公开(公告)号：US20050257747A1

公开(公告)日：2005-11-24

申请号：US11192047

申请日：2005-07-29

申请人： Satoshi Wakabayashi ,  Shinya Okabe ,  Seishi Murakami ,  Masato Morishima ,  Kunihiro Tada

发明人： Satoshi Wakabayashi ,  Shinya Okabe ,  Seishi Murakami ,  Masato Morishima ,  Kunihiro Tada

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/285 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/4581 ,  C23C16/46 ,  H01L21/28556

摘要： A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.

摘要翻译： 工作台装置设置在用于半导体工艺的成膜处理容器内部。 工作台装置包括工作台，其包括顶表面以将目标基板放置在其上，以及从顶表面向下延伸的侧表面，以及设置在工作台中并构造成通过顶表面加热基板的加热器。 CVD预涂层覆盖工作台的顶表面和侧表面。 预涂层的厚度不小于基本上饱和来自加热器的加热并从工作台的顶表面和侧表面辐射的辐射热量的厚度。

公开(公告)号：US20060127601A1

公开(公告)日：2006-06-15

申请号：US11350799

申请日：2006-02-10

申请人： Seishi Murakami ,  Masato Morishima ,  Kensaku Narushima

发明人： Seishi Murakami ,  Masato Morishima ,  Kensaku Narushima

IPC分类号： H05H1/24

CPC分类号： H01L21/28518 ,  C23C16/08 ,  C23C16/56

摘要： A titanium silicide film is formed on an Si wafer. At first, a plasma process using an RF is performed on the Si wafer. Then, a Ti-containing source gas is supplied onto the Si wafer processed by the plasma process and plasma is generated to form a Ti film. At this time, the Ti silicide film is formed by a reaction of the Ti film with Si of the Si wafer. The plasma process is performed on the Si wafer while the Si wafer is supplied with a DC bias voltage having an absolute value of 200V or more.

摘要翻译： 在Si晶片上形成硅化钛膜。 首先，在Si晶片上进行使用RF的等离子体处理。 然后，将含Ti的源气体供给到通过等离子体处理加工的Si晶片上，产生等离子体以形成Ti膜。 此时，通过Ti膜与Si晶片的Si的反应形成Ti硅化物膜。 在Si晶片上施加等离子体处理，而Si晶片被提供绝对值为200V以上的直流偏置电压。

公开(公告)号：US08106335B2

公开(公告)日：2012-01-31

申请号：US11631485

申请日：2005-07-01

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： H05B3/68

CPC分类号： C23C16/46 ,  C23C16/4586 ,  H01L21/67109 ,  H05B3/143

摘要： A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).

摘要翻译： 处理装置具有防止由于嵌入式加热器的加热而产生裂缝的放置台。 其上放置晶片（W）的放置台（32A）具有多个区域（32Aa，32Ab），使得多个加热器中的一个独立地嵌入在多个区域中的每个区域中。 嵌入在相邻区域的一个区域（32Aa）中的加热器（35Aa）具有在相邻区域的另一区域（32Ab）中延伸的部分（35Aa2），并且嵌入在相邻区域的另一区域（32Ab）中的加热器 相邻区域具有在一个区域（32Aa）中延伸的部分（35Ab2）。

公开(公告)号：US20080302781A1

公开(公告)日：2008-12-11

申请号：US11631485

申请日：2005-07-01

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： H05B3/68

CPC分类号： C23C16/46 ,  C23C16/4586 ,  H01L21/67109 ,  H05B3/143

摘要： A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).

摘要翻译： 处理装置具有防止由于嵌入式加热器的加热而产生裂缝的放置台。 其上放置晶片（W）的放置台（32A）具有多个区域（32Aa，32Ab），使得多个加热器中的一个独立地嵌入在多个区域中的每个区域中。 嵌入在相邻区域的一个区域（32Aa）中的加热器（35Aa）具有在相邻区域的另一区域（32Ab）中延伸的部分（35Aa2），并且嵌入在相邻区域的另一区域（32Ab）中的加热器 相邻区域具有在一个区域（32Aa）中延伸的部分（35Ab2）。

公开(公告)号：US20060231032A1

公开(公告)日：2006-10-19

申请号：US11320535

申请日：2005-12-29

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： C23C16/00

CPC分类号： C23C16/5096 ,  H01L21/28556 ,  H01L21/76841

摘要： The object of the present invention is to provide a plasma chemical vapor deposition method and apparatus capable of preventing local electric discharge at the peripheral portion of the susceptor. Prior to the film formation, a gas is supplied into an evacuated chamber, and a substrate is supported on substrate support pins, which is arranged in the susceptor and are in their elevated position, so that the substrate is preheated; thereafter the supply of the gas is stopped, the chamber is evacuated, and the substrate support pins are lowered so that the substrate is placed on the susceptor; and thereafter a gas is supplied into the chamber and the substrate is further preheated. Thereafter, plasma is generated in the chamber, and the film-forming gas is supplied into the chamber, to form a film on the substrate.

摘要翻译： 本发明的目的是提供一种等离子体化学气相沉积方法和装置，其能够防止基座的周边部分的局部放电。 在成膜之前，将气体供应到真空室中，并且将基板支撑在设置在基座中并处于其升高位置的基板支撑销上，使得基板被预热; 然后停止供应气体，将室抽真空，并且将基板支撑销降低，使得基板放置在基座上; 然后将气体供应到室中，并且进一步预热基板。 此后，在室中产生等离子体，并且将成膜气体供应到室中，以在基板上形成膜。

公开(公告)号：US20080057344A1

公开(公告)日：2008-03-06

申请号：US10584642

申请日：2004-12-27

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： B32B33/00 ,  B05C11/10 ,  C23C16/34

CPC分类号： H01L21/76846 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/7687 ,  H01L2221/1078

摘要： Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.

摘要翻译： 公开了通过四氯化钛和氨的反应在基板上形成氮化钛膜的方法，同时使下层的腐蚀最小化。 通过在供给受限区域中使四氯化钛和氨彼此反应而在底物上形成第一氮化钛层，同时使下层的腐蚀最小化。 此后，在反应限制区域的第一氮化钛层上形成第二氮化钛层，同时实现良好的阶梯覆盖。

公开(公告)号：US5709757A

公开(公告)日：1998-01-20

申请号：US518980

申请日：1995-08-24

申请人： Tatsuo Hatano ,  Seishi Murakami ,  Kunihiro Tada

发明人： Tatsuo Hatano ,  Seishi Murakami ,  Kunihiro Tada

IPC分类号： H01L21/302 ,  B08B7/00 ,  C23C16/44 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  B08B3/10

CPC分类号： H01L21/67028 ,  B08B7/00 ,  C23C16/4405 ,  Y10S438/905

摘要： A film forming apparatus having a dry cleaning function comprises a process chamber for containing an object to be processed, a process gas supply system for introducing into the process chamber a process gas for forming one of a metal film or a metal compound film on the object, a heating device for depositing a component of the process gas on the object, thereby forming a film, a cleaning gas supply system for introducing into the process chamber a cleaning gas containing nitrogen trichloride or a fluoride such as chlorine trifluoride or nitrogen trifluoride for cleaning one of a metal or a metal compound adhering to an inner part of the process chamber due to the film formation, and an after-treatment gas supply system for introducing into the process chamber a cleaning after-treatment gas containing an alcohol.

摘要翻译： 具有干洗功能的成膜装置包括用于容纳待处理物体的处理室，将处理室内引入用于在物体上形成金属膜或金属化合物膜之一的处理气体的处理气体供给系统 用于将处理气体的成分沉积在物体上，从而形成膜的加热装置，用于将含有三氯化氮或氟化物如三氟化氯或三氟化氮的清洁气体引入处理室的清洁气体供给系统用于清洁 由于成膜而附着在处理室的内部的金属或金属化合物之一，以及用于将含有醇的清洁后处理气体引入处理室的后处理气体供给系统。

公开(公告)号：US20100162956A1

公开(公告)日：2010-07-01

申请号：US11989936

申请日：2006-08-04

申请人： Seishi Murakami ,  Kei Ogose

发明人： Seishi Murakami ,  Kei Ogose

IPC分类号： H01L21/683 ,  C23C16/00 ,  C23C16/46 ,  H01L21/477

CPC分类号： C23C16/4586 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/68735 ,  H01L21/68742

摘要： Disclosed is a susceptor which achieves uniform temperature distribution of a wafer placed on the susceptor, and also disclosed is a substrate processing apparatus provided with the susceptor. An annular recess 12a is formed in an intermediate portion between the central portion and the peripheral portion of a wafer support surface of the susceptor 12. Due to the provision of the recess, the substrate heating effect by thermal radiation from the susceptor is suppressed in the intermediate portion. The geometrical dimension of the recess is determined taking the chamber internal pressure into consideration.

摘要翻译： 公开了一种基座，其实现了放置在基座上的晶片的均匀的温度分布，并且还公开了设置有基座的基板处理装置。 在基座12的晶片支撑表面的中心部分和周边部分之间的中间部分中形成环形凹部12a。由于设置凹部，所以抑制了来自基座的热辐射的基板加热效应 中间部分。 考虑到室内压力确定凹部的几何尺寸。

公开(公告)号：US5595606A

公开(公告)日：1997-01-21

申请号：US634372

申请日：1996-04-18

申请人： Yuichiro Fujikawa ,  Tatsuo Hatano ,  Seishi Murakami

发明人： Yuichiro Fujikawa ,  Tatsuo Hatano ,  Seishi Murakami

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45572

摘要： A shower head of a metal CVD apparatus has a raw gas passage and a reduction gas passage for independently and respectively supplying a raw gas and a reduction gas into a process chamber. The shower head includes upper, middle and lower blocks which are formed independently of each other. Each of the raw gas passage and the reduction gas passage is branched from the upper block to the lower block. A coolant passage is formed in the lower block near supply outlets of the raw gas and the reduction gas for cooling the supply outlets. A heater is arranged in the upper and middle blocks for heating the raw gas passage.

摘要翻译： 金属CVD装置的喷头具有原料气体通道和还原气体通道，用于分别将原料气体和还原气体分别供给到处理室中。 淋浴头包括彼此独立地形成的上部，中部和下部块。 原料气体通道和还原气体通道中的每一个从上部块分配到下部块。 在原料气体和还原气体的供给出口附近的下部块体中形成冷却剂通路，以冷却供给出口。 加热器布置在上部和中部块中，用于加热原料气体通道。

公开(公告)号：US5088697A

公开(公告)日：1992-02-18

申请号：US552897

申请日：1990-07-16

申请人： Seishi Murakami ,  Kozo Kai ,  Susumu Kato

发明人： Seishi Murakami ,  Kozo Kai ,  Susumu Kato

IPC分类号： C23C14/48 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23F4/00 ,  C30B25/10 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/324

CPC分类号： H01L21/67103 ,  C23C16/4585 ,  C23C16/481 ,  C30B25/10 ,  C30B25/14

摘要： A susceptor is located in a treating space of a CVD apparatus with a wafer placed in contact with a first surface of a susceptor. The susceptor is heated by a heating source to impart the heat to the wafer. A treating gas is supplied into a treating space and decomposed in a course of a reaction to form a film on the wafer. A guard ring is located on a second surface of the susceptor which is situated around the first surface of the susceptor. The guard ring and wafer are heated by the susceptor in the same way. The surface of the susceptor is substantially not exposed between the guard ring and the wafer and a temperature on the exposed surface of the guard ring and that on the exposed surface of the wafer are nearly equal to each other.

摘要翻译： 感受器位于CVD装置的处理空间中，其中晶片与基座的第一表面接触。 感受器由加热源加热以将热量传递给晶片。 将处理气体供应到处理空间中并在反应过程中分解，以在晶片上形成膜。 保护环位于基座的第二表面上，该基座位于基座的第一表面周围。 保护环和晶片以相同的方式被感受器加热。 基座的表面基本上不暴露在保护环和晶片之间，并且保护环的暴露表面上的温度和晶片的暴露表面上的温度几乎相等。