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    DISPLAY DEVICE
    1.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20210091163A1

    公开(公告)日：2021-03-25

    申请号：US16892988

    申请日：2020-06-04

    Applicant: Samsung Display Co., LTD.

    Inventor： Seung Sok SON ,  Woo Geun LEE ,  Seul Ki KIM ,  Kap Soo YOON ,  Hyun Woong BAEK ,  Jae Hyun LEE ,  Su Jung JUNG ,  Jung Kyoung CHO ,  Seung Ha CHOI ,  June Whan CHOI

    IPC: H01L27/32 ,  G09G3/32

    Abstract: A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明公开
    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20240355838A1

    公开(公告)日：2024-10-24

    申请号：US18538704

    申请日：2023-12-13

    Applicant: Samsung Display Co., LTD.

    Inventor： Hyeon Woo SHIN ,  June Whan CHOI

    IPC: H01L27/12 ,  G09G3/3233 ,  H10K59/121 ,  H10K59/131 ,  H10K71/30

    CPC classification number: H01L27/1251 ,  G09G3/3233 ,  H01L27/1222 ,  H10K59/1213 ,  H10K59/131 ,  H10K71/30 ,  G09G2300/0426

    Abstract: A display device includes a pixel including a first transistor, and a driving circuit including a second transistor. The first transistor includes a first active layer including first source and drain regions apart from each other with a first channel region therebetween, a first gate insulating layer on the first active layer and covering the first channel, source and drain regions, and a first gate electrode on the first gate insulating layer and overlapping the first channel region. The second transistor includes a second active layer including second source and drain regions apart from each other with a second channel region therebetween, a second gate insulating layer on a part of the second active layer including the second channel region and exposing the second source and drain regions, and a second gate electrode disposed on the second gate insulating layer and overlapping the second channel region.

    DISPLAY DEVICE
    4.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20210327868A1

    公开(公告)日：2021-10-21

    申请号：US17215682

    申请日：2021-03-29

    Applicant: Samsung Display Co., LTD.

    Inventor： Kang Moon JO ,  An Su LEE ,  June Whan CHOI

    IPC: H01L27/02

    Abstract: A display device includes a substrate including a display area and a non-display area; a semiconductor layer including a source area, a channel area, and a drain area and disposed in the non-display area of the substrate; a gate electrode overlapping the channel area of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the channel area of the semiconductor layer; a source electrode electrically connected to the source area of the semiconductor layer; and a drain electrode electrically connected to the drain area of the semiconductor layer, wherein a lateral side of the gate electrode overlaps the drain electrode.

    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号：US20150008437A1

    公开(公告)日：2015-01-08

    申请号：US14495835

    申请日：2014-09-24

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Yeon Taek JEONG ,  Bo Sung KIM ,  Doo-Hyoung LEE ,  June Whan CHOI ,  Tae-Young CHOI ,  Kano MASATAKA

    IPC: H01L29/423 ,  H01L29/51 ,  H01L29/49 ,  H01L29/786

    CPC classification number: H01L29/42384 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/512 ,  H01L29/786 ,  H01L2029/42388

    Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.

    Abstract translation: 提供薄膜晶体管。 根据本发明的示例性实施例的薄膜晶体管包括：基板; 栅极线，设置在所述基板上并且包括栅电极; 半导体层，设置在所述基板上，并且至少包括与所述栅电极重叠的部分; 设置在所述栅极线和所述半导体层之间的栅极绝缘层; 以及设置在所述基板上并且在所述半导体层的沟道区域上彼此面对的源电极和漏电极。 栅极绝缘层包括第一区域和第二区域，第一区域对应于半导体层的沟道区域，第一区域由第一材料制成，第二区域由第二材料制成，第一材料 并且第二材料具有不同的碳和硅原子数比。

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20160322507A1

    公开(公告)日：2016-11-03

    申请号：US15137476

    申请日：2016-04-25

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： June Whan CHOI ,  Jun Hyuck JEON ,  Seung-Kyeng CHO ,  Jang Soo KIM ,  Jae Woo PARK ,  Ki Seong SEO ,  Soo Woong LEE ,  Jeong Young LEE

    IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

    CPC classification number: H01L29/78606 ,  H01L21/28008 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/458 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A thin film transistor array panel, including a substrate; a gate electrode on the substrate; a semiconductor layer on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a first oxide insulating layer in contact with the semiconductor layer; a source electrode on the semiconductor layer; a drain electrode facing the source electrode; and a passivation layer covering the source electrode and the drain electrode, the passivation layer including a second oxide insulating layer in contact with the source electrode and the drain electrode, at least one of the first oxide insulating layer and the second oxide insulating layer having a varying hydrogen content distribution in a thickness direction.

    Abstract translation: 一种薄膜晶体管阵列面板，包括基板; 基板上的栅电极; 衬底上的半导体层; 在所述栅极电极和所述半导体层之间的栅极绝缘层，所述栅极绝缘层包括与所述半导体层接触的第一氧化物绝缘层; 半导体层上的源电极; 面向源电极的漏电极; 以及覆盖所述源电极和所述漏电极的钝化层，所述钝化层包括与所述源电极和所述漏电极接触的第二氧化物绝缘层，所述第一氧化物绝缘层和所述第二氧化物绝缘层中的至少一个具有 在厚度方向上变化的氢含量分布。

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