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    Laser-induced chemical vapor deposition of thin-film conductors
    3.
    发明授权
    Laser-induced chemical vapor deposition of thin-film conductors 失效
    激光诱导化学气相沉积的薄膜导体

    公开(公告)号：US5246745A

    公开(公告)日：1993-09-21

    申请号：US812686

    申请日：1991-12-23

    申请人： Thomas H. Baum ,  Paul B. Comita ,  John R. Lankard Sr. ,  Thoams F. Redmond ,  Thomas A. Wassick ,  Robert L. Jackson

    发明人： Thomas H. Baum ,  Paul B. Comita ,  John R. Lankard Sr. ,  Thoams F. Redmond ,  Thomas A. Wassick ,  Robert L. Jackson

    IPC分类号： C23C16/04 ,  H01L21/48 ,  H01L21/768 ,  H05K3/22

    CPC分类号： H05K3/225 ,  C23C16/047 ,  H01L21/485 ,  H01L21/76894 ,  H05K2203/107 ,  H05K2203/1338 ,  H05K2203/173

    摘要： Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the debris generated during the ablation process. Flowing helium across the surface during the ablation process results in improved growth morphologies for the same laser writing conditions. A low power laser scan is used to induce metal deposition on the substrate without surface damage. This is followed by several scans at an intermediate laser power to deposit the desired thickness of metal (e.g., about 8 .mu.m). Lastly, a high power laser scan is used, either at the points of intersection between the existing metallurgy and the metal repair or across the entire deposit area. Thermal spreading or blooming is reduced by modulating the intensity of the laser source.

    摘要翻译： 在薄膜电路冶金的脉冲激光去除期间对局部环境的控制被用于改变顶表面的性质。 将这种激光处理的表面与LCVD膜相互连接导致不同的生长形态，这取决于所产生的表面的性质和消融过程中产生的碎屑。 在消融过程中，流过氦气的表面会导致相同激光写入条件下的生长形态的改善。 使用低功率激光扫描来诱导基板上的金属沉积而没有表面损伤。 随后在中间激光功率下进行多次扫描以沉积所需厚度的金属（例如，约8μm）。 最后，使用大功率激光扫描，无论是在现有冶金和金属修复之间或整个沉积区域的交点处。 通过调制激光源的强度来降低散热或开花。

    Cremation urn
    4.
    发明授权
    Cremation urn 失效
    火葬缸

    公开(公告)号：US5379499A

    公开(公告)日：1995-01-10

    申请号：US126253

    申请日：1993-09-22

    申请人： Robert L. Jackson

    发明人： Robert L. Jackson

    IPC分类号： A61G17/08

    CPC分类号： A61G17/08 ,  A61G17/007

    摘要： A cremation urn having a first container adapted for receiving the cremated remains of a deceased person, and a second, concealed container for storing memorabilia. The second container serves as the closure for the first, thus, the second container is substantially contained within the first container, inconspicuous but accessible to a user for the purpose of viewing objects contained therein. The second container is closed with a plug that may carry a vase for holding cut flowers, greenery and so forth. Preferably, the urn has identical openings at opposing ends, so that the first container may close either opening and the other opening can be closed by a plug.

    摘要翻译： 具有适于接收死者火葬遗体的第一容器的火化炉，以及用于存储纪念品的第二隐蔽容器。 第二容器用作第一容器的封闭件，因此第二容器基本上容纳在第一容器内，用于观察其中包含的物体的目的不容忽视，但可由用户访问。 第二个容器用塞子封闭，该插头可以携带用于保持切花，绿化等的花瓶。 优选地，所述瓮在相对端处具有相同的开口，使得所述第一容器可以关闭任一开口，并且所述另一个开口可以由塞子封闭。

    PULSED DEPOSITION PROCESS FOR TUNGSTEN NUCLEATION
    6.
    发明申请
    PULSED DEPOSITION PROCESS FOR TUNGSTEN NUCLEATION 失效
    脉冲沉积的脉冲沉积过程

    公开(公告)号：US20080317954A1

    公开(公告)日：2008-12-25

    申请号：US11621040

    申请日：2007-01-08

    申请人： XINLIANG LU ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

    发明人： XINLIANG LU ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

    IPC分类号： C23C16/08

    CPC分类号： H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

    摘要： In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.

    摘要翻译： 在一个实施例中，提供了一种用于在处理室内的衬底上沉积钨材料的方法，其包括将衬底暴露于含有钨前体和还原气体的气态混合物，以在钨沉积期间在衬底上沉积钨成核层 处理。 该方法还包括从处理室除去在钨沉积过程中产生的反应副产物，在浸泡过程期间将基底暴露于还原气体以与处理室内的残余钨前体反应，除去在该过程中产生的反应副产物 从处理室浸泡处理，并且在循环沉积工艺期间重复钨沉积工艺和浸泡工艺。 在实施例中，还原气体可以含有乙硼烷或硅烷。

    Process for electroplating metal into microscopic recessed features
    7.
    发明授权
    Process for electroplating metal into microscopic recessed features 有权
    将金属电镀成微观凹陷特征的工艺

    公开(公告)号：US06946065B1

    公开(公告)日：2005-09-20

    申请号：US09716016

    申请日：2000-11-16

    申请人： Steven T. Mayer ,  Vijay Bhaskaran ,  Evan E. Patton ,  Robert L. Jackson ,  Jonathan Reid

    发明人： Steven T. Mayer ,  Vijay Bhaskaran ,  Evan E. Patton ,  Robert L. Jackson ,  Jonathan Reid

    IPC分类号： C25D3/38 ,  C25D5/18 ,  H05K3/42 ,  H01L21/768

    CPC分类号： C25D3/02 ,  C25D3/38 ,  C25D5/022 ,  C25D5/18 ,  H01L21/2885 ,  H01L21/76877 ,  H05K3/423

    摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.

    摘要翻译： 描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。 阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。 还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。 还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。

    Wheeled plow shovel
    10.
    发明授权
    Wheeled plow shovel 失效
    轮式犁铲

    公开(公告)号：US5493797A

    公开(公告)日：1996-02-27

    申请号：US264900

    申请日：1994-06-24

    申请人： Robert L. Jackson

    发明人： Robert L. Jackson

    IPC分类号： E01H5/02 ,  E01H5/06

    CPC分类号： E01H5/02 ,  E01H5/066

    摘要： A wheeled plow shovel for plowing leaves or snow in a desired direction. The inventive device includes a main panel having a pair of wheels and a scraper blade extending downwardly therefrom. A handle is mounted to the main panel to permit manual manipulation of the device over a ground surface during a plowing procedure. In addition, a pair of slidably mounted wings can be extended laterally of the main body to increase a transverse width of the plowed area.

    摘要翻译： 用于在所需方向上耕作叶子或积雪的轮式犁铲。 本发明的装置包括具有一对轮的主面板和从其向下延伸的刮刀。 手柄安装到主面板，以允许在犁过程中手动操纵设备在地面上。 此外，一对可滑动安装的翼可以在主体的侧面延伸以增加耕作区域的横向宽度。