SEMICONDUCTOR DEVICE
    6.
    发明公开

    公开(公告)号:US20230223454A1

    公开(公告)日:2023-07-13

    申请号:US17898028

    申请日:2022-08-29

    Abstract: A semiconductor device may include a substrate including a first cell region, a second cell region, and a dummy region between the first and second cell regions, and conductive patterns included in the first cell region, the second cell region, and the dummy region. A first pattern density, which is defined as a density of the conductive patterns of the first cell region, may be different from a second pattern density, which is defined as a density of the conductive patterns of the second cell region. A third pattern density, which is defined as a density of the conductive patterns of the dummy region, gradually changes in a region between the first cell region and the second cell region. A top surface of the substrate may be inclined at an angle, in the dummy region.

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