公开(公告)号：US11791209B2

公开(公告)日：2023-10-17

申请号：US17971807

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  Jaekang Koh ,  Tae-Jong Han

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/3213

CPC classification number: H01L21/76895 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/7685 ,  H01L21/76865

Abstract: Provided are a method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device. The method includes forming an etch target layer on a substrate, forming thermally decomposable patterns spaced apart from each other on the etch target layer, forming a first mask pattern covering at least sidewalls of the thermally decomposable patterns, and removing the thermally decomposable patterns by a heating method to expose a sidewall of the first mask pattern.

公开(公告)号：US09728226B2

公开(公告)日：2017-08-08

申请号：US14622081

申请日：2015-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Eun Kim ,  Chang-Gun Um ,  Seung-Heon Lee ,  Kyung-Ho Chae ,  Kyung-Il Lee

IPC: G11B27/031 ,  H04N5/765 ,  H04N9/802 ,  G11B27/36

CPC classification number: G11B27/031 ,  G11B27/36 ,  H04N5/765 ,  H04N9/802

Abstract: A method for creating a content in an electronic device is provided. The method includes acquiring first media data acquired by at least one external electronic device, acquiring second media data on a basis of at least a part of the first media data, recognizing a feature of the second media data acquired by the at least one external electronic device, and creating the content on a basis of at least a part of the feature of the second media data.

公开(公告)号：US11882691B2

公开(公告)日：2024-01-23

申请号：US17858361

申请日：2022-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  ByeongJu Bae

IPC: H01L21/3213 ,  H01L21/033 ,  H10B12/00 ,  H01L21/8234

CPC classification number: H10B12/482 ,  H01L21/0332 ,  H01L21/32139 ,  H01L21/823475 ,  H01L21/823481 ,  H10B12/0335 ,  H10B12/315 ,  H10B12/485

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines.

公开(公告)号：US11849570B2

公开(公告)日：2023-12-19

申请号：US17348912

申请日：2021-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeong Ju Bae ,  Seung-Heon Lee ,  Ik Soo Kim ,  Byoung Deog Choi

IPC: H10B63/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/84 ,  H10B63/24 ,  H10N70/011 ,  H10N70/231

Abstract: A semiconductor memory device and associated methods, the device including first and second lower conductive lines extending in a first direction; a first middle conductive line on the first and second lower conductive lines and extending in a second direction; first and second memory cells between the first and second lower conductive lines and the first middle conductive line; an air gap support layer between the first and second memory cells; and a first air gap between the first and second memory cells and under the air gap support layer, wherein an upper surface of the air gap support layer lies in a same plane as the first and second memory cells, the first and second memory cells include first and second OTS layers and first and second phase-change layers, and the first air gap overlaps the first and second phase-change layers.

公开(公告)号：US09508383B2

公开(公告)日：2016-11-29

申请号：US15014755

申请日：2016-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Eun Kim ,  Chang-Gun Um ,  Seung-Heon Lee ,  Kyung-Ho Chae ,  Kyung-Il Lee

IPC: H04N5/765 ,  G11B27/031 ,  H04N9/802 ,  G11B27/36

CPC classification number: G11B27/031 ,  G11B27/36 ,  H04N5/765 ,  H04N9/802

Abstract: A method for creating a content in an electronic device is provided. The method includes acquiring first media data acquired by at least one external electronic device, acquiring second media data on a basis of at least a part of the first media data, recognizing a feature of the second media data acquired by the at least one external electronic device, and creating the content on a basis of at least a part of the feature of the second media data.

Abstract translation: 提供了一种用于在电子设备中创建内容的方法。 该方法包括获取由至少一个外部电子设备获取的第一媒体数据，基于第一媒体数据的至少一部分获取第二媒体数据，识别由至少一个外部电子获取的第二媒体数据的特征 设备，以及基于第二媒体数据的特征的至少一部分来创建内容。

公开(公告)号：US11482453B2

公开(公告)日：2022-10-25

申请号：US16784830

申请日：2020-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  Jaekang Koh ,  Tae-Jong Han

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/3213

Abstract: Provided are a method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device. The method includes forming an etch target layer on a substrate, forming thermally decomposable patterns spaced apart from each other on the etch target layer, forming a first mask pattern covering at least sidewalls of the thermally decomposable patterns, and removing the thermally decomposable patterns by a heating method to expose a sidewall of the first mask pattern.

公开(公告)号：US10068767B2

公开(公告)日：2018-09-04

申请号：US15291377

申请日：2016-10-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Sik Seo ,  Seung-Heon Lee ,  Hyun-Woo Lee

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/308

Abstract: A method for fabricating a semiconductor device includes forming a first mask pattern on a first film to extend in a first direction, forming a first spacer on either side wall of the first mask pattern, forming a second film to cover the first spacer and the first film, and forming a second mask pattern on the second film. The second mask pattern extends in a second direction different from the first direction. The method further includes forming a second spacer on either side wall of the second mask pattern, etching the first film using the first spacer and the second spacer as etch masks to form a contact pattern, and removing the first and second spacers to expose the contact pattern.

公开(公告)号：US09478253B2

公开(公告)日：2016-10-25

申请号：US15014755

申请日：2016-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Eun Kim ,  Chang-Gun Um ,  Seung-Heon Lee ,  Kyung-Ho Chae ,  Kyung-Il Lee

IPC: H04N5/765 ,  G11B27/031 ,  H04N9/802 ,  G11B27/36

Abstract: A method for creating a content in an electronic device is provided. The method includes acquiring first media data acquired by at least one external electronic device, acquiring second media data on a basis of at least a part of the first media data, recognizing a feature of the second media data acquired by the at least one external electronic device, and creating the content on a basis of at least a part of the feature of the second media data.

公开(公告)号：US11665883B2

公开(公告)日：2023-05-30

申请号：US17202465

申请日：2021-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inkyoung Heo ,  Hyo-Sub Kim ,  Sohyun Park ,  Taejin Park ,  Seung-Heon Lee ,  Youn-Seok Choi ,  Sunghee Han ,  Yoosang Hwang

IPC: H01L27/108 ,  H01L23/532 ,  H01L21/768 ,  H01L23/482 ,  H01L21/762

CPC classification number: H01L27/10814 ,  H01L21/7682 ,  H01L23/5329 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L21/76264 ,  H01L23/4821

Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a semiconductor substrate, a bit line electrically connected to the first impurity region, a storage node contact electrically connected to the second impurity region, an air gap between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, a buried dielectric pattern on a sidewall of the landing pad and on the air gap, and a spacer capping pattern between the buried dielectric pattern and the air gap.

公开(公告)号：US11626476B2

公开(公告)日：2023-04-11

申请号：US17094104

申请日：2020-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-young Yi ,  Youn-seok Choi ,  Young-min Ko ,  Mun-jun Kim ,  Hong-gun Kim ,  Seung-Heon Lee

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.