公开(公告)号：US20130214271A1

公开(公告)日：2013-08-22

申请号：US13768233

申请日：2013-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinobu Asami ,  Riho Kataishi ,  Erumu Kikuchi

IPC: H01L29/20

CPC classification number: H01L29/267 ,  H01L29/20 ,  H01L29/7869 ,  H01L29/861 ,  H01L31/0328 ,  H01L31/074 ,  Y02E10/50

Abstract: An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2

公开(公告)号：US09748401B2

公开(公告)日：2017-08-29

申请号：US14547285

申请日：2014-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/40

CPC classification number: H01L29/7869 ,  H01L29/408

Abstract: Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1

公开(公告)号：US09601633B2

公开(公告)日：2017-03-21

申请号：US14330113

申请日：2014-07-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Inoue ,  Masashi Tsubuku ,  Suzunosuke Hiraishi ,  Junichiro Sakata ,  Erumu Kikuchi ,  Hiromichi Godo ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/417 ,  H01L29/24 ,  H01L31/032 ,  H01L31/18 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L31/032 ,  H01L31/18

Abstract: An oxide semiconductor layer in which “safe” traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable can be achieved. The oxide semiconductor layer exhibiting two kinds of modes in photoresponse characteristics has a photoelectric current value of 1 pA to 10 nA inclusive. When the average time τ1 until which carriers are captured by the “safe” traps is large enough, there are two kinds of modes in photoresponse characteristics, that is, a region where the current value falls rapidly and a region where the current value falls gradually, in the result of a change in photoelectric current over time.

公开(公告)号：US09577107B2

公开(公告)日：2017-02-21

申请号：US14208982

申请日：2014-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Takahisa Ishiyama ,  Masaki Koyama ,  Erumu Kikuchi ,  Takuya Hirohashi ,  Masashi Oota

IPC: H01L21/00 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02678 ,  H01L21/02686 ,  H01L29/66969

Abstract: To improve crystallinity of an oxide semiconductor. To provide a crystalline oxide semiconductor film in which a crystallized region extends to the interface with a base or the vicinity of the interface, and to provide a method for forming the oxide semiconductor film. An oxide semiconductor film containing indium, gallium, and zinc is formed, and the oxide semiconductor film is irradiated with an energy beam, thereby being heated. Note that the oxide semiconductor film includes a c-axis aligned crystal region or microcrystal.

Abstract translation: 为了改善氧化物半导体的结晶度。 提供结晶化区域延伸到与基底或界面附近的界面的结晶氧化物半导体膜，并提供形成氧化物半导体膜的方法。 形成含有铟，镓和锌的氧化物半导体膜，并用能量束照射氧化物半导体膜，由此被加热。 注意，氧化物半导体膜包括c轴取向的晶体区域或微晶体。

公开(公告)号：US20140319519A1

公开(公告)日：2014-10-30

申请号：US14330113

申请日：2014-07-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Inoue ,  Masashi Tsubuku ,  Suzunosuke Hiraishi ,  Junichiro Sakata ,  Erumu Kikuchi ,  Hiromichi Godo ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L31/18 ,  H01L29/24 ,  H01L31/032

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L31/032 ,  H01L31/18

Abstract: An oxide semiconductor layer in which “safe” traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable can be achieved. The oxide semiconductor layer exhibiting two kinds of modes in photoresponse characteristics has a photoelectric current value of 1 pA to 10 nA inclusive. When the average time τ1 until which carriers are captured by the “safe” traps is large enough, there are two kinds of modes in photoresponse characteristics, that is, a region where the current value falls rapidly and a region where the current value falls gradually, in the result of a change in photoelectric current over time.

Abstract translation: “安全”陷阱存在的氧化物半导体层表现出光响应特性的两种模式。 通过使用氧化物半导体层，可以实现将光劣化抑制到最小并且电特性稳定的晶体管。 在光响应特性中表现出两种模式的氧化物半导体层具有1pA至10nA的光电流值。 当通过“安全”陷阱捕获载流子的平均时间τ1足够大时，光响应特性即电流值急剧下降的区域和电流值逐渐下降的区域有两种模式 在光电流随时间变化的结果中。

公开(公告)号：US09159793B2

公开(公告)日：2015-10-13

申请号：US14323575

申请日：2014-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinobu Asami ,  Riho Kataishi ,  Erumu Kikuchi

IPC: H01L29/10 ,  H01L29/267 ,  H01L29/20 ,  H01L29/786 ,  H01L31/0328 ,  H01L31/074 ,  H01L29/861

CPC classification number: H01L29/267 ,  H01L29/20 ,  H01L29/7869 ,  H01L29/861 ,  H01L31/0328 ,  H01L31/074 ,  Y02E10/50

Abstract: An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2

Abstract translation: 提供具有p型导电性的氧化物半导体材料和使用氧化物半导体材料的半导体器件。 可以使用在二氧化钼和三氧化钼之间具有中间组成的含有氧化钼（MoOy（2

公开(公告)号：US08772770B2

公开(公告)日：2014-07-08

申请号：US13768233

申请日：2013-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinobu Asami ,  Riho Kataishi ,  Erumu Kikuchi

IPC: H01L29/10

CPC classification number: H01L29/267 ,  H01L29/20 ,  H01L29/7869 ,  H01L29/861 ,  H01L31/0328 ,  H01L31/074 ,  Y02E10/50

Abstract: An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2

Abstract translation: 提供具有p型导电性的氧化物半导体材料和使用氧化物半导体材料的半导体器件。 可以使用在二氧化钼和三氧化钼之间具有中间组成的含有氧化钼（MoOy（2