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公开(公告)号：US11961872B2
公开(公告)日：2024-04-16
申请号：US17242911
申请日：2021-04-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Namgoo Cha , Sang Min Kim , Jae Hee Lim
IPC: H01L27/15 , H01L25/075 , H01L27/02 , H01L33/62
CPC classification number: H01L27/156 , H01L25/0753 , H01L27/0255 , H01L33/62
Abstract: A unit pixel includes a transparent substrate, a plurality of light emitting devices disposed on the transparent substrate, and an electrostatic discharge (ESD) protector disposed on the transparent substrate and protecting at least one of the light emitting devices from electrostatic discharge.
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公开(公告)号：US12136610B2
公开(公告)日：2024-11-05
申请号：US17526306
申请日：2021-11-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Namgoo Cha , Sang Min Kim , Seongchan Park , Yeonkyu Park , Jae Hee Lim
Abstract: A unit pixel and a displaying apparatus including the unit pixel are provided. The unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, a light blocking layer disposed between the transparent substrate and the light emitting devices, and having at least one window, and a semi-transmissive layer disposed between at least one of the plurality of light emitting devices and the transparent substrate to overlap with the window at least partially.
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公开(公告)号：US10304998B2
公开(公告)日：2019-05-28
申请号：US14498910
申请日：2014-09-26
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Hoon Kim , Sang Min Kim , Chi Hyun In , Hong Suk Cho , Dae Seok Park
Abstract: A light emitting diode (LED) chip can include: a first pattern region having one or more curved parts; and a second pattern region at least partially surrounding the first pattern region. The first pattern region can include a first conductive type nitride-based semiconductor layer, an active layer, a second conductive type nitride-based semiconductor layer, a top electrode layer, and a top bump layer stacked over a substrate, the second pattern region can include a first conductive type nitride-based semiconductor layer, a bottom electrode layer, and a bottom bump layer stacked over the substrate, and the first pattern region can include one or more protrusion patterns formed in the one or more curved part.
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公开(公告)号：US20170263821A1
公开(公告)日：2017-09-14
申请号：US15329993
申请日：2015-07-30
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
CPC classification number: H01L33/46 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: The present invention relates to a light-emitting diode having enhanced liability. More particularly, a light-emitting diode has enhanced liability in a high-temperature and/or high humidity environment as well as in a room-temperature environment and can have decrease in light-emitting characteristics prevented. In addition, the present invention relates to a light-emitting diode comprising a structure which enables enhancing of light reflection and having enhanced light extraction efficiency by means of light reflection through the structure.
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5.发明申请公开(公告)号：US20150091042A1
公开(公告)日：2015-04-02
申请号：US14498910
申请日：2014-09-26
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Hoon Kim , Sang Min Kim , Chi Hyun In , Hong Suk Cho , Dae Seok Park
CPC classification number: H01L33/38 , H01L24/14 , H01L33/62 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: A light emitting diode (LED) chip can include: a first pattern region having one or more curved parts; and a second pattern region at least partially surrounding the first pattern region. The first pattern region can include a first conductive type nitride-based semiconductor layer, an active layer, a second conductive type nitride-based semiconductor layer, a top electrode layer, and a top bump layer stacked over a substrate, the second pattern region can include a first conductive type nitride-based semiconductor layer, a bottom electrode layer, and a bottom bump layer stacked over the substrate, and the first pattern region can include one or more protrusion patterns formed in the one or more curved part.
Abstract translation: 发光二极管（LED）芯片可以包括：具有一个或多个弯曲部分的第一图案区域; 以及至少部分地围绕所述第一图案区域的第二图案区域。 第一图案区域可以包括堆叠在衬底上的第一导电氮化物基半导体层，有源层，第二导电氮化物基半导体层，顶电极层和顶部隆起层，第二图案区域可以 包括层叠在基板上的第一导电型氮化物系半导体层，底部电极层和底部隆起层，第一图案区域可以包括形成在一个以上的弯曲部中的一个以上突起图案。
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Patent Agency Ranking
公开(公告)号：US12083489B2
公开(公告)日：2024-09-10
申请号：US17340929
申请日：2021-06-07
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Namgoo Cha , Sang Min Kim , Seongchan Park , Woogun Lee
CPC classification number: B01F35/716 , B01F31/60 , B01F31/70
Abstract: A light emitting device mixer includes at least two bowl feeders, each including a bowl capable of holding workpieces, and a driving unit capable of causing vibration to the bowl. The bowl feeders include a moving passage through which the workpieces may move from one bowl feeder to an adjacent bowl feeder.
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公开(公告)号：US11949055B2
公开(公告)日：2024-04-02
申请号：US17322129
申请日：2021-05-17
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Namgoo Cha , Sang Min Kim , Seongchan Park , Yeonkyu Park , Jae Hee Lim , Jinkyu Jang
CPC classification number: H01L33/62 , H01L25/0753 , H01L25/167 , H01L33/22 , H01L33/46 , H01L33/54 , H01L33/58
Abstract: A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, connection layers electrically connected to the light emitting devices, and bonding pads disposed over the connection layers and electrically connected to the connection layers. The bonding pads are partially overlapped with at least one of the light emitting devices in a vertical direction, respectively.
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公开(公告)号：US10177281B2
公开(公告)日：2019-01-08
申请号：US15722826
申请日：2017-10-02
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
Abstract: A light emitting diode includes a substrate, a lower semiconductor layer disposed on the substrate, a light emitting unit comprising a first upper semiconductor layer disposed in one region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the first upper semiconductor layer, a second current spreading portion comprising a third upper semiconductor layer disposed in another region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the third upper semiconductor layer, a first electrode disposed on the light emitting cell and electrically connected to the first upper semiconductor layer, and a second electrode separated from the light emitting cell and electrically connected to the lower semiconductor layer.
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公开(公告)号：US20180182925A1
公开(公告)日：2018-06-28
申请号：US15722826
申请日：2017-10-02
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
CPC classification number: H01L33/46 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: A light emitting diode includes a substrate, a lower semiconductor layer disposed on the substrate, a light emitting unit comprising a first upper semiconductor layer disposed in one region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the first upper semiconductor layer, a second current spreading portion comprising a third upper semiconductor layer disposed in another region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the third upper semiconductor layer, a first electrode disposed on the light emitting cell and electrically connected to the first upper semiconductor layer, and a second electrode separated from the light emitting cell and electrically connected to the lower semiconductor layer.
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公开(公告)号：US09812616B2
公开(公告)日：2017-11-07
申请号：US15329993
申请日：2015-07-30
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
CPC classification number: H01L33/46 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: The present invention relates to a light-emitting diode having enhanced liability. More particularly, a light-emitting diode has enhanced liability in a high-temperature and/or high humidity environment as well as in a room-temperature environment and can have decrease in light-emitting characteristics prevented. In addition, the present invention relates to a light-emitting diode comprising a structure which enables enhancing of light reflection and having enhanced light extraction efficiency by means of light reflection through the structure.
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