公开(公告)号：US20230418150A1

公开(公告)日：2023-12-28

申请号：US18340334

申请日：2023-06-23

Applicant: SK enpulse Co., Ltd.

Inventor： GeonGon LEE ,  Hyung-joo LEE ,  Suhyeon KIM ,  Sung Hoon SON ,  Seong Yoon KIM ,  Min Gyo JEONG ,  Taewan KIM ,  Inkyun SHIN ,  Tae Young KIM

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: A blank mask includes a light transmissive substrate, and a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen. An average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.

公开(公告)号：US20240345468A1

公开(公告)日：2024-10-17

申请号：US18750609

申请日：2024-06-21

Applicant: SK enpulse Co., Ltd.

Inventor： Hyung-joo LEE ,  Kyuhun KIM ,  JiYeon RYU ,  INKYUN SHIN ,  Seong Yoon KIM ,  Suk Young CHOI ,  Suhyeon KIM ,  SUNG HOON SON ,  Min Gyo JEONG

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 20 of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 20 of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1.





AI
⁢
1

=


XM
⁢
1


XQ
⁢
1






XM1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on upper surface of the phase shift film. XQ1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on the lower surface of the transparent substrate.

公开(公告)号：US20240192584A1

公开(公告)日：2024-06-13

申请号：US18080186

申请日：2022-12-13

Applicant: SK enpulse Co., Ltd.

Inventor： Hyung-joo LEE ,  Kyuhun KIM ,  GeonGon LEE ,  Seong Yoon KIM ,  Suk Young CHOI ,  Suhyeon KIM ,  Sung Hoon SON ,  Min Gyo JEONG ,  Inkyun SHIN

IPC: G03F1/50 ,  G02F1/00 ,  G02F1/1335 ,  G03F1/60 ,  G03F1/80 ,  H01L21/285

CPC classification number: G03F1/50 ,  G02F1/0063 ,  G02F1/133512 ,  G03F1/60 ,  G03F1/80 ,  H01L21/28568

Abstract: A blank mask includes a light-transmitting substrate; and a light-shielding film, disposed on the light-transmitting substrate, including a first light-shielding layer and a second light-shielding layer disposed on the first light-shielding layer. The second light-shielding layer includes at least one of a transition metal, oxygen, or nitrogen, or any combination thereof. A reflectance of a surface of the light-shielding film with respect to light having a wavelength of 193 nm is 20% or more and 40% or less. A hardness value of the second light-shielding layer is 0.3 kPa or more and 0.55 kPa or less.

公开(公告)号：US20250136842A1

公开(公告)日：2025-05-01

申请号：US18926638

申请日：2024-10-25

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Hyung-joo LEE ,  Yongsoo CHOI

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/321

Abstract: Disclosed is a polishing composition for a semiconductor process, including polishing particles, iron ions, and an iron ion stabilizer, in which the iron ion stabilizer comprises two or more carboxyl groups and the polishing composition has electrical conductivity of 200 μS/cm to 800 μS/cm. The polishing composition may polish a substrate surface including a tungsten pattern film having a fine pitch more smoothly.