公开(公告)号：US20240094633A1

公开(公告)日：2024-03-21

申请号：US18150012

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungha CHAE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Minsang KIM ,  Hana KIM ,  Hyeran KIM ,  Youngmin NAM ,  Changheon LEE ,  Kyuhyun IM

IPC: G03F7/004 ,  C07C65/30 ,  G03F7/20

CPC classification number: G03F7/0045 ,  C07C65/30 ,  G03F7/2006

Abstract: Provided are a carboxylate salt represented by Formula 1, a photoresist composition including the carboxylate salt represented by Formula 1, and a method of forming a pattern by using the photoresist composition






wherein, in Formula 1, A11, R11 to R15, b15, n11, n12, and M+ are described in the specification.

公开(公告)号：US20250102906A1

公开(公告)日：2025-03-27

申请号：US18420038

申请日：2024-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon JEON ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Changheon LEE ,  Kyuhyun IM ,  Jungha CHAE ,  Minyoung HA

IPC: G03F7/004 ,  C07F7/22

Abstract: Provided are an organometallic compound represented by one of Formulae 1-1 to 1-4, a resist composition including the same, and a pattern formation method using the resist composition: M11, Q11 to Q14, b11 to b14, R11 to R14, Y11 to Y13, and X11 to X14 in Formulae 1-1 to 1-4 are as described in the specification.

公开(公告)号：US20240319592A1

公开(公告)日：2024-09-26

申请号：US18491310

申请日：2023-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Kyuhyun IM ,  Jinwon JEON ,  Jungha CHAE ,  Sunghyun HAN

IPC: G03F7/004 ,  G03F7/038

CPC classification number: G03F7/0042 ,  G03F7/0048 ,  G03F7/0382

Abstract: Provided are a resist composition and a method of forming a pattern using the same, wherein the resist composition may include an organometallic compound represented by Formula 1 below, and a polymer including a repeating unit represented by Formula 2 below.




For a description of M11, R11, R12, n, A21, L21 to L23, A21 to a23, R21 to R22, b22, and p in Formula 1 and Formula 2, the specification is referred to.

公开(公告)号：US20240319594A1

公开(公告)日：2024-09-26

申请号：US18493192

申请日：2023-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanjae AHN ,  Cheol KANG ,  Minsang KIM ,  Beomseok KIM ,  Changki KIM ,  Hana KIM ,  Hyeran KIM ,  Changheon LEE ,  Sungwon CHOI ,  Hyunseok CHOI

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/18 ,  G03F7/038

CPC classification number: G03F7/039 ,  C08F212/24 ,  C08F212/28 ,  C08F220/1806 ,  C08F220/1807 ,  G03F7/038

Abstract: Provided are a resist composition and a pattern forming method using the same. The resist composition includes a polymer including a first repeating unit repeating unit Formula 1, a photoacid generator, and an organic solvent.




In Formula 1, L11 to L13, a11 to a13, A11 to A13, R11 to R14, b12 to b14, and p are the same as described in the detailed description.

公开(公告)号：US20240231225A1

公开(公告)日：2024-07-11

申请号：US18325465

申请日：2023-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Youngmin NAM ,  Chanjae AHN ,  Changheon LEE ,  Kyuhyun IM ,  Sungwon CHOI ,  Sunghyun HAN

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0044 ,  G03F7/2004 ,  G03F7/32

Abstract: Provided are a resist composition and a pattern forming method using the same. The resist composition may include an organometallic compound represented by Formula 1 below and a polymer repeating unit represented by Formula 2 below.




In Formulas 1 and 2, descriptions of M11, R11, R12, n, A21, L21 to L24, a21 to a24, R21, R22, b22, p, and X21 refer to the specification.

公开(公告)号：US20220351947A1

公开(公告)日：2022-11-03

申请号：US17548775

申请日：2021-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kuihyun YOON ,  Sang Ki NAM ,  Kwonsang SEO ,  Sungho JANG ,  Jungmin KO ,  Nam Kyun KIM ,  Tae-Hyun KIM ,  Seunghan BAEK ,  Seungbin AHN ,  Jungmo YANG ,  Changheon LEE ,  Kangmin JEON

IPC: H01J37/32

Abstract: A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.

公开(公告)号：US20240337928A1

公开(公告)日：2024-10-10

申请号：US18613810

申请日：2024-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hana KIM ,  Haengdeog KOH ,  Hyeran KIM ,  Youngmin NAM ,  Giyoung SONG ,  Changheon LEE ,  Aram JEON ,  Jungha CHAE ,  Songse YI ,  Sukkoo HONG

IPC: G03F7/004

CPC classification number: G03F7/0045

Abstract: Provided are an organic salt represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition.




A description of Formula 1 is provided herein.

公开(公告)号：US20240302268A1

公开(公告)日：2024-09-12

申请号：US18664157

申请日：2024-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghui CHOI ,  Keunbum LEE ,  Changwoo JUNG ,  Buyoun LEE ,  Changheon LEE ,  Sangki CHO

IPC: G01N21/29 ,  G01N21/21 ,  G01N21/85 ,  G01N33/00

CPC classification number: G01N21/29 ,  G01N33/0047 ,  G01N2021/216 ,  G01N2021/8578 ,  G01N2201/0221

Abstract: An air quality measuring device, according to one embodiment of the present disclosure, includes a top case, a bottom case provided below the top case, a circular light guide unit which is disposed between the top case and the bottom case. The air quality measuring device has an outer portion and an inner portion, and includes a coupling boss positioned around the outer portion so as to be coupled to the top case or the bottom case. The air quality measuring device also includes a light source unit positioned on the inner portion, where the light guide unit has a light exit surface formed on the outer portion and may include a rib which is positioned around the outer portion and protrudes from one surface thereof.

公开(公告)号：US20240199540A1

公开(公告)日：2024-06-20

申请号：US18312825

申请日：2023-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyoon PARK ,  Hana KIM ,  Kyuhyun IM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Hyeran KIM ,  Changheon LEE

IPC: C07C323/09 ,  G03F7/004 ,  G03F7/20

CPC classification number: C07C323/09 ,  G03F7/0042 ,  G03F7/2004 ,  G03F7/2059 ,  C07C2601/16

Abstract: Provided are a carboxylate salt represented by Formula 1, a photoresist composition including the same, and a pattern forming method using the same:






wherein A11, L11, L12, a11, a12, R11 to R13, b13, n11, n12, and M+ in Formula 1 are defined as described in the specification.

公开(公告)号：US20220139714A1

公开(公告)日：2022-05-05

申请号：US17319503

申请日：2021-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Sangki NAM ,  Taesun SHIN

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.