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    Threshold voltage calibration using reference pattern detection
    1.
    发明授权
    Threshold voltage calibration using reference pattern detection 有权
    使用参考图案检测的阈值电压校准

    公开(公告)号：US08971111B2

    公开(公告)日：2015-03-03

    申请号：US13900718

    申请日：2013-05-23

    Applicant: Seagate Technology LLC

    Inventor： Mai A. Ghaly ,  Rodney Virgil Bowman

    IPC: G11C11/34 ,  G11C16/34

    CPC classification number: G06F11/1008 ,  G06F11/1048 ,  G11C7/14 ,  G11C11/5628 ,  G11C16/3404 ,  G11C16/3495 ,  G11C29/021 ,  G11C29/028

    Abstract: A memory controller identifies a predominant type of error of a memory unit of solid state memory cells. An error type differential is calculated. The error type differential is a difference between a number of charge loss errors and a number of charge gain errors of the memory unit. A VT offset error differential is calculated. The VT offset error differential is a difference between a number of errors of the predominant type at a first VT offset and a number of errors of the predominant type at a second VT offset. A VT offset is determined using a ratio of the error type differential and the VT offset error differential.

    Abstract translation: 存储器控制器识别固态存储器单元的存储器单元的主要类型的误差。 计算误差类型差分。 误差类型差是电荷损失误差的数量与存储器单元的充电增益误差的数量之差。 计算VT偏移误差差。 VT偏移误差差是在第一VT偏移处的主要类型的错误的数量和在第二VT偏移处的主要类型的错误的数量之间的差。 使用误差类型差和VT偏移误差的比率来确定VT偏移。

    SWITCHABLY ACTIVATED HEAT TRANSFER WITH MAGNETIC FLUID
    2.
    发明申请
    SWITCHABLY ACTIVATED HEAT TRANSFER WITH MAGNETIC FLUID 有权
    具有磁性液体的切换激活热传递

    公开(公告)号：US20160216043A1

    公开(公告)日：2016-07-28

    申请号：US14606243

    申请日：2015-01-27

    Applicant: Seagate Technology LLC

    Inventor： Kevin Arthur Gomez ,  Jon Trantham ,  David Tetzlaff ,  Mai A. Ghaly

    IPC: F28D15/06 ,  F25B21/04 ,  F28F13/06

    CPC classification number: F28D15/06 ,  F25B21/00 ,  F25B21/02 ,  F25B2321/0022 ,  F25B2321/0212 ,  F28D15/04 ,  F28F13/06 ,  Y02B30/66

    Abstract: An apparatus includes a heat pipe with a fluid path. A first part of the fluid path is thermally coupled to a first region of a higher temperature and a second part of the fluid path thermally is coupled to a second region of a lower temperature. A difference between the higher temperature and the lower temperature induces a flow of a magnetic fluid in the fluid path. A switchable magnetic device is magnetically coupled to the fluid path. Activation of the switchable magnetic device reduces the flow of the magnetic fluid in the fluid path, which reduces heat transfer from the first region to the second region.

    Abstract translation: 一种装置包括具有流体路径的热管。 流体路径的第一部分热耦合到较高温度的第一区域，热流体路径的第二部分耦合到较低温度的第二区域。 较高温度和较低温度之间的差异引起流体路径中的磁性流体的流动。 可切换磁性装置磁耦合到流体路径。 可切换磁性装置的激活减少了流体路径中的磁性流体的流动，这减少了从第一区域到第二区域的热传递。

    THRESHOLD VOLTAGE CALIBRATION USING REFERENCE PATTERN DETECTION
    5.
    发明申请
    THRESHOLD VOLTAGE CALIBRATION USING REFERENCE PATTERN DETECTION 审中-公开
    使用参考图案检测的阈值电压校准

    公开(公告)号：US20150178148A1

    公开(公告)日：2015-06-25

    申请号：US14635127

    申请日：2015-03-02

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Mai A. Ghaly ,  Rodney Virgil Bowman

    IPC: G06F11/10

    CPC classification number: G06F11/1008 ,  G06F11/1048 ,  G11C7/14 ,  G11C11/5628 ,  G11C16/3404 ,  G11C16/3495 ,  G11C29/021 ,  G11C29/028

    Abstract: A memory controller identifies a predominant type of error of a memory unit of solid state memory cells. An error type differential is calculated. The error type differential is a difference between a number of charge loss errors and a number of charge gain errors of the memory unit. A VT offset error differential is calculated. The VT offset error differential is a difference between a number of errors of the predominant type at a first VT offset and a number of errors of the predominant type at a second VT offset. A VT offset is determined using a ratio of the error type differential and the VT offset error differential.

    Abstract translation: 存储器控制器识别固态存储器单元的存储器单元的主要类型的误差。 计算误差类型差分。 误差类型差是电荷损失误差的数量与存储器单元的充电增益误差的数量之差。 计算VT偏移误差差。 VT偏移误差差是在第一VT偏移处的主要类型的错误的数量和在第二VT偏移处的主要类型的错误的数量之间的差。 使用误差类型差和VT偏移误差的比率来确定VT偏移。

    RECOVERY OF INTERFACIAL DEFECTS IN MEMORY CELLS
    6.
    发明申请
    RECOVERY OF INTERFACIAL DEFECTS IN MEMORY CELLS 有权
    在记忆细胞中恢复界面缺陷

    公开(公告)号：US20140347936A1

    公开(公告)日：2014-11-27

    申请号：US13900723

    申请日：2013-05-23

    Applicant: Seagate Technology LLC

    Inventor： Mai A. Ghaly

    IPC: G11C29/04 ,  G11C16/16 ,  G11C16/10

    CPC classification number: G11C29/04 ,  G11C11/56 ,  G11C13/00 ,  G11C16/10 ,  G11C16/16 ,  G11C16/349 ,  G11C16/3495 ,  G11C29/42 ,  G11C29/50 ,  G11C2029/5002

    Abstract: A group of non-volatile, solid state memory cells are transferred from an active list that includes memory cells accessible to a host to a temporary list that includes memory cells temporarily inaccessible to the host. The memory cells included in the temporary list are maintained at a temperature that is substantially the same as or lower than that of memory cells included in the active list. The memory cells are transferred from the temporary list to the active list in response to satisfaction of a trigger condition.

    Abstract translation: 一组非易失性固态存储器单元从包括主机可访问的存储器单元的活动列表传送到临时列表，其包括暂时无法访问主机的存储器单元。 包括在临时列表中的存储单元被保持在与包括在活动列表中的存储器单元的温度基本相同或者更低的温度。 响应于触发条件的满足，存储器单元从临时列表传送到活动列表。

    DETERMINATION OF OPTIMUM THRESHOLD VOLTAGE TO READ DATA VALUES IN MEMORY CELLS
    7.
    发明申请
    DETERMINATION OF OPTIMUM THRESHOLD VOLTAGE TO READ DATA VALUES IN MEMORY CELLS 有权
    确定最佳阈值电压以读取存储器单元中的数据值

    公开(公告)号：US20140258796A1

    公开(公告)日：2014-09-11

    申请号：US13794716

    申请日：2013-03-11

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Mai A. Ghaly ,  Bruce Douglas Emo

    IPC: H03M13/15

    CPC classification number: G06F11/1008 ,  G01R31/3171 ,  G06F11/1048 ,  G11C7/14 ,  G11C16/3404 ,  G11C29/021 ,  G11C29/028

    Abstract: An adaptive search scheme leads to threshold voltages that have lower bit error rates over initial values. An initial reference voltage is used and data is measured for set steps in voltage about the initial value sufficient to fit a polynomial curve. A minimum is used to determine the lowest bit error rate and corresponding optimum threshold voltage. This voltage is adopted as the new threshold voltage for reading the given data.

    Abstract translation: 自适应搜索方案导致阈值电压与初始值相比具有较低的误码率。 使用初始参考电压，并且测量关于初始值的电压的设定步长的数据，以足以拟合多项式曲线。 最小值用于确定最低误码率和相应的最佳阈值电压。 该电压被用作读取给定数据的新阈值电压。

    Adaptive read error recovery for memory devices
    10.
    发明授权
    Adaptive read error recovery for memory devices 有权
    内存设备的自适应读取错误恢复

    公开(公告)号：US09378083B2

    公开(公告)日：2016-06-28

    申请号：US14096733

    申请日：2013-12-04

    Applicant: Seagate Technology LLC

    Inventor： Mai A. Ghaly ,  Ara Patapoutian

    IPC: G06F11/00 ,  G06F11/07 ,  G06F1/28 ,  G11C11/56

    CPC classification number: G06F11/0793 ,  G06F1/28 ,  G06F11/073 ,  G06F11/076 ,  G11C11/5642

    Abstract: An error of a solid-state non-volatile memory is detected. It is determined whether a type of the error is a first type of error. A voltage recovery process is bypassed based on whether the error is the first type of error. If it is determined that the error is a catastrophic error, the voltage error recovery process is bypassed. If it is determined that an offset of a threshold voltage is not greater than a predetermined value, the voltage error recovery process is bypassed.

    Abstract translation: 检测到固态非易失性存储器的错误。 确定错误的类型是否是第一种类型的错误。 基于误差是否是第一种类型的错误，绕过电压恢复过程。 如果确定错误是灾难性错误，则绕过电压错误恢复过程。 如果确定阈值电压的偏移不大于预定值，则旁路电压误差恢复处理。

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