公开(公告)号：US09306005B2

公开(公告)日：2016-04-05

申请号：US14103079

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-eun Byun ,  Seong-jun Park ,  David Seo ,  Hyun-jae Song ,  Jae-ho Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/45 ,  H01L29/739 ,  H01L29/786 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L29/1606 ,  H01L29/1087 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/458 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78618

Abstract: According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 1019 cm−3, and a depletion width of less than or equal to 3 nm.

Abstract translation: 根据示例性实施例，电子设备包括：半导体层; 直接接触所述半导体层的期望（和/或备选地预定）区域的石墨烯; 和石墨烯上的金属层。 半导体层的期望（和/或备选地）预定区域包括以下之一：恒定的掺杂密度，等于或小于1019cm-3的掺杂密度以及小于或等于3nm的耗尽宽度 。

公开(公告)号：US09053932B2

公开(公告)日：2015-06-09

申请号：US13917786

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Wook Lee ,  Hyeon-jin Shin ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Yun-sung Woo ,  Jae-ho Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L21/20 ,  H01L21/36 ,  C01B31/04 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02527 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02656 ,  H01L29/1606

Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.

Abstract translation: 制备石墨烯的方法包括在基板上形成碳化硅薄膜，在碳化硅薄膜上形成金属薄膜，通过加热碳化硅薄膜和金属薄膜，在基板上形成金属复合层和石墨烯 电影。

公开(公告)号：US10849597B2

公开(公告)日：2020-12-01

申请号：US14631183

申请日：2015-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-ho Lee ,  Soon-jae Hong ,  Gi-hun Yun

IPC: A61B8/00 ,  G06F3/0488 ,  G06T7/62 ,  G06F3/041 ,  G01S7/52 ,  A61B8/08

Abstract: An ultrasound measurement method includes: providing a first object and a second object within an ultrasound image displayed on a touch screen; activating the first object and the second object, to be movable to perform a measurement on the ultrasound image; receiving a touch-and-drag input with respect to at least one of the first and second objects; and displacing a corresponding one of the first and second objects on the ultrasound image in correspondence with the received touch-and-drag input.

公开(公告)号：US09318556B2

公开(公告)日：2016-04-19

申请号：US14328339

申请日：2014-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-hong Park ,  Jae-woo Shim ,  Hyung-youl Park ,  Jae-ho Lee

IPC: H01L29/16 ,  H01L29/78

CPC classification number: H01L29/1606 ,  H01L29/78

Abstract: Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the semiconductor substrate, a graphene layer on the insulating thin film, a first electrode connected to an end of the graphene layer, a second electrode that is separate from an other end of the graphene layer and contacts the semiconductor substrate, a gate insulating layer covering the graphene layer, and a gate electrode on the gate insulating layer, wherein an energy barrier is formed between the semiconductor substrate and the graphene layer.

Abstract translation: 提供了具有可调屏障的石墨烯晶体管。 所述石墨烯晶体管包括半导体衬底，设置在所述半导体衬底上的绝缘薄膜，所述绝缘薄膜上的石墨烯层，连接到所述石墨烯层的端部的第一电极，与所述石墨烯层的另一端分离的第二电极， 所述石墨烯层和所述半导体衬底接触，覆盖所述石墨烯层的栅极绝缘层和所述栅极绝缘层上的栅电极，其中在所述半导体衬底和所述石墨烯层之间形成能量势垒。

公开(公告)号：US09040957B2

公开(公告)日：2015-05-26

申请号：US13772693

申请日：2013-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hyung-cheol Shin ,  Jae-hong Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L29/16 ,  B82Y10/00 ,  H01L29/10

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract translation: 根据示例性实施例，场效应晶体管包括在衬底上的石墨烯通道层。 石墨烯通道层限定狭缝。 源电极和漏极彼此间隔开并布置成向石墨烯通道层施加电压。 栅极绝缘层在石墨烯沟道层和栅电极之间。

公开(公告)号：US11096668B2

公开(公告)日：2021-08-24

申请号：US15375444

申请日：2016-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-ho Lee ,  Soon-jae Hong ,  Myong-woo Lee ,  Gi-hun Yun ,  Su-jin Kim

IPC: A61B8/00 ,  A61B8/08 ,  G06F3/0488 ,  G06T7/62 ,  G06F3/0484 ,  G01S7/52

Abstract: An ultrasound apparatus includes a touch screen configured to display, on an ultrasound image, a touch recognition region of an object used as a measurement mark; and a controller configured to move the object and the touch recognition region, in response to an input for touching and dragging the touch recognition region, to detect, from a portion of the ultrasound image which corresponds to the touch recognition region, a line formed by connecting points at which a brightness variation of a pixel is greater than a threshold value, and to move the object to a position of the detected line by using coordinates of the detected line.

公开(公告)号：US09570684B2

公开(公告)日：2017-02-14

申请号：US14340108

申请日：2014-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-hong Park ,  Hyung-youl Park ,  Jae-woo Shim ,  Jae-ho Lee

IPC: H01L51/00 ,  H01L21/225 ,  H01L21/762 ,  H01L51/05 ,  H01L29/16 ,  H01L29/24

CPC classification number: H01L51/002 ,  H01L21/225 ,  H01L21/2253 ,  H01L21/76251 ,  H01L29/1606 ,  H01L29/24 ,  H01L51/0558

Abstract: Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate.

Abstract translation: 示例实施例涉及掺杂二维半导体的方法。 该方法包括在衬底上形成半导体层，将离子注入到半导体层中，在半导体层上形成由二维半导体层或有机半导体层形成的掺杂层，并通过扩散掺杂层 半导体层通过退火衬底进入掺杂层。

公开(公告)号：US09105556B2

公开(公告)日：2015-08-11

申请号：US13906657

申请日：2013-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Jae-ho Lee ,  Hyun-jong Chung

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/336 ,  H01L29/16 ,  H01L29/786 ,  H01L29/08 ,  H01L29/78 ,  H01L29/739 ,  B82Y99/00

CPC classification number: H01L29/16 ,  B82Y99/00 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696

Abstract: According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate.

Abstract translation: 根据示例性实施例，隧道场效应晶体管（TFET）包括衬底上的第一电极，第一电极的一部分上的半导体层，半导体层上的石墨烯通道，石墨烯通道上的第二电极， 栅极绝缘层，栅极绝缘层上的栅电极。 第一电极可以包括与衬底的第一区域相邻的部分。 半导体层可以在石墨烯通道和第一电极的部分之间。 石墨烯通道可以延伸超过半导体层和第一电极的至少一个的边缘到衬底的第一区域之上。

公开(公告)号：US09048310B2

公开(公告)日：2015-06-02

申请号：US13964353

申请日：2013-08-12

Applicant: Samsung Electronics Co., Ltd. ,  Seoul National University R & DB Foundation

Inventor： Jae-ho Lee ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hyung-cheol Shin ,  Jae-hong Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/02 ,  H01L29/78

CPC classification number: H01L29/78 ,  H01L29/1606 ,  H01L29/407 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88

Abstract: According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.

Abstract translation: 根据示例实施例，具有可调谐屏障的石墨烯开关器件包括半导体衬底，其包括掺杂有杂质的第一阱，在半导体衬底的第一区域上的第一电极，在半导体衬底的第二区域上的绝缘层 在所述绝缘层上的石墨烯层，并且朝向所述第一电极延伸到所述半导体衬底上，所述石墨烯层和绝缘层上的第二电极，所述石墨烯层上的栅极绝缘层和所述栅极绝缘层上的栅极电极。 半导体衬底的第一区域和第二区域可以彼此间隔开。 石墨烯层与第一电极间隔开。 石墨烯层的下部可以接触第一孔。 第一阱被配置为在石墨烯层和第一电极之间形成能量势垒。

公开(公告)号：US09373685B2

公开(公告)日：2016-06-21

申请号：US14180928

申请日：2014-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin Shin ,  Kyung-eun Byun ,  Hyun-jae Song ,  Seong-jun Park ,  David Seo ,  Yun-sung Woo ,  Dong-wook Lee ,  Jae-ho Lee ,  Hyun-jong Chung ,  Jin-seong Heo ,  In-kyeong Yoo

IPC: H01L29/78 ,  H01L29/16 ,  H01L51/00 ,  H01L51/42 ,  H01L51/50 ,  H01L51/05 ,  H01L29/786 ,  H01L31/028 ,  H01L33/34 ,  H01L31/08

CPC classification number: H01L29/1606 ,  H01L29/786 ,  H01L29/78642 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/08 ,  H01L33/34 ,  H01L51/0046 ,  H01L51/0504 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0566 ,  H01L51/057 ,  H01L51/428 ,  H01L51/50

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract translation: 提供了石墨烯装置和包括该石墨烯装置的电子装置。 根据示例性实施例，石墨烯装置包括晶体管，其包括源极，栅极和漏极，载流子移动的有源层以及栅极和有源层之间的石墨烯层。 石墨烯层可以被配置为既用作有源层的电极和晶体管的沟道层。