, a first film comprised of a conductive member is formed on the surface of the electrode pad exposed by removing the natural oxide film, a wire is connected with the first film, and part of the wire is brought into contact with the electrode pad to form an alloy layer at the interface between the wire and the electrode pad. The crystal structure of the first film is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. The cost of the semiconductor device can be reduced while the bonding reliability of wire bonding of the semiconductor device is ensured.

Abstract translation: 一种BGA的制造方法，包括以下步骤：提供具有电极焊盘的半导体芯片; 并除去形成在每个电极焊盘的表面上的自然氧化膜。 此外，在通过去除天然氧化物膜而暴露的电极焊盘的表面上形成由导电部件构成的第一膜，电线与第一膜连接，并且电线的一部分与电极焊盘接触， 在导线和电极焊盘之间的界面处形成合金层。 第一膜的晶体结构由体心立方晶格或六方密堆积晶格组成。 可以降低半导体器件的成本，同时确保半导体器件的引线接合的接合可靠性。