公开(公告)号：US11873215B2

公开(公告)日：2024-01-16

申请号：US17684317

申请日：2022-03-01

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Marco Del Sarto ,  Lorenzo Baldo

IPC: B81C1/00 ,  B81B3/00 ,  B81C99/00

CPC classification number: B81C1/00325 ,  B81B3/0018 ,  B81C99/0005 ,  B81C2201/112

Abstract: A MEMS device formed by a substrate, having a surface; a MEMS structure arranged on the surface; a first coating region having a first Young's modulus, surrounding the MEMS structure at the top and at the sides and in contact with the surface of the substrate; and a second coating region having a second Young's modulus, surrounding the first coating region at the top and at the sides and in contact with the surface of the substrate. The first Young's modulus is higher than the second Young's modulus.

公开(公告)号：US11810732B2

公开(公告)日：2023-11-07

申请号：US17690869

申请日：2022-03-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Enri Duqi ,  Gabriele Gattere ,  Carlo Valzasina

IPC: H01H13/14 ,  B81B3/00 ,  G01L1/16 ,  H01H13/06 ,  H10N30/30

CPC classification number: H01H13/14 ,  B81B3/0021 ,  G01L1/162 ,  H01H13/06 ,  H10N30/302 ,  B81B2201/018

Abstract: A button device includes a fixed support structure; a movable structure, laterally surrounded by the support structure and configured to deform at least in part under the action of an external force; and a fluid-tight protection cap. The movable structure includes a piston element, deformable elements having piezoelectric transducers arranged thereon, and anchor elements that couple the piston element to the deformable elements. When an external force acts on the piston element, the anchor elements transfer this force to the deformable elements and to the piezoelectric transducers, so as to sense the extent of this force.

公开(公告)号：US11560886B2

公开(公告)日：2023-01-24

申请号：US16847521

申请日：2020-04-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Domenico Giusti ,  Lorenzo Baldo ,  Enri Duqi

IPC: F04B43/04 ,  H01L27/20 ,  H01L41/047 ,  H01L41/09 ,  H01L41/31 ,  F04B43/02 ,  F04B45/047

Abstract: A micropump device is formed in a monolithic semiconductor body integrating a plurality of actuator elements arranged side-by-side. Each actuator element has a first chamber extending at a distance from a first face of the monolithic body; a membrane arranged between the first face and the first chamber; a piezoelectric element extending on the first face over the membrane; a second chamber, arranged between the first chamber and a second face of the monolithic body; a fluidic inlet path fluidically connecting the second chamber with the outside of the monolithic body; and a fluid outlet opening extending in a transverse direction in the monolithic body from the second face as far as the second chamber, through the first chamber. The monolithic formation of the actuator elements and the possibility of driving the actuator elements at different voltages enable precise adjustment of flows, from very low values to high values.

公开(公告)号：US11358862B2

公开(公告)日：2022-06-14

申请号：US16869159

申请日：2020-05-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Marco Del Sarto ,  Mikel Azpeitia Urquia

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H01L29/84

Abstract: A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.

公开(公告)号：US20190120710A1

公开(公告)日：2019-04-25

申请号：US16220498

申请日：2018-12-14

Applicant: STMicroelectronics S.R.L.

Inventor： Enri Duqi ,  Sebastiano Conti ,  Sonia Costantini

IPC: G01L9/00 ,  G01L9/06 ,  B81C1/00 ,  B81B7/00

Abstract: A pressure sensor designed to detect a value of ambient pressure of the environment external to the pressure sensor includes: a first substrate having a buried cavity and a membrane suspended over the buried cavity; a second substrate having a recess, hermetically coupled to the first substrate so that the recess defines a sealed cavity the internal pressure value of which provides a pressure-reference value; and a channel formed at least in part in the first substrate and configured to arrange the buried cavity in communication with the environment external to the pressure sensor. The membrane undergoes deflection as a function of a difference of pressure between the pressure-reference value in the sealed cavity and the ambient-pressure value in the buried cavity.

公开(公告)号：US09975756B2

公开(公告)日：2018-05-22

申请号：US15276613

申请日：2016-09-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Sebastiano Conti ,  Lorenzo Baldo ,  Flavio Francesco Villa

IPC: G01L9/00 ,  H01L21/00 ,  B81B7/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81B7/0038 ,  B81B3/0086 ,  B81B7/0019 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00269

Abstract: A micro-electro-mechanical pressure sensor device, formed by a cap region and by a sensor region of semiconductor material. An air gap extends between the sensor region and the cap region; a buried cavity extends underneath the air gap, in the sensor region, and delimits a membrane at the bottom. A through trench extends within the sensor region and laterally delimits a sensitive portion housing the membrane, a supporting portion, and a spring portion, the spring portion connecting the sensitive portion to the supporting portion. A channel extends within the spring portion and connects the buried cavity to a face of the second region. The first air gap is fluidically connected to the outside of the device, and the buried cavity is isolated from the outside via a sealing region arranged between the sensor region and the cap region.

公开(公告)号：US12050102B2

公开(公告)日：2024-07-30

申请号：US17025977

申请日：2020-09-18

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Gabriele Gattere ,  Carlo Valzasina ,  Enri Duqi

IPC: B81B7/00 ,  G01B7/16 ,  G01L1/14 ,  H01G5/01 ,  H01G5/16 ,  H01H1/00 ,  H03K17/975 ,  G06F3/044

CPC classification number: G01B7/22 ,  B81B7/0058 ,  G01L1/14 ,  H01G5/01 ,  H01G5/16 ,  H01H1/0036 ,  H03K17/975 ,  B81B2201/0221 ,  B81B2201/0292 ,  B81B2203/0154 ,  B81B2203/0181 ,  B81B2203/0307 ,  B81B2203/04 ,  B81B2203/056 ,  B81B2207/012 ,  G06F3/044

Abstract: A button device includes a MEMS sensor having a MEMS strain detection structure and a deformable substrate configured to undergo deformation under the action of an external force. The MEMS strain detection structure includes a mobile element carried by the deformable substrate via at least a first and a second anchorage, the latter fixed with respect to the deformable substrate and configured to displace and generate a deformation force on the mobile element in the presence of the external force; and stator elements capacitively coupled to the mobile element. The deformation of the mobile element causes a capacitance variation between the mobile element and the stator elements. Furthermore, the MEMS sensor is configured to generate detection signals correlated to the capacitance variation.

公开(公告)号：US11603311B2

公开(公告)日：2023-03-14

申请号：US17072813

申请日：2020-10-16

Applicant: STMicroelectronics S.r.l.

Inventor： Enri Duqi ,  Fabrizio Cerini ,  Lorenzo Baldo

IPC: B81B7/02 ,  A24F40/51 ,  B81B7/00

Abstract: A MEMS switch is actuatable by a fluid, and includes a piezoelectric pressure sensor that detects the movement of a fluid generating a negative pressure. The piezoelectric pressure sensor is formed by a chip of semiconductor material having a through cavity and a sensitive membrane, which extends over the through cavity and has a first and a second surface. The piezoelectric pressure sensor is mounted on a face of a board having a through hole so that the through cavity overlies and is in fluid connection with the through hole. The board has a fixing structure, which enables securing in an opening of a partition wall separating a first and a second space from each other. The board is arranged so that the first surface of the sensitive membrane faces the first space, and the second surface of the sensitive membrane faces the second space.

公开(公告)号：US11079298B2

公开(公告)日：2021-08-03

申请号：US16260723

申请日：2019-01-29

Applicant: STMicroelectronics S.r.l.

Inventor： Enri Duqi ,  Lorenzo Baldo

IPC: G01L9/00 ,  G01L19/14 ,  G01L19/00 ,  B81B7/00 ,  B81C1/00 ,  G01L19/12

Abstract: A MEMS pressure sensor includes a monolithic body of semiconductor material having a first face and a second face and housing a first buried cavity and a second buried cavity, arranged under the first buried cavity and projecting laterally therefrom. A first sensitive region is formed between the first buried cavity and the first face at a first depth, and a second sensitive region is formed between the second buried cavity and the first face at a second depth greater than the first depth. The monolithic body also houses a first piezoresistive sensing element and a second piezoresistive sensing element, integrated in the first and second sensitive regions, respectively.

公开(公告)号：US10961117B2

公开(公告)日：2021-03-30

申请号：US16431485

申请日：2019-06-04

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Flavio Francesco Villa ,  Gabriele Barlocchi

IPC: B81C1/00 ,  B81B7/02

Abstract: A process for manufacturing a microelectromechanical device envisages: providing a wafer of semiconductor material; forming a buried cavity, completely contained within the wafer, and a structural layer formed by a surface portion of the wafer and suspended over the buried cavity; forming first trenches through the structural layer as far as the buried cavity, which define the suspended structure in the structural layer; filling the first trenches and the buried cavity with sacrificial material; forming a closing structure above the structural layer; removing the sacrificial material from the first trenches and from the buried cavity to release the suspended structure, the suspended structure being isolated and buried within the wafer in a buried environment formed by the first trenches and by the buried cavity.