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公开(公告)号：US09057951B2
公开(公告)日：2015-06-16
申请号：US12547808
申请日：2009-08-26
CPC分类号： G03F7/0392 , G03F7/0397 , G03F7/30
摘要： Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.
摘要翻译： 光致抗蚀剂组合物包括酚类聚合物与不含含醚和/或羧酸的部分的（甲基）丙烯酸酯基共聚物的共混物。 （甲基）丙烯酸酯共聚物包括选自丙烯酸烷基酯，取代的丙烯酸烷基酯，（甲基）丙烯酸烷基酯，取代的甲基丙烯酸烷基酯及其混合物的第一单体和选自以下的第二单体： 丙烯酸酯，（甲基）丙烯酸酯或其具有酸可裂解酯取代基的混合物; 和光致酸发生器。 还公开了用光致抗蚀剂组合物在衬底上产生光致抗蚀剂图像的方法。
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公开(公告)号：US20110053083A1
公开(公告)日：2011-03-03
申请号：US12547808
申请日：2009-08-26
CPC分类号： G03F7/0392 , G03F7/0397 , G03F7/30
摘要： Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.
摘要翻译： 光致抗蚀剂组合物包括酚类聚合物与不含含醚和/或羧酸的部分的（甲基）丙烯酸酯基共聚物的共混物。 （甲基）丙烯酸酯共聚物包括选自丙烯酸烷基酯，取代的丙烯酸烷基酯，（甲基）丙烯酸烷基酯，取代的甲基丙烯酸烷基酯及其混合物的第一单体和选自以下的第二单体： 丙烯酸酯，（甲基）丙烯酸酯或其具有酸可裂解酯取代基的混合物; 和光致酸发生器。 还公开了用光致抗蚀剂组合物在衬底上产生光致抗蚀剂图像的方法。
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公开(公告)号：US08802347B2
公开(公告)日：2014-08-12
申请号：US12613804
申请日：2009-11-06
申请人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
发明人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译： 涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。 还公开了在含有该图案的涂料组合物中形成图案的方法。
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公开(公告)号：US20110111345A1
公开(公告)日：2011-05-12
申请号：US12613804
申请日：2009-11-06
申请人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
发明人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译： 涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。 还公开了在含有该图案的涂料组合物中形成图案的方法。
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5.发明授权Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures 有权旋转抗反射涂层，用于集成可图案化介电材料和互连结构公开(公告)号：US07944055B2
公开(公告)日：2011-05-17
申请号：US12772451
申请日：2010-05-03
申请人： Robert D. Allen , Phillip J. Brock , Blake W. Davis , Wu-Song S. Huang , Qinghuang Lin , Alshakim Nelson , Sampath Purushothaman , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Phillip J. Brock , Blake W. Davis , Wu-Song S. Huang , Qinghuang Lin , Alshakim Nelson , Sampath Purushothaman , Ratnam Sooriyakumaran
IPC分类号： H01L23/48
CPC分类号： H01L21/76808 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/0276 , H01L21/3122 , H01L21/76802 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , Y10T428/24802 , H01L2924/00
摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.
摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。
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6.发明申请SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES 有权用于整合电介质材料和互连结构的旋转抗反射涂层（SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES公开(公告)号：US20100207276A1
公开(公告)日：2010-08-19
申请号：US12772451
申请日：2010-05-03
申请人： Robert D. Allen , Phillip J. Brock , Blake W. Davis , Wu-Song S. Huang , Qinghuang Lin , Alshakim Nelson , Sampath Purushothaman , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Phillip J. Brock , Blake W. Davis , Wu-Song S. Huang , Qinghuang Lin , Alshakim Nelson , Sampath Purushothaman , Ratnam Sooriyakumaran
IPC分类号： H01L23/522 , C09D5/00
CPC分类号： H01L21/76808 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/0276 , H01L21/3122 , H01L21/76802 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , Y10T428/24802 , H01L2924/00
摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.
摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。
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7.发明申请SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES 有权用于整合电介质材料和互连结构的旋转抗反射涂层（SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES公开(公告)号：US20090081418A1
公开(公告)日：2009-03-26
申请号：US11858615
申请日：2007-09-20
申请人： Robert D. Allen , Phillip J. Brock , Blake W. Davis , Wu-Song S. Huang , Qinghuang Lin , Alshakim Nelson , Sampath Purushothaman , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Phillip J. Brock , Blake W. Davis , Wu-Song S. Huang , Qinghuang Lin , Alshakim Nelson , Sampath Purushothaman , Ratnam Sooriyakumaran
CPC分类号： H01L21/76808 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/0276 , H01L21/3122 , H01L21/76802 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , Y10T428/24802 , H01L2924/00
摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.
摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。
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8.发明授权Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures 有权旋转抗反射涂层，用于集成可图案化介电材料和互连结构公开(公告)号：US07709370B2
公开(公告)日：2010-05-04
申请号：US11858615
申请日：2007-09-20
申请人： Robert D. Allen , Phillip J. Brock , Blake W. Davis , Wu-Song S. Huang , Qinghuang Lin , Alshakim Nelson , Sampath Purushothaman , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Phillip J. Brock , Blake W. Davis , Wu-Song S. Huang , Qinghuang Lin , Alshakim Nelson , Sampath Purushothaman , Ratnam Sooriyakumaran
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/0276 , H01L21/3122 , H01L21/76802 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , Y10T428/24802 , H01L2924/00
摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.
摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。
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9.发明授权Photo acid generator compounds, photo resists, and method for improving bias 失效照片酸发生剂化合物，光致抗蚀剂和改善偏压的方法
公开(公告)号：US6074800A
公开(公告)日：2000-06-13
申请号：US64955
申请日：1998-04-23
申请人： Gregory Breyta , Phillip J. Brock , Daniel J. Dawson , Ronald A. DellaGuardia , Charlotte R. DeWan , Andrew R. Eckert , Hiroshi Ito , Premlatha Jagannathan , Leo L. Linehan , Kathleen H. Martinek , Wayne M. Moreau , Randolph J. Smith
发明人： Gregory Breyta , Phillip J. Brock , Daniel J. Dawson , Ronald A. DellaGuardia , Charlotte R. DeWan , Andrew R. Eckert , Hiroshi Ito , Premlatha Jagannathan , Leo L. Linehan , Kathleen H. Martinek , Wayne M. Moreau , Randolph J. Smith
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , Y10S430/115
摘要： Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.
摘要翻译： 提供了几个中等紫外光酸产生剂（PAG），化学放大光抗蚀剂（CAMP）和改进嵌套到隔离线偏压的方法。 类似地，也可以提高照相速度。 与传统的中等紫外线PAG不同，本发明的PAG化合物，抗蚀剂组合物和方法不需要中等紫外线敏化剂。 具体地说，提供了能够承受中等紫外线辐射，特别是I线的发色团的PAG，并且适合用于光速为500mJ / cm 2以下但优选为200mJ / cm 2的化学放大型光致抗蚀剂的PAG， cm2以下。 例如，PAG可以是锍或碘鎓盐，例如蒽基，丁基，甲基锍三氟甲磺酸酯和双（4-叔丁基苯基）碘9,10-二甲氧基蒽磺酸盐。 形成PAG的一部分的发色团可以选自多芳族烃，例如氯仿，芘，荧蒽，蒽，二苯甲酮，噻吨酮，蒽和菲，但优选为蒽。
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公开(公告)号：US4775608A
公开(公告)日：1988-10-04
申请号：US104476
申请日：1987-10-05
申请人： Thomas H. Baum , Phillip J. Brock , James Economy , Robert L. Jackson , Carl E. Larson , James R. Lyerla, Jr. , Christopher R. Moylan
发明人： Thomas H. Baum , Phillip J. Brock , James Economy , Robert L. Jackson , Carl E. Larson , James R. Lyerla, Jr. , Christopher R. Moylan
CPC分类号： G11B5/6005 , G11B5/596 , G11B5/82 , G11B5/84
摘要： A process for generating a capacitive servo pattern on a magnetic storage disk, comprising the steps of: (1) coating the disk with a solution of noble metal compound to form a film of the compound on the disk, (2) exposing said film to radiation through a mask to generate an image on the film, and (3) plating the disk on the areas exposed to radiation.
摘要翻译： 一种用于在磁存储盘上产生电容伺服图案的方法，包括以下步骤：（1）用贵金属化合物的溶液涂覆盘以在盘上形成化合物的膜，（2）将所述膜暴露于 通过掩模进行辐射以在膜上产生图像，和（3）在暴露于辐射的区域上电镀该盘。
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