公开(公告)号：US20150123078A1

公开(公告)日：2015-05-07

申请号：US14506041

申请日：2014-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： David SEO ,  Ho-jung KIM ,  In-kyeong YOO ,  Myoung-jae LEE ,  Seong-ho CHO

IPC: H01L29/16 ,  H01L29/792 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/1606 ,  H01L27/1052 ,  H01L27/10808 ,  H01L29/66015 ,  H01L29/66037 ,  H01L29/66045 ,  H01L29/685 ,  H01L29/7606

Abstract: According to example embodiments, a graphene device includes a first electrode, a first insulation layer on the first electrode, an information storage layer on the first insulation layer, a second insulation layer on the information storage layer, a graphene layer on the second insulation layer, a third insulation layer on a first region of the graphene layer, a second electrode on the third insulation layer, and a third electrode on a second region of the graphene layer.

Abstract translation: 根据示例性实施例，石墨烯装置包括第一电极，第一电极上的第一绝缘层，第一绝缘层上的信息存储层，信息存储层上的第二绝缘层，第二绝缘层上的石墨烯层 ，在所述石墨烯层的第一区域上的第三绝缘层，所述第三绝缘层上的第二电极和所述石墨烯层的第二区域上的第三电极。

公开(公告)号：US20130203222A1

公开(公告)日：2013-08-08

申请号：US13796918

申请日：2013-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong CHUNG ,  Seung-jae BAEK ,  Sun-ae SEO ,  Yun-sung WOO ,  Jin-seong HEO ,  David SEO

IPC: H01L29/66

CPC classification number: H01L29/66045 ,  H01L23/522 ,  H01L27/0688 ,  H01L27/124 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/7781 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode.

Abstract translation: 石墨烯电子器件可以包括硅衬底，硅衬底上的连接线，硅衬底上的第一电极和第二电极，以及硅衬底上的层间电介质。 层间电介质可以被配置为覆盖连接线，并且第一和第二电极和层间电介质可以被进一步配置为暴露第一和第二电极的至少一部分。 所述石墨烯电子器件还可以包括在所述层间电介质上的绝缘层和所述绝缘层上的石墨烯层，所述石墨烯层具有第一端和第二端。 石墨烯层的第一端可以连接到第一电极，并且石墨烯层的第二端可以连接到第二电极。

公开(公告)号：US20140299944A1

公开(公告)日：2014-10-09

申请号：US14244223

申请日：2014-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong CHUNG ,  David SEO ,  Seong-jun PARK ,  Kyung-eun BYUN ,  Hyun-jae SONG ,  Hee-jun YANG ,  Jin-seong HEO

IPC: H01L29/47 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/47 ,  B82Y10/00 ,  H01L21/74 ,  H01L29/0847 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/413 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66477 ,  H01L29/66977 ,  H01L29/7781 ,  H01L29/7839

Abstract: A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the first electrode, the graphene layer, and the semiconductor substrate.

Abstract translation: 石墨烯装置包括：具有第一区域和第二区域的半导体衬底; 在第一区域上但不在半导体衬底的第二区域上的石墨烯层; 在所述石墨烯层的第一部分上的第一电极; 在所述石墨烯层的第二部分上的第二电极; 石墨烯层和第二电极之间的绝缘层; 以及在所述半导体衬底的第二区域上的第三电极。 半导体衬底具有由第一电极，石墨烯层和半导体衬底的结合形成的可调肖特基势垒。

公开(公告)号：US20140158989A1

公开(公告)日：2014-06-12

申请号：US14103079

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-eun BYUN ,  Seong-jun PARK ,  David SEO ,  Hyun-jae SONG ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/16 ,  H01L29/775

CPC classification number: H01L29/1606 ,  H01L29/1087 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/458 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78618

Abstract: According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 1019 cm−3, and a depletion width of less than or equal to 3 nm.

Abstract translation: 根据示例性实施例，电子设备包括：半导体层; 直接接触所述半导体层的期望（和/或备选地预定）区域的石墨烯; 和石墨烯上的金属层。 半导体层的期望（和/或备选地）预定区域包括以下之一：恒定的掺杂密度，等于或小于1019cm-3的掺杂密度以及小于或等于3nm的耗尽宽度 。

公开(公告)号：US20140014905A1

公开(公告)日：2014-01-16

申请号：US13772693

申请日：2013-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Jae-ho LEE ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Hyung-cheol SHIN ,  Jae-hong LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract translation: 根据示例性实施例，场效应晶体管包括在衬底上的石墨烯通道层。 石墨烯通道层限定狭缝。 源电极和漏极彼此间隔开并布置成向石墨烯通道层施加电压。 栅极绝缘层在石墨烯沟道层和栅电极之间。

公开(公告)号：US20130175506A1

公开(公告)日：2013-07-11

申请号：US13733304

申请日：2013-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong HEO ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Hee-jun YANG ,  Hyun-jong CHUNG

IPC: H01L29/786

CPC classification number: H01L29/78684 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696

Abstract: A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate.

Abstract translation: 开关器件包括在第一电极和形成在衬底上的第二电极之间的三维堆叠结构中形成的半导体层，石墨烯层，栅极绝缘层和栅极。

公开(公告)号：US20140231752A1

公开(公告)日：2014-08-21

申请号：US14180928

申请日：2014-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin SHIN ,  Kyung-eun BYUN ,  Hyun-jae SONG ,  Seong-jun PARK ,  David SEO ,  Yun-sung WOO ,  Dong-wook LEE ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO ,  In-kyeong YOO

IPC: H01L29/16 ,  H01L33/34 ,  H01L31/028 ,  H01L29/786

CPC classification number: H01L29/1606 ,  H01L29/786 ,  H01L29/78642 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/08 ,  H01L33/34 ,  H01L51/0046 ,  H01L51/0504 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0566 ,  H01L51/057 ,  H01L51/428 ,  H01L51/50

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract translation: 提供了石墨烯装置和包括该石墨烯装置的电子装置。 根据示例性实施例，石墨烯装置包括晶体管，其包括源极，栅极和漏极，载流子移动的有源层以及栅极和有源层之间的石墨烯层。 石墨烯层可以被配置为既用作有源层的电极和晶体管的沟道层。

公开(公告)号：US20140141600A1

公开(公告)日：2014-05-22

申请号：US13917786

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Wook LEE ,  Hyeon-jin SHIN ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Yun-sung WOO ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L21/02

CPC classification number: H01L21/02527 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02656 ,  H01L29/1606

Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.

Abstract translation: 制备石墨烯的方法包括在基板上形成碳化硅薄膜，在碳化硅薄膜上形成金属薄膜，通过加热碳化硅薄膜和金属薄膜，在基板上形成金属复合层和石墨烯 电影。

公开(公告)号：US20130277644A1

公开(公告)日：2013-10-24

申请号：US13861726

申请日：2013-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： David SEO ,  Sang-wook KIM ,  Seong-jun PARK ,  Young-jun YUN ,  Yung-hee Yvette LEE ,  Chang-seung LEE

IPC: H01L29/775

CPC classification number: H01L29/775 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/42376 ,  H01L29/7781 ,  H01L29/7789

Abstract: A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.

Abstract translation: 石墨烯开关装置在半导体衬底的第一和第二区域中分别包括第一电极和绝缘层，在第一和第二区域之间的半导体衬底的表面上的多个金属颗粒，多个 金属颗粒并在绝缘层上延伸，在第二区域中的石墨烯层上的第二电极，并且被配置为面对绝缘层，构造成覆盖石墨烯层的栅极绝缘层和栅极绝缘层上的栅电极。 半导体衬底在石墨烯层和第一电极之间形成能量势垒。

公开(公告)号：US20150228804A1

公开(公告)日：2015-08-13

申请号：US14693680

申请日：2015-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho LEE ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Hyung-cheol SHIN ,  Jae-hong LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract translation: 根据示例性实施例，场效应晶体管包括在衬底上的石墨烯通道层。 石墨烯通道层限定狭缝。 源电极和漏极彼此间隔开并布置成向石墨烯通道层施加电压。 栅极绝缘层在石墨烯通道层和栅电极之间。