-
公开(公告)号：US20070169373A1
公开(公告)日：2007-07-26
申请号：US11624404
申请日：2007-01-18
申请人： Shigeki Aoki , Yuichi Sakai , Mitsuo Yamashita , Hiroshi Shinya
发明人： Shigeki Aoki , Yuichi Sakai , Mitsuo Yamashita , Hiroshi Shinya
CPC分类号： F26B3/20 , F26B9/103 , F26B21/001 , G03F7/168 , G03F7/40 , H01L21/67109 , H01L21/67178 , H01L21/67248 , H01L21/677 , H01L21/67748
摘要： A heat processing apparatus includes a heating plate configured to heat the substrate; a cover configured to surround a space above the heating plate; an exhaust gas flow forming mechanism configured to exhaust gas inside the cover to form exhaust gas flows within the space above the heating plate; a downflow forming mechanism configured to form downflows uniformly supplied onto an upper surface of the substrate placed on the heating plate; and a control mechanism configured to execute mode switching control between a mode arranged to heat the substrate while forming the downflows by the downflow forming mechanism and a mode arranged to heat the substrate while forming the exhaust gas flows by the exhaust gas flow forming mechanism.
摘要翻译： 热处理装置包括：加热板，其被配置为加热所述基板; 盖构造成围绕加热板上方的空间; 排气流动形成机构，其构造成在所述盖内排出气体，以在所述加热板上方的空间内形成废气流; 下降形成机构，其被配置为形成均匀地供给到放置在所述加热板上的所述基板的上表面上的下流; 以及控制机构，其被配置为在通过下流形成机构形成下流的同时，在布置成加热所述基板的模式之间执行模式切换控制，以及布置成在形成所述废气的同时由所述排气流动形成机构流动的模式。
-
公开(公告)号：US07980003B2
公开(公告)日：2011-07-19
申请号：US11624404
申请日：2007-01-18
申请人： Shigeki Aoki , Yuichi Sakai , Mitsuo Yamashita , Hiroshi Shinya
发明人： Shigeki Aoki , Yuichi Sakai , Mitsuo Yamashita , Hiroshi Shinya
IPC分类号： F26B3/001
CPC分类号： F26B3/20 , F26B9/103 , F26B21/001 , G03F7/168 , G03F7/40 , H01L21/67109 , H01L21/67178 , H01L21/67248 , H01L21/677 , H01L21/67748
摘要： A heat processing apparatus includes a heating plate configured to heat the substrate; a cover configured to surround a space above the heating plate; an exhaust gas flow forming mechanism configured to exhaust gas inside the cover to form exhaust gas flows within the space above the heating plate; a downflow forming mechanism configured to form downflows uniformly supplied onto an upper surface of the substrate placed on the heating plate; and a control mechanism configured to execute mode switching control between a mode arranged to heat the substrate while forming the downflows by the downflow forming mechanism and a mode arranged to heat the substrate while forming the exhaust gas flows by the exhaust gas flow forming mechanism.
摘要翻译： 热处理装置包括：加热板，其被配置为加热所述基板; 盖构造成围绕加热板上方的空间; 排气流动形成机构，其构造成在所述盖内排出气体，以在所述加热板上方的空间内形成废气流; 下降形成机构，其被配置为形成均匀地供给到放置在所述加热板上的所述基板的上表面上的下流; 以及控制机构，其被配置为在通过下流形成机构形成下流的同时，在布置成加热所述基板的模式之间执行模式切换控制，以及布置成在形成所述废气的同时由所述排气流动形成机构流动的模式。
-
公开(公告)号：US08782918B2
公开(公告)日：2014-07-22
申请号：US13155013
申请日：2011-06-07
申请人： Shigeki Aoki , Yuichi Sakai , Mitsuo Yamashita , Hiroshi Shinya
发明人： Shigeki Aoki , Yuichi Sakai , Mitsuo Yamashita , Hiroshi Shinya
IPC分类号： F26B3/20 , H01L21/677 , F26B21/00 , F26B9/10
CPC分类号： F26B3/20 , F26B9/103 , F26B21/001 , G03F7/168 , G03F7/40 , H01L21/67109 , H01L21/67178 , H01L21/67248 , H01L21/677 , H01L21/67748
摘要： A heat processing apparatus includes a heating plate configured to heat the substrate; a cover configured to surround a space above the heating plate; an exhaust gas flow forming mechanism configured to exhaust gas inside the cover to form exhaust gas flows within the space above the heating plate; a downflow forming mechanism configured to form downflows uniformly supplied onto an upper surface of the substrate placed on the heating plate; and a control mechanism configured to execute mode switching control between a mode arranged to heat the substrate while forming the downflows by the downflow forming mechanism and a mode arranged to heat the substrate while forming the exhaust gas flows by the exhaust gas flow forming mechanism.
摘要翻译： 热处理装置包括：加热板，其被配置为加热所述基板; 盖构造成围绕加热板上方的空间; 排气流动形成机构，其构造成在所述盖内排出气体，以在所述加热板上方的空间内形成废气流; 下降形成机构，其被配置为形成均匀地供给到放置在所述加热板上的所述基板的上表面上的下流; 以及控制机构，其被配置为在通过下流形成机构形成下流的同时，在布置成加热所述基板的模式之间执行模式切换控制，以及布置成在形成所述废气的同时由所述排气流动形成机构流动的模式。
-
公开(公告)号：US20110236845A1
公开(公告)日：2011-09-29
申请号：US13155013
申请日：2011-06-07
申请人： Shigeki AOKI , Yuichi Sakai , Mitsuo Yamashita , Hiroshi Shinya
发明人： Shigeki AOKI , Yuichi Sakai , Mitsuo Yamashita , Hiroshi Shinya
IPC分类号： F24J3/00
CPC分类号： F26B3/20 , F26B9/103 , F26B21/001 , G03F7/168 , G03F7/40 , H01L21/67109 , H01L21/67178 , H01L21/67248 , H01L21/677 , H01L21/67748
摘要： A heat processing apparatus includes a heating plate configured to heat the substrate; a cover configured to surround a space above the heating plate; an exhaust gas flow forming mechanism configured to exhaust gas inside the cover to form exhaust gas flows within the space above the heating plate; a downflow forming mechanism configured to form downflows uniformly supplied onto an upper surface of the substrate placed on the heating plate; and a control mechanism configured to execute mode switching control between a mode arranged to heat the substrate while forming the downflows by the downflow forming mechanism and a mode arranged to heat the substrate while forming the exhaust gas flows by the exhaust gas flow forming mechanism.
摘要翻译： 热处理装置包括：加热板，其被配置为加热所述基板; 盖构造成围绕加热板上方的空间; 排气流动形成机构，其构造成在所述盖内排出气体，以在所述加热板上方的空间内形成废气流; 下降形成机构，其被配置为形成均匀地供给到放置在所述加热板上的所述基板的上表面上的下流; 以及控制机构，其被配置为在通过下流形成机构形成下流的同时，在布置成加热所述基板的模式之间执行模式切换控制，以及布置成在形成所述废气的同时由所述排气流动形成机构流动的模式。
-
公开(公告)号：US08192796B2
公开(公告)日：2012-06-05
申请号：US12781867
申请日：2010-05-18
IPC分类号： B05D3/12
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
-
公开(公告)号：US07050710B2
公开(公告)日：2006-05-23
申请号：US10491432
申请日：2002-10-22
申请人： Hiroshi Shinya , Yasutaka Souma , Takahiro Kitano
发明人： Hiroshi Shinya , Yasutaka Souma , Takahiro Kitano
IPC分类号： F26B19/00
CPC分类号： H01L21/67109
摘要： A heat treatment apparatus configured to perform heat treatment on a wafer having a surface on which a coating film is formed, and includes: a holding member for holding the wafer almost horizontally; a chamber for housing the wafer held by the holding member; a hot plate having gas permeability and disposed above the wafer held by the holding member in the chamber so that the coating film formed on the wafer can be directly heated; and an exhaust port provided on the top face of the chamber and exhausting gas in the chamber. Gas generated from the coating film passes through the hot plate and is exhausted from the chamber. Accordingly, uniformity of a coating film is improved. As a result, CD uniformity may be improved, LER characteristics may be improved, and a smooth pattern side face may be obtained.
摘要翻译： 一种热处理设备，被配置为对具有形成有涂膜的表面的晶片进行热处理，并且包括：用于保持晶片几乎水平的保持构件; 用于容纳由保持构件保持的晶片的室; 具有透气性的热板，并且设置在由所述保持构件保持在所述室中的所述晶片上方，使得可以直接加热形成在所述晶片上的涂膜; 以及设置在所述室的顶面上并在所述室中排出气体的排气口。 从涂膜产生的气体通过热板并从室排出。 因此，涂膜的均匀性提高。 结果，可以提高CD均匀性，可以提高LER特性，并且可以获得平滑的图案侧面。
-
公开(公告)号：US06986214B2
公开(公告)日：2006-01-17
申请号：US10859088
申请日：2004-06-03
申请人： Tomohide Minami , Hiroshi Shinya , Takahiro Kitano
发明人： Tomohide Minami , Hiroshi Shinya , Takahiro Kitano
IPC分类号： F26B3/00
CPC分类号： H01L21/67109 , H01L21/67034 , Y10S134/902
摘要： A low-pressure dryer dries a substrate applied a coating solution thereon at low pressure. The dryer includes an airtight chamber installing a substrate table to place the substrate thereon; a diffuser plate, provided as facing the substrate placed on the substrate table with a gap, for discharging gas existing in the gap toward outside, the diffuser plate having a size almost the same as or larger than the substrate; a substrate-temperature adjuster, installed in the substrate table, for adjusting a temperature of the substrate; and a decompression mechanism for decompressing the airtight chamber. The diffuser plate has a temperature adjuster for making temperature adjustments to have a temperature difference between a first region and a second region of the diffuser plate, the first region facing a center region of the substrate, the second region being outside the first region and including a region facing an outer region of the substrate.
-
公开(公告)号：US07757626B2
公开(公告)日：2010-07-20
申请号：US11504581
申请日：2006-08-16
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
-
公开(公告)号：US20070048449A1
公开(公告)日：2007-03-01
申请号：US11504581
申请日：2006-08-16
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
-
公开(公告)号：US06957378B2
公开(公告)日：2005-10-18
申请号：US10162414
申请日：2002-06-03
申请人： Mitsuhiro Koga , Munehiro Yoshida , Hiroshi Shinya
发明人： Mitsuhiro Koga , Munehiro Yoshida , Hiroshi Shinya
IPC分类号： G06F11/10 , G11C7/24 , G11C11/4078 , G11C29/00
CPC分类号： G06F11/1032 , G11C7/24 , G11C11/4078
摘要： A semiconductor memory device is disclosed which comprises a cell array including a normal data section used for normal data write and read and a parity data section used for check data write and read, the check data being for execution of error check of data as read out of the normal data section, a data buffer for temporal stage of read data from the cell array and write data into the cell array, and an ECC circuit for generating the check data to be stored in the parity data section from write data as input during data writing, and for performing error check and correction of data read out of the normal section based on the data read out of the normal data section and the check data read out of said parity data section during data reading. N-bit parallel data transfer is performed between the data buffer and normal data section whereas m-bit parallel data transfer is done between the data buffer and external input/output terminals (where m and n are integers satisfying m
摘要翻译： 公开了一种半导体存储器件，其包括一个单元阵列，该单元阵列包括用于正常数据写入和读取的正常数据段和用于校验数据写入和读取的奇偶校验数据段，该校验数据用于执行读出数据的错误校验 正常数据部分的数据缓冲器，用于从单元阵列读取数据的时间阶段的数据缓冲器，并将数据写入单元阵列;以及ECC电路，用于从作为输入的写数据产生要存储在奇偶校验数据部分中的校验数据 数据写入，并且用于在数据读取期间，基于从正常数据部分读出的数据和从所述奇偶校验数据部分读出的检查数据，对从普通部分读出的数据执行错误检查和校正。 在数据缓冲器和正常数据部分之间执行N位并行数据传输，而在数据缓冲器和外部输入/输出端子之间进行m位并行数据传输（其中m和n是满足m
-
-
-
-
-
-
-
-
-
搜索结果
28 条记录 (耗时 0.027 秒)