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公开(公告)号：US11906416B2
公开(公告)日：2024-02-20
申请号：US17563644
申请日：2021-12-28
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Francesco Foncellino
CPC classification number: G01N15/0643 , B81B3/0005 , G01N1/2205 , G01N15/0618 , G01N15/1056 , B81B2201/0214 , B81B2203/019 , B81B2203/0127 , G01N2015/0046
Abstract: A MEMS sensing device for sensing microparticles in an environment external to the MEMS sensing device is provided. The MEMS sensing device comprises a semiconductor body integrating a sensor and a pump unit, the sensor including a sensor cavity, a membrane suspended over the sensor cavity, and a piezoelectric element over the membrane and configured to cause the membrane to oscillate, about an equilibrium position, at a corresponding resonance frequency when sensing electric signals are applied to the piezoelectric element during a first operative phase of the MEMS sensing device, the resonance frequency depending on an amount of microparticles located on the membrane, the membrane having a plurality of through holes for establishing a fluid communication between the sensor cavity and the environment; the pump is configured to cause air pressure in the sensor cavity to be reduced with respect to the air pressure of the environment during the first operative phase, so that microparticles are caused to adhere onto the membrane by a suction force through the plurality of through holes.
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2.发明申请INTEGRATED GAS SENSOR DEVICE, IN PARTICULAR FOR DETECTING CARBON MONOXIDE (CO) 有权集成气体传感器装置，特别是用于检测一氧化碳（CO）公开(公告)号：US20150001076A1
公开(公告)日：2015-01-01
申请号：US14318321
申请日：2014-06-27
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Fabrizio Porro , Valeria Casuscelli , Francesco Foncellino , Giovanna Salzillo , Luigi Giuseppe Occhipinti
CPC classification number: G01N27/26 , G01N27/4045 , G01N33/0027
Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.
Abstract translation: 描述了一种集成气体传感器装置，其包括在硅衬底上的硅衬底和氧化物层，以及在氧化物层上的工作电极，对电极和参考电极，工作电极和对电极具有相应的 活性区域通过工作电极和对电极的对应于氧化物层中的至少多个第一开口和多个第二开口暴露于环境空气，还包括电解质层部分和水凝胶层部分 电解质层部分，电解质和水凝胶层部分具有相同的尺寸，适合于至少覆盖工作电极，反作用电极和参比电极，水凝胶层部分用作“准固态”储水器。
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公开(公告)号：US20170322170A1
公开(公告)日：2017-11-09
申请号：US15658171
申请日：2017-07-24
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Fabrizio Porro , Valeria Casuscelli , Francesco Foncellino , Giovanna Salzillo , Luigi Giuseppe Occhipinti
IPC: G01N27/26 , G01N33/00 , G01N27/404
CPC classification number: G01N27/26 , G01N27/4045 , G01N33/0027
Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.
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4.发明授权Thin film transistors formed by organic semiconductors using a hybrid patterning regime 有权使用混合图案化方式由有机半导体形成的薄膜晶体管公开(公告)号：US09012259B2
公开(公告)日：2015-04-21
申请号：US14157097
申请日：2014-01-16
Applicant: STMicroelectronics S.r.l.
CPC classification number: H01L51/0545 , H01L51/0005 , H01L51/0023 , H01L51/0525
Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.
Abstract translation: 本公开描述了通过使用混合沉积/图案化方案在CMOS技术中形成底栅/底接触有机TFT的工艺策略。 为此，基于光刻工艺形成栅极电极，栅极电介质材料和漏极和源极电极，而通过使用空间选择性印刷工艺将有机半导体材料提供为最后层。
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Patent Agency Ranking
公开(公告)号：US11898989B2
公开(公告)日：2024-02-13
申请号：US17824586
申请日：2022-05-25
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Francesco Foncellino , Luigi Barretta
IPC: G01N29/00 , G01N29/02 , G01N29/036 , G01N29/22
CPC classification number: G01N29/022 , G01N29/036 , G01N29/222 , G01N2291/02408
Abstract: A MEMS device for detecting particulate and gases in the air, comprising: a first semiconductor body; a second semiconductor body with a first surface facing a first surface of the first semiconductor body; and a first spacer element and a second spacer element, which extend between the first surfaces of the semiconductor bodies so as to arrange them at a distance apart from one another and define a first duct. The MEMS device further comprises at least one of the following: a first particulate sensor comprising a first emitter unit for generating acoustic waves in the first duct, and a first particulate-detection unit for detecting the particulate, the first emitter unit and the first particulate-detection unit facing one another through the first duct; and a first gas sensor, which faces the first duct and is configured to detect said gases in the air present in the first duct.
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公开(公告)号：US09746439B2
公开(公告)日：2017-08-29
申请号：US14318321
申请日：2014-06-27
Applicant: STMicroelectronics S.r.l.
Inventor： Fabrizio Porro , Valeria Casuscelli , Francesco Foncellino , Giovanna Salzillo , Luigi Giuseppe Occhipinti
IPC: G01N27/00 , G01N27/26 , G01N27/404 , G01N33/00
CPC classification number: G01N27/26 , G01N27/4045 , G01N33/0027
Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.
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7.发明授权公开(公告)号：US10576500B2
公开(公告)日：2020-03-03
申请号：US15626824
申请日：2017-06-19
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Francesco Foncellino , Flavio Francesco Villa , Andrea Di Matteo
IPC: H01L41/09 , H01L41/29 , B06B1/06 , B06B1/02 , H01L41/113 , H01L41/293 , H01L41/332
Abstract: A piezoelectric micro-machined ultrasonic transducer (PMUT) comprising: a semiconductor body having a first cavity and a membrane, which is suspended over the first cavity and faces a front side of the semiconductor body; and a piezoelectric transducer assembly extending at least in part on the membrane, which may be actuated for generating a deflection of the membrane. A second cavity extends buried in a peripheral region of the membrane and delimits a central region of the membrane. Moreover, the peripheral portion has a stiffness lower than the stiffness of the central portion.
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公开(公告)号：US10429335B2
公开(公告)日：2019-10-01
申请号：US15658171
申请日：2017-07-24
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Fabrizio Porro , Valeria Casuscelli , Francesco Foncellino , Giovanna Salzillo , Luigi Giuseppe Occhipinti
Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.
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9.发明申请THIN FILM TRANSISTORS FORMED BY ORGANIC SEMICONDUCTORS USING A HYBRID PATTERNING REGIME 有权有机半导体使用混合布局方案形成的薄膜晶体管公开(公告)号：US20140199807A1
公开(公告)日：2014-07-17
申请号：US14157097
申请日：2014-01-16
Applicant: STMicroelectronics S.r.l.
IPC: H01L51/05
CPC classification number: H01L51/0545 , H01L51/0005 , H01L51/0023 , H01L51/0525
Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.
Abstract translation: 本公开描述了通过使用混合沉积/图案化方案在CMOS技术中形成底栅/底接触有机TFT的工艺策略。 为此，基于光刻工艺形成栅极电极，栅极电介质材料和漏极和源极电极，而通过使用空间选择性印刷工艺将有机半导体材料提供为最后层。
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