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    Selectorless 3D stackable memory
    1.
    发明授权
    Selectorless 3D stackable memory 有权

    公开(公告)号：US10585630B2

    公开(公告)日：2020-03-10

    申请号：US15845985

    申请日：2017-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Titash Rakshit ,  Borna J. Obradovic ,  Ryan M. Hatcher ,  Vladimir Nikitin ,  Dmytro Apalkov

    IPC: H01L21/822 ,  H01L27/22 ,  G06F3/06 ,  H01L27/11578 ,  H01L21/3105 ,  G11C11/16 ,  G11C11/18 ,  H01L43/08

    Abstract: A memory device and method for providing the memory device are described. The memory device includes word lines, a first plurality of bit lines, a second plurality of bit lines and selectorless memory cells. Each selectorless memory cell is coupled with a word line, a first bit line of the first plurality of bit lines and a second bit line of the second plurality of bit lines. The selectorless memory cell includes first and second magnetic junctions. The first and second magnetic junctions are each programmable using a spin-orbit interaction torque. The word line is coupled between the first and second magnetic junctions. The first and second bit lines are coupled with the first and second magnetic junctions, respectively. The selectorless memory cell is selected for a write operation based on voltages in the word line, the first bit line and the second bit line.

    METHOD AND SYSTEM FOR ENGINEERING THE SECONDARY BARRIER LAYER IN DUAL MAGNETIC JUNCTIONS
    2.
    发明申请
    METHOD AND SYSTEM FOR ENGINEERING THE SECONDARY BARRIER LAYER IN DUAL MAGNETIC JUNCTIONS 审中-公开

    公开(公告)号：US20190319182A1

    公开(公告)日：2019-10-17

    申请号：US16453854

    申请日：2019-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Zheng Duan ,  Dmytro Apalkov ,  Vladimir Nikitin

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

    Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.

    Self-assembled pattern process for fabricating magnetic junctions usable in spin transfer torque applications
    3.
    发明授权
    Self-assembled pattern process for fabricating magnetic junctions usable in spin transfer torque applications 有权

    公开(公告)号：US10170518B2

    公开(公告)日：2019-01-01

    申请号：US15659613

    申请日：2017-07-25

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Vladimir Nikitin ,  Dmytro Apalkov ,  Sebastian Schafer

    IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

    Abstract: Magnetic junctions usable in a magnetic device and a method for providing the magnetic junctions are described. A patterned seed layer is provided. The patterned seed layer includes magnetic seed islands interspersed with an insulating matrix. At least a portion of the magnetoresistive stack is provided after the patterned seed layer. The magnetoresistive stack includes at least one magnetic segregating layer. The magnetic segregating layer(s) include at least one magnetic material and at least one insulator. The method anneals the at least the portion of the magnetoresistive stack such that the at least one magnetic segregating layer segregates. The constituents of the magnetic segregating layer segregate such that portions of magnetic material(s) align with the magnetic seed islands(s) and such that portions of the insulator(s) align with the insulating matrix.

    Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices
    6.
    发明授权
    Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices 有权
    用于提供可使用自旋累积切换并且可使用磁电装置选择的磁存储器的方法和系统

    公开(公告)号：US09076954B2

    公开(公告)日：2015-07-07

    申请号：US14097492

    申请日：2013-12-05

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC: G11C11/00 ,  H01L43/02

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/224 ,  H01L43/08

    Abstract: A magnetic memory is described. In one aspect, the magnetic memory includes magnetic junctions and at least one semi-spin valve (SSV) line adjacent to the magnetic junctions. Each magnetic junction includes a magnetic free layer. The SSV line(s) include a ferromagnetic layer and a nonmagnetic layer between the ferromagnetic layer and the magnetic junctions. The SSV line(s) are configured to exert a spin accumulation induced torque on at least a portion of the magnetic junctions due to an accumulation of spin polarized current carriers from a current that is substantially in-plane. The free layer is configured to be written using at least the spin accumulation induced torque. In another aspect, the magnetic memory includes magnetic memory cells and at least one spin torque (ST) line that is analogous to the SSV line. Each magnetic memory cell includes magnetic junction(s) analogous to those above and magnetoelectric selection device(s).

    Abstract translation: 描述磁存储器。 在一个方面，磁存储器包括磁结和至少一个与磁结相邻的半自旋阀（SSV）线。 每个磁结都包括无磁层。 SSV线包括在铁磁层和磁结之间的铁磁层和非磁性层。 SSV线被配置为由于自旋极化电流载流子从基本上在平面内的电流的积累而在至少一部分磁结上施加自旋累积诱导转矩。 自由层被配置为使用至少自旋累积诱导扭矩来写入。 在另一方面，磁存储器包括磁存储器单元和类似于SSV线的至少一个自旋转矩（ST）线。 每个磁存储单元包括与上述类似的磁结和磁电选择装置。

    Method and apparatus for performing self-referenced read in a magnetoresistive random access memory
    8.
    发明授权
    Method and apparatus for performing self-referenced read in a magnetoresistive random access memory 有权

    公开(公告)号：US10573363B2

    公开(公告)日：2020-02-25

    申请号：US15087939

    申请日：2016-03-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Alexey Vasilyevich Khvalkovskiy ,  Vladimir Nikitin ,  Dmytro Apalkov

    IPC: G11C11/16

    Abstract: A method of reading information stored in a magnetic memory. In a magnetic memory comprising a magnetic tunnel junction including a first reference layer and a free layer, and a spin orbit active (SO) line adjacent to the first reference layer of the magnetic tunnel junction, first and second currents are passed through the SO line so as to achieve two different directions of a magnetic moment of the first reference layer. Two electrical characteristics of the magnetic tunnel junction are determined, the two electrical characteristics corresponding to the two different directions of the magnetic moment of the first reference layer. These two electrical characteristics are then compared to determine the value of the stored information.

    VERTICAL SPIN ORBIT TORQUE DEVICES
    9.
    发明申请
    VERTICAL SPIN ORBIT TORQUE DEVICES 审中-公开

    公开(公告)号：US20190273202A1

    公开(公告)日：2019-09-05

    申请号：US15968514

    申请日：2018-05-01

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Vladimir Nikitin ,  Dmytro Apalkov

    IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/12

    Abstract: A magnetic device and method for programming the magnetic device are described. The magnetic device includes a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer having a plurality of sides. The SO active layer(s) carry a current in direction(s) substantially perpendicular to the plurality of sides. Each of the magnetic junction(s) is adjacent to the sides and substantially surrounds a portion of the SO active layer. Each magnetic junction includes a free layer, a reference layer and a nonmagnetic spacer layer between the pinned and free layers. The SO active layer(s) exert a SO torque on the free layer due to the current passing through the SO active layer(s). The free layer is switchable between stable magnetic states. The free layer may be written using the current and, in some aspects, another current driven through the magnetic junction.

    SELECTORLESS, 3D STACKABLE CROSSPOINT MEMORY
    10.
    发明申请
    SELECTORLESS, 3D STACKABLE CROSSPOINT MEMORY 审中-公开

    公开(公告)号：US20190079701A1

    公开(公告)日：2019-03-14

    申请号：US15845985

    申请日：2017-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Titash Rakshit ,  Borna J. Obradovic ,  Ryan M. Hatcher ,  Vladimir Nikitin ,  Dmytro Apalkov

    IPC: G06F3/06 ,  H01L21/3105 ,  H01L21/822 ,  H01L27/11578

    Abstract: A memory device and method for providing the memory device are described. The memory device includes word lines, a first plurality of bit lines, a second plurality of bit lines and selectorless memory cells. Each selectorless memory cell is coupled with a word line, a first bit line of the first plurality of bit lines and a second bit line of the second plurality of bit lines. The selectorless memory cell includes first and second magnetic junctions. The first and second magnetic junctions are each programmable using a spin-orbit interaction torque. The word line is coupled between the first and second magnetic junctions. The first and second bit lines are coupled with the first and second magnetic junctions, respectively. The selectorless memory cell is selected for a write operation based on voltages in the word line, the first bit line and the second bit line.

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