SUBSTRATE POLISHING APPARATUS
    3.
    发明公开

    公开(公告)号:US20240165769A1

    公开(公告)日:2024-05-23

    申请号:US18196178

    申请日:2023-05-11

    CPC classification number: B24B57/02 B24B37/04

    Abstract: A substrate polishing apparatus includes; a platen including an upper surface configured to perform a polishing process on a semiconductor substrate, a slurry supply configured to supply slurry to the upper surface of the platen, wherein the slurry includes aqueous solution and abrasive particles, a collection pipe disposed under the platen and configured to guide the slurry, wherein the collection pipe includes a vertical guide pipe and a lateral guide pipe, a collection device disposed on an outer surface of the collection pipe, wherein the collection device includes an alternating arrangement of magnetic separators configured to separate the abrasive particles from the slurry using an electromagnetic force and sonicators configured to decompose the abrasive particles, and a collection tank connected to the collection pipe and configured to store the abrasive particles separated from the slurry by the collection device.

    CHEMICAL MECHANICAL POLISHING (CMP) APPARATUS

    公开(公告)号:US20240157502A1

    公开(公告)日:2024-05-16

    申请号:US18144711

    申请日:2023-05-08

    Inventor: DONGHOON KWON

    CPC classification number: B24B37/005 B24B37/205

    Abstract: This disclosure relates to a chemical mechanical polishing apparatus, and may include: a polishing platen including an opening; a polishing pad positioned on the polishing platen and including a transmissive part overlapping the opening; a slurry supply supplying a slurry including a photocatalyst to the polishing pad; a head part positioned on the polishing pad and capable of mounting a wafer; and a light irradiation part positioned within the opening of the polishing platen.

    BACK GRINDING APPARATUS AND WEAR AMOUNT MEASURING METHOD USING THE SAME

    公开(公告)号:US20240424637A1

    公开(公告)日:2024-12-26

    申请号:US18412053

    申请日:2024-01-12

    Abstract: A back grinding apparatus includes a grinding wheel that is rotatable and movable in a vertical direction and including at least one abrasive, and a grinding gauge below the grinding wheel and configured to measure a wear amount of the at least one abrasive, where the grinding gauge includes a measuring body and a photoelectric sensor supported by the measuring body and configured to determine the wear amount of the at least one abrasive, and where the photoelectric sensor includes at least one light emitter, and at least one light receiver spaced apart from the at least one light emitter in a horizontal direction and configured to receive light emitted from the at least one light emitter.

    SUBSTRATE POLISHING DEVICE, SUBSTRATE PROCESSING SYSTEM AND POLISHING METHOD USING THE SAME

    公开(公告)号:US20250065469A1

    公开(公告)日:2025-02-27

    申请号:US18434492

    申请日:2024-02-06

    Inventor: DONGHOON KWON

    Abstract: A substrate polishing device according to an embodiment includes a first polishing module disposed in a first region and including a plurality of first polishing units having first polishing pads, a second polishing module disposed in a second region and including at least one second polishing unit having a second polishing pad, and a transfer module configured to transfer a substrate between the first polishing module and the second polishing module. The second region is disposed adjacent to or within the first region, and a diameter of the second polishing pad is smaller than a diameter of the first polishing pad.

    WAFER CLEANING APPARATUS
    9.
    发明申请

    公开(公告)号:US20250040693A1

    公开(公告)日:2025-02-06

    申请号:US18438750

    申请日:2024-02-12

    Abstract: A wafer cleaning apparatus includes a wafer roller rotating a wafer around a first direction parallel to a normal direction of a first surface of the wafer, a first brush facing the first surface of the wafer, a second brush facing a second surface of the wafer opposite to the first surface, a first cleaning tank disposed apart from the first brush and movable to accommodate at least a portion of the first brush, and a second cleaning tank disposed apart from the second brush and movable to accommodate at least a portion of the second brush. The first and second cleaning tanks include a first solution injection member connected to a first solution supply pipe and a second solution injection member connected to a second solution supply pipe, respectively. Each of the first and second solution injection members includes a bubble generating filter having a plurality of through-holes.

    CHEMICAL MECHANICAL POLISHING APPARATUS
    10.
    发明公开

    公开(公告)号:US20240173815A1

    公开(公告)日:2024-05-30

    申请号:US18201967

    申请日:2023-05-25

    Inventor: DONGHOON KWON

    CPC classification number: B24B37/24 B24B1/005

    Abstract: A chemical mechanical polishing apparatus includes a polishing platen that includes an electromagnet and is rotatable; a lower polishing pad that is positioned on the polishing platen, the lower polishing pad including a first area and a second area, the first area including a first magnetic material and the second area including a non-magnetic material, wherein the first area overlaps the electromagnet; an upper polishing pad that is positioned on the lower polishing pad, includes a second magnetic material, and overlaps the first area; and a polishing head configured to provide a wafer on the upper polishing pad and is rotatable.

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