SUBSTRATE PROCESSING APPARATUS
    5.
    发明公开

    公开(公告)号:US20240207906A1

    公开(公告)日:2024-06-27

    申请号:US18475488

    申请日:2023-09-27

    CPC classification number: B08B3/08 H01L21/67023

    Abstract: A substrate processing apparatus includes a support unit supporting a substrate, a rear nozzle unit installation unit including a sidewall surrounding the support unit and forming an internal space, a rear nozzle unit including a rear nozzle movably disposed outside of the sidewall to supply liquid toward a rear surface of the substrate and a rear nozzle driving unit connected to the rear nozzle through a partial sidewall portion of the sidewall in the internal space and driving the rear nozzle to move, and a liquid inflow preventing unit disposed on the partial sidewall portion of the sidewall and including an isolation space isolated from the internal space.

    METHOD FOR TREATING A SUBSTRATE
    6.
    发明公开

    公开(公告)号:US20240152056A1

    公开(公告)日:2024-05-09

    申请号:US18502628

    申请日:2023-11-06

    CPC classification number: G03F7/423 G03F7/40

    Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes supplying a liquid to a substrate; and heating the substrate after the supplying the liquid, and wherein the supplying the liquid includes: supplying a first liquid to the substrate; and supplying a second liquid which is different from the first liquid to a substrate to which the first liquid is supplied, and wherein the second liquid is supplied as a test to the substrate and a contact angle between the second liquid which is supplied and the substrate is measured to determine a degree of hydrophilization of the substrate, and a supply mechanism of the second liquid supplied to the substrate is determined based on the degree of hydrophilization of the substrate which is determined, before the supplying the second liquid is performed.

Patent Agency Ranking