公开(公告)号：US10186545B2

公开(公告)日：2019-01-22

申请号：US15244073

申请日：2016-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jinseong Heo ,  Seongjun Park

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109

Abstract: An image sensor may include visible light detectors and a near-infrared light detector. The near-infrared light detector may contain a material highly sensitive to near-infrared rays, and thus the size of the near-infrared light detector may be reduced.

公开(公告)号：US20170330935A1

公开(公告)日：2017-11-16

申请号：US15605057

申请日：2017-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung Lee ,  Jaeho Lee ,  Seongjun Park

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/78 ,  H01L21/225 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/0665 ,  H01L21/2253 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

公开(公告)号：US11888016B2

公开(公告)日：2024-01-30

申请号：US17555977

申请日：2021-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Eunkyu Lee ,  Seongjun Park ,  Kiyoung Lee ,  Jinseong Heo

IPC: H01L27/146 ,  H01L31/0264 ,  B82Y15/00 ,  H01L31/074

CPC classification number: H01L27/14667 ,  H01L27/14636 ,  H01L31/0264 ,  H01L31/074 ,  B82Y15/00

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US10529877B2

公开(公告)日：2020-01-07

申请号：US15825388

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Seongjun Park ,  Yongseon Shin ,  Woojong Yu

IPC: H01L29/06 ,  H01L31/032 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41

Abstract: Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.

公开(公告)号：US10074737B2

公开(公告)日：2018-09-11

申请号：US14932392

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jinseong Heo ,  Seongjun Park

IPC: H01L23/00 ,  H01L29/778 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/778 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78603 ,  H01L29/78684 ,  H01L51/0541

Abstract: A method of manufacturing a flexible device including a two-dimensional (2D) material, e.g., graphene, includes forming a dielectric layer on a first substrate, forming a two-dimensional (2D) material layer on the dielectric layer; forming a pattern in the 2D material layer, forming a second substrate on the dielectric layer and the 2D material layer, the first substrate including a flexible material, removing the first substrate, and forming a source electrode, a drain electrode, and a gate electrode on the dielectric layer.

公开(公告)号：US20180197956A1

公开(公告)日：2018-07-12

申请号：US15825344

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L29/16 ,  H01L31/0352 ,  H01L27/146 ,  H01L27/15 ,  H01L27/144 ,  H01L29/12

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US09515144B2

公开(公告)日：2016-12-06

申请号：US14747243

申请日：2015-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Jaeho Lee ,  Jin-seong Heo ,  Kiyoung Lee

IPC: H01L29/16 ,  H01L29/786 ,  H01L29/423 ,  H01L29/778 ,  H01L29/06 ,  H01L29/165 ,  H01L29/417

CPC classification number: H01L29/1606 ,  H01L29/0665 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/778 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78696

Abstract: Example embodiments relate to a fin-type graphene device. The fin-type graphene device includes a substrate, a graphene channel layer substantially vertical to the substrate, a gate insulating layer that covers one side surface of the graphene channel layer, a gate electrode on the gate insulating layer, and a source electrode and a drain electrode that are formed separately from each other on other side surface of the graphene channel layer.

Abstract translation: 示例性实施例涉及翅片型石墨烯装置。 翅片型石墨烯装置包括基板，基本上垂直于基板的石墨烯通道层，覆盖石墨烯通道层的一个侧表面的栅极绝缘层，栅极绝缘层上的栅电极以及源极和 漏电极，其在石墨烯通道层的另一侧表面上彼此分开形成。

公开(公告)号：US11177352B2

公开(公告)日：2021-11-16

申请号：US16749367

申请日：2020-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Seongjun Park

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/778 ,  H01L33/26 ,  H01L29/267 ,  H01L29/08 ,  H01L29/786 ,  H01L29/24 ,  H01L45/00 ,  H01L31/028 ,  H01L31/113 ,  H01L29/417 ,  H01L33/04 ,  H01L33/34

Abstract: Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.

公开(公告)号：US11133179B2

公开(公告)日：2021-09-28

申请号：US16697774

申请日：2019-11-27

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung Lee ,  Woojin Lee ,  Myoungho Jeong ,  Yongsung Kim ,  Eunsun Kim ,  Hyosik Mun ,  Jooho Lee ,  Changseung Lee ,  Kyuho Cho ,  Darrell G. Schlom ,  Craig J. Fennie ,  Natalie M. Dawley ,  Gerhard H. Olsen ,  Zhe Wang

IPC: H01L49/02 ,  H01L21/02

Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

公开(公告)号：US10553730B2

公开(公告)日：2020-02-04

申请号：US15603796

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung Lee ,  Jinseong Heo ,  Jaeho Lee ,  Haeryong Kim ,  Seongjun Park ,  Hyeonjin Shin ,  Eunkyu Lee ,  Sanghyun Jo

IPC: H01L31/0216 ,  G01N21/59 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.