公开(公告)号：US20250149311A1

公开(公告)日：2025-05-08

申请号：US18762910

申请日：2024-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho IM ,  Younseon WANG ,  Keonwoo KIM ,  Youngjin NOH ,  Dougyong SUNG ,  Wonhee LEE ,  Sungwook JUNG

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/683

Abstract: A substrate processing apparatus may include a chucking member configured to support a substrate, a base plate configured to support the chucking member, a bonding layer located between the chucking member and the base plate, the bonding layer configured to adhere the chucking member to the base plate, a coating layer on an outer side surface of the bonding layer, and a bonding protective member surrounding an outer side surface of the coating layer, wherein the coating layer conformally covers the outer side surface of the bonding layer.

公开(公告)号：US20250157686A1

公开(公告)日：2025-05-15

申请号：US18810735

申请日：2024-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younseon WANG ,  Siyoung KOH ,  Bonseung GOO ,  Junho IM ,  Dongwan KIM ,  Minsung KIM ,  Jisoo IM

IPC: G21K1/06

Abstract: A reflector for generating neutral beams, the reflector includes a plurality of reflective plates Ion beams from an ion source collide against each of the plurality of reflective plates. The plurality of reflective plates reflect the ion beams and convert the ion beams into neutral beams. A coupling portion disposed between the plurality of reflective plates. Each of the plurality of reflective plates comprises a first surface, a second surface disposed on a first end of the first surface, and a third surface disposed on a second end of the first surface that is opposite to the first end.

公开(公告)号：US20240392426A1

公开(公告)日：2024-11-28

申请号：US18430308

申请日：2024-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younseon WANG ,  Jeonghoon NAM ,  Youngkwon KIM ,  Hyunseo CHOI ,  Keonwoo KIM ,  Dougyong SUNG ,  Junho IM

IPC: C23C8/36 ,  C23C8/80 ,  C23C16/44 ,  H01J37/32

Abstract: A method of surface treatment, includes: providing a component in a first process chamber; generating fluorine plasma with a remote plasma source connected to the first process chamber; and forming a protective layer on a surface of the component by providing the fluorine plasma to the first process chamber, wherein the protective layer comprises magnesium fluoride, wherein a magnesium content of the component is about 0.5 wt % to about 5.5 wt %, and wherein a thickness of the protective layer is about 100 nm to about 300 nm.

公开(公告)号：US20250140509A1

公开(公告)日：2025-05-01

申请号：US18631735

申请日：2024-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwan KIM ,  Minsung KIM ,  Youngseok SONG ,  Jisoo IM ,  Kanghee KIM ,  Younseon WANG ,  Junho IM

IPC: H01J37/02 ,  H01J37/305

Abstract: An ion neutralization module comprising a reflector configured to neutralize an ion, a frame configured to support the reflector, and a conductive adhesive between the reflector and the frame to attach the reflector to the frame.

公开(公告)号：US20230333467A1

公开(公告)日：2023-10-19

申请号：US17964376

申请日：2022-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghwan KIM ,  Kyungwon KANG ,  Dongwook KIM ,  Seungjoon SONG ,  Seok HEO ,  Younseon WANG ,  Dasom LEE

IPC: G03F7/00 ,  G03F7/30

CPC classification number: G03F7/0025 ,  G03F7/3021

Abstract: A spin coater may include a spin chuck, a nozzle, a first temperature controller and a second temperature controller. The spin chuck may be configured make contact with a central portion of a lower surface of a substrate and may be configured to rotate the substrate when photoresist is on the substrate. The nozzle may be arranged over a central portion of the spin chuck and configured to provide a central portion of an upper surface of the substrate with photoresist. The first temperature controller may be configured to control a temperature in a first region of the spin chuck. The second temperature controller may be configured to control a temperature in a second region of the spin chuck.

公开(公告)号：US20230230840A1

公开(公告)日：2023-07-20

申请号：US17874766

申请日：2022-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyu LEE ,  Songyun KANG ,  Hiroshi SASAKI ,  Younseon WANG

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01J37/32449 ,  H01J2237/334

Abstract: A method of fabricating a semiconductor device comprises forming a mold layer on a substrate, forming a hardmask layer on the mold layer such that a portion of the mold layer is exposed, and using the hardmask layer to perform on the mold layer a cryogenic etching process. The cryogenic etching process includes supplying a chamber with a process gas including first and second process gases, and generating a plasma from the process gas. Radicals of the first process gas etch the exposed portion of the mold layer. Ammonium salt is produced based on the radicals etching the exposed portion of the mold layer. The second process gas includes an R—OH compound. The R is hydrogen, a C1 to C5 alkyl group, a C2 to C6 alkenyl group, a C2 to C6 alkynyl group, or a phenyl group. The second process gas reduces a production rate of the ammonium salt.