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    Film bulk acoustic-wave resonator and method for manufacturing the same
    1.
    发明授权
    Film bulk acoustic-wave resonator and method for manufacturing the same 失效
    薄膜体声波谐振器及其制造方法

    公开(公告)号：US07268647B2

    公开(公告)日：2007-09-11

    申请号：US11626270

    申请日：2007-01-23

    申请人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

    发明人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

    IPC分类号： H03H9/15 ,  H03H9/13 ,  H03H3/02 ,  H03H9/54

    CPC分类号： H03H3/02 ,  H03H9/173 ,  H03H9/174 ,  H03H9/605 ,  Y10T29/42

    摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

    摘要翻译： 一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在 空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于 压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线 在平面视图外的轮廓外。

    FILM BULK ACOUSTIC-WAVE RESONATOR AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    FILM BULK ACOUSTIC-WAVE RESONATOR AND METHOD FOR MANUFACTURING THE SAME 失效
    薄膜波纹声波谐振器及其制造方法

    公开(公告)号：US20070115078A1

    公开(公告)日：2007-05-24

    申请号：US11626270

    申请日：2007-01-23

    申请人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

    发明人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

    IPC分类号： H03H9/54

    CPC分类号： H03H3/02 ,  H03H9/173 ,  H03H9/174 ,  H03H9/605 ,  Y10T29/42

    摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

    摘要翻译： 一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在 空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于 压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线 在平面视图外的轮廓外。

    Film bulk acoustic-wave resonator and method for manufacturing the same
    3.
    发明授权
    Film bulk acoustic-wave resonator and method for manufacturing the same 失效
    薄膜体声波谐振器及其制造方法

    公开(公告)号：US07187253B2

    公开(公告)日：2007-03-06

    申请号：US11108671

    申请日：2005-04-19

    申请人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

    发明人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

    IPC分类号： H03H9/54 ,  H03H3/02

    CPC分类号： H03H3/02 ,  H03H9/173 ,  H03H9/174 ,  H03H9/605 ,  Y10T29/42

    摘要： A film bulk acoustic-wave resonator encompasses (a) a substrate having a cavity, (b) a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, (c) a piezoelectric layer disposed on the bottom electrode, a planar shape of the piezoelectric layer is defined by a contour, which covers an entire surface of the bottom electrode in a plan view, (d) a top electrode on the piezoelectric layer, (e) an intermediate electrode located between the substrate and the piezoelectric layer, and at the contour of the piezoelectric layer, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and (f) a bottom electrode wiring connected to the intermediate electrode extending from the contour to an outside of the contour in the plan view, wherein a longitudinal vibration mode along a thickness direction of the piezoelectric layer is utilized.

    摘要翻译： 薄膜体声波谐振器包括（a）具有空腔的基板，（b）部分地固定到基板的底部电极，底部电极的一部分机械地悬挂在空腔上方，（c）压电层， 底部电极，压电层的平面形状由在平面图中覆盖底部电极的整个表面的轮廓限定，（d）压电层上的顶部电极，（e）中间电极，位于 衬底和压电层，并且在压电层的轮廓处，中间电极在轮廓的内部连接到底部电极，（f）连接到从轮廓延伸到中间电极的底部电极配线 在平面图的轮廓外侧，利用沿着压电体层的厚度方向的纵向振动模式。

    Piezoelectric thin film resonator and devices provided with the same
    5.
    发明授权
    Piezoelectric thin film resonator and devices provided with the same 失效
    压电薄膜谐振器及其设备

    公开(公告)号：US07498904B2

    公开(公告)日：2009-03-03

    申请号：US11447999

    申请日：2006-06-07

    申请人： Ryoichi Ohara ,  Naoko Yanase ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo

    发明人： Ryoichi Ohara ,  Naoko Yanase ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo

    IPC分类号： H03H9/00

    CPC分类号： H03H9/02133 ,  H03H3/02 ,  H03H9/02157 ,  H03H9/13 ,  H03H9/174 ,  H03H2003/023

    摘要： A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.

    摘要翻译： 压电薄膜谐振器包括其中形成腔的衬底，具有第一电极边缘并且部分跨越衬底上的空腔的第一电极; 设置在第一电极上的压电层，具有第二电极边缘并放置在压电层上的第二电极，由第一电极，压电层，第二电极和空腔的重叠部分构成的谐振器单元; 以及与第二电极成一体的第二引线，延伸到不存在空腔的基板，并且具有大于第二电极边缘延伸的空腔的周长的一部分的宽度。 在压电薄膜谐振器中，由谐振器单元的第一电极的周边限定的第一长度大于由谐振器单元的第二电极边缘限定的第二长度。