公开(公告)号：US06317301B2

公开(公告)日：2001-11-13

申请号：US09116526

申请日：1998-07-16

申请人： Shun-ichi Narumi ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Katsuo Watanabe ,  Kazue Kudo ,  Moriaki Fuyama

发明人： Shun-ichi Narumi ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Katsuo Watanabe ,  Kazue Kudo ,  Moriaki Fuyama

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/40 ,  G11B5/4886 ,  G11B19/04 ,  G11B2005/3996

摘要： A magnetoresistive effect type reproducing head is formed by stacking a lower magnetic shield made of magnetic material, a lower inter-layer insulation film, a magnetoresistive effect type element for detecting a magnetic field by using a magnetoresistive effect, an upper inter-layer insulation film, and an upper magnetic shield made of magnetic material, on a substrate in this order, wherein the resistivity of at least one of the lower and upper magnetic shields is more than 200 &mgr;&OHgr;·cm.

摘要翻译： 磁阻效应型再现头通过堆叠由磁性材料制成的下磁屏蔽，下层绝缘膜，用于通过使用磁阻效应来检测磁场的磁阻效应型元件，上层绝缘膜 以及由磁性材料制成的上磁屏蔽，其中所述下磁屏蔽和上磁屏蔽中的至少一个的电阻率大于200μOMEGA·cm。

公开(公告)号：US06337784B2

公开(公告)日：2002-01-08

申请号：US09747935

申请日：2000-12-27

申请人： Shun-ichi Narumi ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Katsuo Watanabe ,  Kazue Kudo ,  Moriaki Fuyama

发明人： Shun-ichi Narumi ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Katsuo Watanabe ,  Kazue Kudo ,  Moriaki Fuyama

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/40 ,  G11B5/4886 ,  G11B19/04 ,  G11B2005/3996

摘要： A magnetoresistive effect type reproducing head is formed by stacking a lower magnetic shield made of magnetic material, a lower inter-layer insulation film, a magnetoresistive effect type element for detecting magnetic field by using a magnetoresistive effect, an upper inter-layer insulation film, and an upper magnetic shield made of magnetic material, on a substrate in this order, wherein a resistivity of at least one of the lower and upper magnetic shields is more than 200 &mgr;&OHgr;·cm.

摘要翻译： 磁阻效应型再现头通过堆叠由磁性材料制成的下磁屏蔽，下层绝缘膜，通过使用磁阻效应来检测磁场的磁阻效应型元件，上层绝缘膜， 以及由磁性材料制成的上磁屏蔽，其中，所述下磁屏蔽和上磁屏蔽中的至少一个的电阻率大于200μOMEGA·cm。

公开(公告)号：US06563677B2

公开(公告)日：2003-05-13

申请号：US10038615

申请日：2002-01-08

申请人： Shun-ichi Narumi ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Katsuo Watanabe ,  Kazue Kudo ,  Moriaki Fuyama

发明人： Shun-ichi Narumi ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Katsuo Watanabe ,  Kazue Kudo ,  Moriaki Fuyama

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/40 ,  G11B5/4886 ,  G11B19/04 ,  G11B2005/3996

摘要： A magnetoresistive effect type reproducing head includes a lower magnetic shield made of magnetic material, an upper magnetic shield made of magnetic material, a magnetoresistive effect type element formed between the lower magnetic shield layer and the upper magnetic shield layer, a lower inter-layer insulating film formed between the magnetoresistive effect type element and the lower magnetic shield, and an upper inter-layer insulation film formed between the magnetoresistive effect type element and the upper magnetic shield. At least one of the lower and upper magnetic shields includes a first magnetic layer made of a first material having first electric resistivity and a second magnetic layer made of a second material having second electric resistivity higher than the first electric resistivity.

公开(公告)号：US06385015B2

公开(公告)日：2002-05-07

申请号：US09853609

申请日：2001-05-14

申请人： Shun-ichi Narumi ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Katsuo Watanabe ,  Kazue Kudo ,  Moriaki Fuyama

发明人： Shun-ichi Narumi ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Katsuo Watanabe ,  Kazue Kudo ,  Moriaki Fuyama

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/40 ,  G11B5/4886 ,  G11B19/04 ,  G11B2005/3996

摘要： A magnetoresistive effect type reproducing head is formed by stacking a lower magnetic shield made of magnetic material, a lower inter-layer insulation film, a magnetoresistive effect type element for detecting magnetic field by using a magnetoresistive effect, an upper inter-layer insulation film, and an upper magnetic shield made of magnetic material, on a substrate in this order, wherein a resistivity of at least one of the lower and upper magnetic shields is more than 200 &mgr;&OHgr;·cm.

公开(公告)号：US06034847A

公开(公告)日：2000-03-07

申请号：US992089

申请日：1997-12-17

申请人： Matahiro Komuro ,  Tomohiro Okada ,  Masaaki Sano ,  Moriaki Fuyama ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Takashi Kawabe ,  Yohji Maruyama ,  Atsushi Nakamura ,  Miki Hara ,  Noboru Shimizu ,  Noboru Yoshida

发明人： Matahiro Komuro ,  Tomohiro Okada ,  Masaaki Sano ,  Moriaki Fuyama ,  Hiroshi Fukui ,  Katsumi Hoshino ,  Takashi Kawabe ,  Yohji Maruyama ,  Atsushi Nakamura ,  Miki Hara ,  Noboru Shimizu ,  Noboru Yoshida

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/60 ,  G11B5/147

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/312 ,  G11B5/3967 ,  G11B5/6005 ,  G11B2005/3996

摘要： In order to prevent degradation of the recording performance during radio frequency recording, and to provide a thin film magnetic head and a recording reproducing sectional pattern magnetic head which has a magnetic pole width less than 2 .mu.m and an ultra high density magnetic storage apparatus of 10 Gb/ in.sup.2 grade, a recording head is provided in which a lower part magnetic film serves as a shielding film of a reproducing selection, a non magnetic gap film is formed during formation of the upper part magnetic film and the lower part magnetic film, one part of the lower part magnetic film or the upper part magnetic film has a higher resistivity of more than 80 .mu..OMEGA.cm than other parts, the upper part magnetic film is formed by flame galvanizing, and a gap section of the lower part magnetic film or the upper part magnetic film has a convex shape.

摘要翻译： 为了防止在射频记录期间的记录性能的劣化，并且提供具有小于2μm的磁极宽度的薄膜磁头和记录再现部分图形磁头和超高密度磁存储装置 10Gb / in2级，提供了一种记录头，其中下部磁性膜用作再现选择的屏蔽膜，在形成上部磁性膜和下部磁性膜期间形成非磁隙膜， 下部磁性膜或上部磁性膜的一部分比其他部分具有高于80μm欧米伽cm的电阻率，上部磁性膜通过火焰镀锌形成，下部磁性膜的间隙部分 或上部磁性膜具有凸形状。

公开(公告)号：US08570689B2

公开(公告)日：2013-10-29

申请号：US12628577

申请日：2009-12-01

申请人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

发明人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3948 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08

摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.

摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。

公开(公告)号：US08514527B2

公开(公告)日：2013-08-20

申请号：US12955767

申请日：2010-11-29

申请人： Kojiro Komagaki ,  Katsumi Hoshino ,  Masashige Sato ,  Hiroyuki Hoshiya

发明人： Kojiro Komagaki ,  Katsumi Hoshino ,  Masashige Sato ,  Hiroyuki Hoshiya

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/132 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.

摘要翻译： 根据一个实施例，磁阻效应头包括具有被钉扎的磁化方向的磁性钉扎层，位于磁性钉扎层上方的自由磁性层，具有可自由变化的磁化方向的自由磁性层，以及 阻挡层，其包括定位在所述磁性被钉扎层和所述自由磁性层之间的绝缘体，其中所述磁性钉扎层和所述自由磁性层中的至少一个具有层状结构，所述层状结构包括晶体层，所述晶体层包括以下之一：CoFe 磁性层或CoFeB磁性层以及包含CoFeB和选自Ta，Hf，Zr和Nb的元素的非晶磁性层，其中所述晶体层位于比非晶磁性层更靠近隧道势垒层。 在另一个实施例中，磁数据存储系统包括上述磁阻效应头。

公开(公告)号：US20100142101A1

公开(公告)日：2010-06-10

申请号：US12628577

申请日：2009-12-01

申请人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

发明人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

IPC分类号： G11B5/33

CPC分类号： G11B5/3948 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08

摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.

摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。

公开(公告)号：US07440240B2

公开(公告)日：2008-10-21

申请号：US11102067

申请日：2005-04-08

申请人： Hiroyuki Hoshiya ,  Katsumi Hoshino ,  Masahiko Hatatani ,  Kenichi Meguro

发明人： Hiroyuki Hoshiya ,  Katsumi Hoshino ,  Masahiko Hatatani ,  Kenichi Meguro

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  G11B5/3903 ,  G11B5/3932

摘要： Embodiments of the invention provide a spin-valve type magnetic head that satisfies the requirements of both high read output and stability with narrow tracks. In one embodiment, a domain control film is formed on a magnetoresistive layered film in the same track width. A double closed flux path structure that uses three magnetic layers is employed with magnetic coupled structure in both ends of the track. The three magnetic layers are a soft magnetic free layer, a domain-stabilization ferromagnetic layer, and a soft magnetic anti-parallel layer.

摘要翻译： 本发明的实施例提供一种自旋阀式磁头，其满足窄读出输出和稳定性两个要求。 在一个实施例中，域控制膜以相同的轨道宽度形成在磁阻层叠膜上。 使用三个磁性层的双闭合磁通路径结构在磁道的两端采用磁耦合结构。 三个磁性层是软磁自由层，畴稳定铁磁层和软磁反平行层。

公开(公告)号：US20070091511A1

公开(公告)日：2007-04-26

申请号：US11584397

申请日：2006-10-19

申请人： Hiroyuki Hoshiya ,  Katsumi Hoshino ,  Kenichi Meguro ,  Yo Sato ,  Hiroyuki Katada

发明人： Hiroyuki Hoshiya ,  Katsumi Hoshino ,  Kenichi Meguro ,  Yo Sato ,  Hiroyuki Katada

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A spin-valve type magnetic head which has sufficiently high output is provided. In one embodiment, a structure in which high output coexists with high stability is achieved by letting a GMR-effect and a current-path-confinement effect manifest themselves at the same time in a GMR-screen layer consisting of a ferromagnetic metal spike-like part and a half-covering oxide layer.

摘要翻译： 提供具有足够高输出的自旋阀式磁头。 在一个实施例中，通过在由铁磁性金属尖状形成的GMR屏幕层中同时显现GMR效应和电流路径限制效应来实现高输出共存高稳定性的结构 半覆盖氧化层。