公开(公告)号：US20170040356A1

公开(公告)日：2017-02-09

申请号：US15297211

申请日：2016-10-19

Applicant: Renesas Electronics Corporation

Inventor： Koji IIZUKA

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/1462 ,  H01L23/564 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687

Abstract: There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.

Abstract translation: 提供了能够抑制裂纹发生以及确保平坦度的高度可靠的半导体器件及其制造方法。 半导体器件包括：半导体衬底; 元素区域 和非元素区域。 非元件区域包括：形成在非元件区域中的金属布线顶层中的顶层金属布线; 覆盖上层金属布线的上表面的平坦化膜; 以及在平坦化膜上形成的保护膜。 去除保护膜的去除部分形成在非元件区域的至少一部分中。

公开(公告)号：US20190273108A1

公开(公告)日：2019-09-05

申请号：US16278941

申请日：2019-02-19

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hidenori SATO ,  Koji IIZUKA ,  Takeshi KAMINO

IPC: H01L27/146 ,  H01L23/00

Abstract: A hybrid-bonding-type solid-state imaging device is provided that prevents moisture from entering through the bonded interface and other areas. The solid-state imaging device includes a first interconnect structure over a sensor substrate and a second interconnect structure over a logic substrate, and the first and second interconnect structures are bonded together. At the bonded surface between the first and second interconnect structures, bonding pads formed in the first interconnect structure are bonded to bonding pads formed in the second interconnect structure. Eighth layer portions of a first seal ring formed in the first interconnect structure are bonded to eighth layer portions of a second seal ring formed in the second interconnect structure.

公开(公告)号：US20170365631A1

公开(公告)日：2017-12-21

申请号：US15624357

申请日：2017-06-15

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Koji IIZUKA ,  Hidenori SATO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14689

Abstract: To provide a solid state image sensor having improved sensitivity and at the same time, causing less dark current, noise, and the like. In a solid state image sensor having a substrate comprised of an N type semiconductor substrate and a P type epitaxial layer thereon, formed are a trench penetrating the epitaxial layer in an isolation region between a pixel region having therein array of pixels and a peripheral circuit region around the pixel region; and a DTI structure comprised of an insulating film with which the trench is filled. Transfer of electrons in the substrate between the pixel region and the peripheral circuit region is thereby prevented.

公开(公告)号：US20170287965A1

公开(公告)日：2017-10-05

申请号：US15462963

申请日：2017-03-20

Applicant: Renesas Electronics Corporation

Inventor： Koji IIZUKA ,  Fumitoshi TAKAHASHI

IPC: H01L27/146 ,  H01L21/768 ,  H01L21/762

CPC classification number: H01L27/14636 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76898 ,  H01L24/05 ,  H01L24/48 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L2224/04042 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/04941 ,  H01L2924/01074 ,  H01L2924/049

Abstract: The semiconductor device includes a semiconductor substrate having a main surface and a back surface, an device isolation film, formed over the main surface of the semiconductor substrate and having a first surface making contact with the main surface and a second surface opposed to the first surface, a plate electrode disposed over the device isolation film in contact with the second surface of the device isolation film, and a pad electrode disposed adjacent to the first surface of the device isolation film and making contact with the plate electrode.The semiconductor substrate has a first opening that passes therethrough from the back surface to the main surface and exposes the device isolation film. The device isolation film has a second opening located in the first opening and exposes a part of the plate electrode. The pad electrode is formed in the second opening and extends over the first surface of the device isolation film.

公开(公告)号：US20170040360A1

公开(公告)日：2017-02-09

申请号：US15200803

申请日：2016-07-01

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Koji IIZUKA ,  Takahiro TOMIMATSU

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/14698

Abstract: An imaging device is provided, in which the dynamic range of still pictures can be suppressed from being decreased. In the imaging device, a photodiode including an n-type impurity region and a photodiode including an n-type impurity region are formed in a p-type well. An n-type impurity region is formed between the n-type impurity region on one side and that on the other side so as to contact each of the two. The impurity concentration of the last-formed n-type impurity region is set to be lower than those of the first-formed n-type impurity regions.

Abstract translation: 提供一种成像装置，其中可以抑制静止图像的动态范围的减小。 在成像装置中，在p型阱中形成包括n型杂质区域的光电二极管和包含n型杂质区域的光电二极管。 在一侧的n型杂质区域和另一侧的n型杂质区域之间形成n型杂质区域，以接触两者之中的每一个。 最后形成的n型杂质区域的杂质浓度设定为低于第一形成的n型杂质区域的杂质浓度。

公开(公告)号：US20140151838A1

公开(公告)日：2014-06-05

申请号：US14082303

申请日：2013-11-18

Applicant: Renesas Electronics Corporation

Inventor： Koji IIZUKA

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L23/564 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687

Abstract: There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.

Abstract translation: 提供了能够抑制裂纹发生以及确保平坦度的高度可靠的半导体器件及其制造方法。 半导体器件包括：半导体衬底; 元素区域 和非元素区域。 非元件区域包括：形成在非元件区域中的金属布线顶层中的顶层金属布线; 覆盖上层金属布线的上表面的平坦化膜; 以及在平坦化膜上形成的保护膜。 去除保护膜的去除部分形成在非元件区域的至少一部分中。