公开(公告)号：US20140329476A1

公开(公告)日：2014-11-06

申请号：US14258246

申请日：2014-04-22

Applicant: Renesas Electronics Corporation ,  Renesas Electronics Corporation

Inventor： Shintaro YAMAMICHI ,  Hirokazu HONDA ,  Masaki WATANABE ,  Junichi ARITA ,  Norio OKADA ,  Jun UENO ,  Masashi NISHIMOTO ,  Michitaka KIMURA ,  Tomohiro NISHIYAMA

IPC: H04B1/38 ,  H04B1/40 ,  H04W84/18

CPC classification number: H04W84/18 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A compact electronic device as a constituent element of a wireless communication system using a sensor. A first feature of the device is that a first semiconductor chip is bare-chip-mounted over a front surface of a first wiring board in the form of a chip and a second semiconductor chip is bare-chip-mounted over a second wiring board in the form of a chip. A second feature is that a wireless communication unit and a data processing unit which configure a module are separately mounted. A third feature is that the first and second wiring boards are stacked in the board thickness direction to make up the module (electronic device).

Abstract translation: 作为使用传感器的无线通信系统的组成要素的小型电子设备。 该器件的第一个特征是第一半导体芯片以芯片的形式裸地安装在第一布线板的前表面上，并且第二半导体芯片裸地安装在第二布线板上 芯片的形式。 第二特征是分别安装配置模块的无线通信单元和数据处理单元。 第三特征是第一和第二布线板沿板厚度方向堆叠以组成模块（电子设备）。

公开(公告)号：US20140327064A1

公开(公告)日：2014-11-06

申请号：US14332687

申请日：2014-07-16

Applicant: Renesas Electronics Corporation

Inventor： Toshihiro IIZUKA ,  Tomoe YAMAMOTO ,  Mami TODA ,  Shintaro YAMAMICHI

IPC: H01L27/108

CPC classification number: H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

Abstract: In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0

Abstract translation: 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2，（Zr x，Hf 1-x）O 2（0

公开(公告)号：US20150171066A1

公开(公告)日：2015-06-18

申请号：US14574662

申请日：2014-12-18

Applicant: Renesas Electronics Corporation

Inventor： Shintaro YAMAMICHI ,  Atsushi NAKAMURA ,  Masayuki ITO ,  Naoto TAOKA ,  Kentaro MORI

IPC: H01L25/18 ,  H01L27/02 ,  H01L23/31 ,  H01L23/34 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L25/18 ,  H01L23/145 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49894 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/97 ,  H01L27/0207 ,  H01L29/4916 ,  H01L29/517 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/48091 ,  H01L2924/00012 ,  H01L2924/00011

Abstract: This invention is to improve performance of a semiconductor integrated circuit device. A semiconductor device has a peripheral circuit chip and a logic chip mounted over a wiring substrate. The wiring substrate and the peripheral circuit chip are electrically connected, and the peripheral circuit chip and the logic chip are electrically connected. The peripheral circuit chip includes a first peripheral circuit, a power supply controller, a temperature sensor and a first RAM. The logic chip includes a CPU, a second peripheral circuit and a second RAM. The first peripheral circuit and the first RAM are manufactured based on a first process rule. The CPU, the second peripheral circuit and the second RAM are manufactured based on a second process rule finer than the first process rule.

Abstract translation: 本发明是为了提高半导体集成电路器件的性能。 半导体器件具有安装在布线基板上的外围电路芯片和逻辑芯片。 布线基板和外围电路芯片电连接，并且外围电路芯片和逻辑芯片电连接。 外围电路芯片包括第一外围电路，电源控制器，温度传感器和第一RAM。 逻辑芯片包括CPU，第二外围电路和第二RAM。 第一外围电路和第一RAM基于第一处理规则制造。 基于比第一处理规则更精细的第二处理规则来制造CPU，第二外围电路和第二RAM。