公开(公告)号：US20140235007A1

公开(公告)日：2014-08-21

申请号：US14146477

申请日：2014-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Nam Sung KIM ,  Dong Joon KIM ,  Kong Tan SA ,  Tong Ik SHIN ,  Do Young RHEE ,  Jeong Wook LEE

IPC: H01L33/00 ,  H01L21/673

CPC classification number: H01L33/007 ,  C23C16/4583 ,  C23C16/54 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/67326 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/32

Abstract: A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes.

Abstract translation: 一种制造半导体发光器件的方法包括在衬底上顺序地生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光层。 发光层的形成包括第一生长过程，第二生长过程和转移过程。 第一生长过程使用具有第一曲率的安装表面的第一感受器。 第二生长过程使用具有不同于第一曲率的第二曲率的安装表面的第二感受器。 转移过程在第一和第二生长过程之间将衬底从第一感受器转移到第二感受器。

公开(公告)号：US20150207034A1

公开(公告)日：2015-07-23

申请号：US14577826

申请日：2014-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan SAKONG ,  Byoung Kyun KIM ,  Tong Ik SHIN ,  Jin Young LIM ,  Young Sun KIM ,  Suk Ho YOON

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/22 ,  H01L33/10

Abstract: A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency.

Abstract translation: 半导体发光器件可以包括形成在衬底上并在其中具有缺陷区域的基底半导体层; 设置在与所述基底半导体层上的所述缺陷区域对应的区域中的空腔; 封盖层，其设置成覆盖所述基底半导体层和所述空腔的至少一个区域; 以及发光结构，其设置在所述覆盖层上并且包括第一导电型半导体层，有源层和第二导电型半导体层。 可以减少在发光结构中形成的晶格缺陷，以提高发光效率。