公开(公告)号：US11189503B2

公开(公告)日：2021-11-30

申请号：US16420776

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hoo Kim ,  Kuntack Lee ,  Yong-Jhin Cho ,  Chawon Koh ,  Sunghyun Park ,  Hyosan Lee ,  Ji Hoon Cha ,  Soo Young Choi

IPC: H01L21/67 ,  H01L21/02

Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

公开(公告)号：US09158204B2

公开(公告)日：2015-10-13

申请号：US13962173

申请日：2013-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon Koh ,  Su Min Kim ,  Hyunwoo Kim ,  Hyojin Yun

IPC: G03F7/42 ,  G03F7/40 ,  H01L21/02

CPC classification number: G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/426 ,  H01L21/0206

Abstract: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

Abstract translation: 光刻冲洗液包括去离子水和表面活性剂，所述表面活性剂包括环胺基团和至少一个与环胺基团连接或稠合的非胺环状基团，其中所述环胺基团包括具有碳数的环 为4〜6，非胺环基包括碳数为5〜8的环。

公开(公告)号：US11327398B2

公开(公告)日：2022-05-10

申请号：US16399473

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd. ,  Inpria Corporation

Inventor： Chawon Koh ,  Tsunehiro Nishi ,  Brian Cardineau ,  Sangyoon Woo ,  Jason Stowers ,  Soo Young Choi

IPC: G03F7/004 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  G03F7/20 ,  G03F7/32

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

公开(公告)号：US20220059345A1

公开(公告)日：2022-02-24

申请号：US16996372

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon Koh ,  Soyeon Yoo ,  Sooyoung Choi ,  Tsunehiro Nishi ,  Kwangsub Yoon ,  Brian Cardineau ,  Kumagai Tomoya

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/38

Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.

公开(公告)号：US20250093772A1

公开(公告)日：2025-03-20

申请号：US18777777

申请日：2024-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chawon Koh ,  Hyo Jae Yoon ,  Tsunehiro Nishi ,  Gayeong Lim

IPC: G03F7/004 ,  C07F7/22

Abstract: The present invention relates to PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PATTERNS USING A PHOTORESIST COMPOSITION. Disclosed is a photoresist composition including an organometallic compound including a ring including a metal, a first heteroatom coordinated to the metal, and a second heteroatom covalently bonded to the metal, and an aromatic ring substituted or fused to the ring; and a solvent.

公开(公告)号：US12112948B2

公开(公告)日：2024-10-08

申请号：US16996372

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon Koh ,  Soyeon Yoo ,  Sooyoung Choi ,  Tsunehiro Nishi ,  Kwangsub Yoon ,  Brian Cardineau ,  Kumagai Tomoya

IPC: G03F7/38 ,  G03F7/004 ,  H01L21/027

CPC classification number: H01L21/0274 ,  G03F7/0042 ,  G03F7/38

Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.

公开(公告)号：US20230400764A1

公开(公告)日：2023-12-14

申请号：US18120248

申请日：2023-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Kyun Lee ,  Chawon Koh ,  Ye-Jin Ku ,  Tsunehiro Nishi ,  Hyunwoo Kim ,  Hyung-Ju Ahn

IPC: G03F7/004 ,  C07F7/22 ,  G03F7/16

CPC classification number: G03F7/0042 ,  C07F7/2224 ,  G03F7/168

Abstract: A resist material is combined with a ligand containing four or more fluorine atoms and is represented by the following formula: [(R1M)iOjXk(OH)m] (OH)nR2p, wherein one of “R1” and “R2” is CaFbHc, CaFbHcNd, CaFbHcPd, CaFbHcSd, CaFbHcOd, CaFbHcNdSe, CaFbHcPdSe, CaFbHcNdOe, or CaFbHcPdOe, the other of “R1” and “R2” is CaHc, CaFbHc, CaFbHcNd, CaFbHcPd, CaFbHcSd, CaFbHcOd, CaFbHcNdSe, CaFbHcPdSe, CaFbHcNdOe, or CaFbHcPdOe, “a” and “c” are each independently an integer of 0 to 20, “b” is an integer of 4 to 30, “d” and “e” are each independently an integer of 0 to 5, “M” is one metal selected from a specified list, “i” is an integer from 1 to 12, “j” is an integer of 1 to 14, “X” is a halogen selected from a specified list, “k” and “m” are each independently an integer of 0 to 6, and “n” and “p” are each independently an integer of 0 to 2.

公开(公告)号：US20210380612A1

公开(公告)日：2021-12-09

申请号：US17144242

申请日：2021-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chawon Koh ,  Moonil Jung ,  Tsunehiro Nishi ,  Kunwoo Baek ,  Mijeong Song ,  Jaehyun Kim ,  Seung Han

IPC: C07F7/22 ,  G03F7/004

Abstract: Described herein are photoresist compositions comprising a metal structure including an organometallic compound, an organometallic nanoparticle, and/or an organometallic cluster; a C2 to C20 organic densifier including oxygen atoms; and a solvent. Also described herein are methods of using a photoresist composition.

公开(公告)号：US10353290B2

公开(公告)日：2019-07-16

申请号：US15183541

申请日：2016-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol Hong Park ,  Chawon Koh ,  Hyunwoo Kim ,  Sang-Yoon Woo ,  Hyejin Jeon

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027 ,  G03F7/09 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11

Abstract: The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.

公开(公告)号：US20240255845A1

公开(公告)日：2024-08-01

申请号：US18543114

申请日：2023-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungyeol Baek ,  Chawon Koh ,  Jiyoung Park ,  Tsunehiro Nishi ,  Wonjoon Son

IPC: G03F7/004 ,  C07F7/22

CPC classification number: G03F7/0042 ,  C07F7/2284

Abstract: A photoresist composition includes an organometallic compound represented by Formula 1.