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公开(公告)号:US20240118607A1
公开(公告)日:2024-04-11
申请号:US18183628
申请日:2023-03-14
Applicant: SEMES CO.,LTD.
Inventor: Hyun YOON , Ki Hoon CHOI , Seung Un OH , Young Ho PARK , Sang Hyeon RYU , Tae Hee KIM , Sang Gun LEE
CPC classification number: G03F1/80 , G03F1/82 , G03F7/168 , G03F7/202 , G03F7/3057 , G03F7/70733 , G03F7/70775
Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes pre-treating a substrate by cleaning the substrate; etching the substrate by supplying an etchant and heating a substrate supplied with the etchant; and post-treating the substrate after the etching the substrate, and wherein the pre-treating the substrate, the etching the substrate, and the post-treating the substrate are each performed in different chambers, a substrate on which the pre-treating the substrate is completed is transferred in a dry state to a chamber at which the etching the substrate is performed, and a substrate on which the etching the substrate is completed is transferred in a wetted state with a liquid to a chamber at which the post-treating the substrate is performed.
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公开(公告)号:US20240227075A9
公开(公告)日:2024-07-11
申请号:US18480393
申请日:2023-10-03
Applicant: SEMES CO., LTD.
Inventor: Tae Shin KIM , Ki Hoon CHOI , Tae Hee KIM , Sang Gun LEE , Jin Yeong SUNG , Jang Jin LEE
IPC: B23K26/12 , B23K26/08 , B23K26/362 , H01L21/768
CPC classification number: B23K26/128 , B23K26/0884 , B23K26/362 , H01L21/76894 , B23K2101/40
Abstract: Embodiments of the inventive concept provide a substrate treating apparatus and a substrate treating method for not letting an irradiation region of a laser deviate from a target region, even if a shaking angle of a chemical deviates from an allowable range due to a vibration or an airflow. The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes: a substrate support unit configured to support a substrate having a chemical coated thereon; a laser generation unit configured to irradiate a laser to the substrate; and a light-transmitter positioned along a path at which the laser is irradiated.
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公开(公告)号:US20250093768A1
公开(公告)日:2025-03-20
申请号:US18770090
申请日:2024-07-11
Applicant: SEMES CO., LTD. , SAMSUNG ELECTRONICS CO. LTD.
Inventor: Jin Yeong SUNG , Ki Hoon CHOI , Seung Un OH , Young Ho PARK , Sang Hyeon RYU , Jang Jin LEE , Hyun YOON , Sang Gun LEE , Yu Jin CHO , Ho Jong HWANG , Jong Ju PARK , Jong Keun OH , Yong Woo KIM
Abstract: A substrate processing apparatus is provided and includes: a support unit including a spin chuck and a centering jig that is on the spin chuck, the spin chuck configured to support and rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a swing arm including a correction unit that includes a sensor and an emitter, the swing arm configured to move such that the correction unit moves to a target point on the substrate, and the emitter configured to irradiate a beam towards the substrate; and a controller configured to: control the spin chuck and the swing arm; and determine whether a movement trajectory of the swing arm is aligned with a rotation center of the spin chuck based on information acquired by the sensor about the centering jig.
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公开(公告)号:US20240131624A1
公开(公告)日:2024-04-25
申请号:US18480393
申请日:2023-10-02
Applicant: SEMES CO., LTD.
Inventor: Tae Shin KIM , Ki Hoon CHOI , Tae Hee KIM , Sang Gun LEE , Jin Yeong SUNG , Jang Jin LEE
IPC: B23K26/12 , B23K26/08 , B23K26/362 , H01L21/768
CPC classification number: B23K26/128 , B23K26/0884 , B23K26/362 , H01L21/76894 , B23K2101/40
Abstract: Embodiments of the inventive concept provide a substrate treating apparatus and a substrate treating method for not letting an irradiation region of a laser deviate from a target region, even if a shaking angle of a chemical deviates from an allowable range due to a vibration or an airflow. The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes: a substrate support unit configured to support a substrate having a chemical coated thereon; a laser generation unit configured to irradiate a laser to the substrate; and a light-transmitter positioned along a path at which the laser is irradiated.
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公开(公告)号:US20240207906A1
公开(公告)日:2024-06-27
申请号:US18475488
申请日:2023-09-27
Applicant: SEMES CO., LTD.
Inventor: Sang Gun LEE , Young Joon HAN , Se Min KANG , Ju Ha WOO , In Ki JUNG , Jeong Hyup YU
IPC: B08B3/08
CPC classification number: B08B3/08 , H01L21/67023
Abstract: A substrate processing apparatus includes a support unit supporting a substrate, a rear nozzle unit installation unit including a sidewall surrounding the support unit and forming an internal space, a rear nozzle unit including a rear nozzle movably disposed outside of the sidewall to supply liquid toward a rear surface of the substrate and a rear nozzle driving unit connected to the rear nozzle through a partial sidewall portion of the sidewall in the internal space and driving the rear nozzle to move, and a liquid inflow preventing unit disposed on the partial sidewall portion of the sidewall and including an isolation space isolated from the internal space.
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公开(公告)号:US20240152056A1
公开(公告)日:2024-05-09
申请号:US18502628
申请日:2023-11-06
Applicant: SEMES CO., LTD.
Inventor: Sang Gun LEE , Ki Hoon CHOI , Hyun YOON , Seung Un OH , Jin Yeong SUNG , Jang Jin LEE , Tae Shin KIM
Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes supplying a liquid to a substrate; and heating the substrate after the supplying the liquid, and wherein the supplying the liquid includes: supplying a first liquid to the substrate; and supplying a second liquid which is different from the first liquid to a substrate to which the first liquid is supplied, and wherein the second liquid is supplied as a test to the substrate and a contact angle between the second liquid which is supplied and the substrate is measured to determine a degree of hydrophilization of the substrate, and a supply mechanism of the second liquid supplied to the substrate is determined based on the degree of hydrophilization of the substrate which is determined, before the supplying the second liquid is performed.
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