公开(公告)号：US11821886B2

公开(公告)日：2023-11-21

申请号：US16685618

申请日：2019-11-15

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: H01L29/872 ,  G01N33/20 ,  G01N27/414

CPC classification number: G01N33/20 ,  G01N27/414 ,  H01L29/872

Abstract: A system for detecting the concentration of metal particles of at least one first material, which includes a detector with: a semiconductor body including a cathode region, delimited by a front surface; and an anode structure made of metal material, which extends over a part of the cathode region, leaving part of the front surface exposed. The anode structure and the part of the cathode region form a first contact of a Schottky type. The exposed part of the front surface can access the metal particles.

公开(公告)号：US11189744B2

公开(公告)日：2021-11-30

申请号：US16508039

申请日：2019-07-10

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L31/07 ,  H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

公开(公告)号：US10062798B2

公开(公告)日：2018-08-28

申请号：US15479034

申请日：2017-04-04

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/101 ,  H01L31/108 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/11 ,  H01L31/18

CPC classification number: H01L31/1013 ,  H01L31/022416 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/108 ,  H01L31/11 ,  H01L31/1812

Abstract: A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

公开(公告)号：US20180188106A1

公开(公告)日：2018-07-05

申请号：US15900049

申请日：2018-02-20

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Paolo Badalà

IPC: G01J1/42 ,  H01L31/108 ,  H01L31/101 ,  H01L27/146

CPC classification number: G01J1/429 ,  H01L27/14621 ,  H01L27/14683 ,  H01L31/1013 ,  H01L31/108

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation includes a cathode region formed by a semiconductor material with a first type of conductivity. A first anode region and a second anode region are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor. The cathode region and the second anode region form a second sensor. In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.

公开(公告)号：US09952094B2

公开(公告)日：2018-04-24

申请号：US15375741

申请日：2016-12-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: G01J1/42 ,  H01L31/0224 ,  H01L31/107 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/18 ,  F23N5/08 ,  G01J5/00 ,  H01L31/103 ,  H01L31/09

CPC classification number: G01J1/429 ,  F23N5/082 ,  G01J5/0014 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14669 ,  H01L27/1467 ,  H01L31/02027 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/1035 ,  H01L31/107 ,  H01L31/1812

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

公开(公告)号：US20170018674A1

公开(公告)日：2017-01-19

申请号：US15052695

申请日：2016-02-24

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo

IPC: H01L31/108 ,  G01J5/22 ,  H01L31/18 ,  H01L27/144 ,  H01L31/028 ,  H01L31/0224

CPC classification number: H01L31/108 ,  G01J5/22 ,  G01K7/01 ,  H01L27/1443 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/1812 ,  H02S40/44

Abstract: A semiconductor device for a system for measuring temperature, which includes a first UV detector and a second UV detector. The first and second UV detectors generate a first current and a second current, respectively, as a function of the irradiance in the ultraviolet band. Moreover, the first and second UV detectors have coefficients of variation of the current with temperature, at constant irradiance, that are different from one another.

Abstract translation: 一种用于测量温度的系统的半导体器件，其包括第一UV检测器和第二UV检测器。 第一和第二UV检测器分别产生作为紫外线带的辐照度的函数的第一电流和第二电流。 此外，第一和第二UV检测器具有彼此不同的电流与温度的变化系数，恒定的辐照度。

公开(公告)号：US09236519B2

公开(公告)日：2016-01-12

申请号：US14788643

申请日：2015-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Delfo Nunziato Sanfilippo

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L31/107 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/022408 ,  H01L31/0352 ,  H01L31/18

Abstract: An embodiment of a geiger-mode avalanche photodiode includes: a body of semiconductor material, having a first surface and a second surface; a cathode region of a first type of conductivity, which extends within the body; and an anode region of a second type of conductivity, which extends within the cathode region and faces the first surface, the anode and cathode regions defining a junction. The anode region includes at least two subregions, which extend at a distance apart within the cathode region starting from the first surface, and delimit at least one gap housing a portion of the cathode region, the maximum width of the gap and the levels of doping of the two subregions and of the cathode region being such that, by biasing the junction at a breakdown voltage, a first depleted region occupies completely the portion of the cathode region within the gap.

公开(公告)号：US20150000402A1

公开(公告)日：2015-01-01

申请号：US14303522

申请日：2014-06-12

Applicant: STMicroelectronics S.r.l.

Inventor： Alfio Russo ,  Massimo Cataldo Mazzillo ,  Ferenc Nagy

IPC: G01C19/5712 ,  B81C1/00

CPC classification number: B81C1/0015 ,  B81C2203/075 ,  G01H3/06 ,  G01H9/00

Abstract: A MEMS sensor has at least a movable element designed to oscillate at an oscillation frequency, and an integrated measuring system coupled to the movable element to provide a measure of the oscillation frequency. The measuring system has a light source to emit a light beam towards the movable element and a light detector to receive the light beam reflected back from the movable element, including a semiconductor photodiode array. In particular, the light detector is an integrated photomultiplier having an array of single photon avalanche diodes.

Abstract translation: MEMS传感器至少具有设计成以振荡频率振荡的可移动元件，以及耦合到可移动元件的集成测量系统，以提供振荡频率的测量。 测量系统具有向可动元件发射光束的光源和用于接收从包括半导体光电二极管阵列的可移动元件反射回的光束的光检测器。 特别地，光检测器是具有单光子雪崩二极管阵列的集成光电倍增管。

公开(公告)号：US11961933B2

公开(公告)日：2024-04-16

申请号：US17534159

申请日：2021-11-23

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/1075 ,  H01L27/1443 ,  H01L31/0352 ,  H01L31/18

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

公开(公告)号：US11337617B2

公开(公告)日：2022-05-24

申请号：US16037328

申请日：2018-07-17

Applicant: STMicroelectronics S.r.l.

Inventor： Francesco Rundo ,  Piero Fallica ,  Sabrina Conoci ,  Salvatore Petralia ,  Massimo Cataldo Mazzillo

IPC: G06K9/00 ,  A61B5/00 ,  G16H10/60 ,  A61B5/349 ,  A61B5/024 ,  G16H50/00 ,  G06V40/10

Abstract: In an embodiment, PhotoPlethysmoGraphy (PPG) signals are processed by detecting peaks and valleys in the PPG signal, segmenting the PPG signal to provide a time series of PPG waveforms located between two subsequent valleys in the PPG signal, applying to the waveforms in the time series pattern recognition with respect to a reference PPG waveform pattern produced based on a mathematical model of the PPG signal by assigning to the waveforms in the time series a recognition score. A resulting PPG signal is produced by retaining the waveforms in the time series having an assigned recognition score reaching a recognition threshold, and discarding the waveforms in the time series having an assigned recognition score failing to reach the recognition threshold.