公开(公告)号：US20230369039A1

公开(公告)日：2023-11-16

申请号：US18315322

申请日：2023-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhyea KO ,  Daihyun Kim ,  Thanh Cuong Nguyen ,  Soyoung Lee ,  Jihyun Lee ,  Hoon Han ,  Byungkeun Hwang ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Youjoung Cho

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0212 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/31133 ,  H01L21/31111

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.

公开(公告)号：US11746121B2

公开(公告)日：2023-09-05

申请号：US17072096

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuhee Park ,  Younjoung Cho ,  Haruyoshi Sato ,  Kazuki Harano ,  Hiroyuki Uchiuzou

IPC: C23C16/40 ,  C07F11/00 ,  C01G39/02 ,  C23C16/34 ,  C01B21/06

CPC classification number: C07F11/00 ,  C01B21/062 ,  C01G39/02 ,  C23C16/34 ,  C23C16/405

Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

公开(公告)号：US20230215723A1

公开(公告)日：2023-07-06

申请号：US18147733

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNHYEA KO ,  Hoon Han ,  Soyoung Lee ,  Thanh Cuong Nguyen ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Daekeon Kim ,  Younjoung Cho ,  Jiyu Choi ,  Byungkeun Hwang

IPC: H01L21/02 ,  C23C16/455 ,  C23C2/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01L21/02323 ,  H01L21/0226 ,  C23C16/45525 ,  C23C2/026 ,  H01L21/31116

Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an α-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.

公开(公告)号：US20210380622A1

公开(公告)日：2021-12-09

申请号：US17215056

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd. ,  ADEKA CORPORATION

Inventor： Seung-Min Ryu ,  Gyu-Hee Park ,  Youn Joung Cho ,  Kazuki Harano ,  Takanori Koide ,  Wakana Fuse ,  Yoshiki Manabe ,  Yutaro Aoki ,  Hiroyuki Uchiuzou ,  Kazuya Saito

IPC: C07F17/00 ,  C23C16/18 ,  C23C16/455

Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.

公开(公告)号：US10752645B2

公开(公告)日：2020-08-25

申请号：US16439369

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10 ,  C23C16/40 ,  C23C16/455

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US10329312B2

公开(公告)日：2019-06-25

申请号：US15092953

申请日：2016-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.