Abstract:
A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.
Abstract:
A magnetic head includes a magneto-resistance effect element in the form of a multilayer film, a pair of shields between which the magneto-resistance effect element is interposed in the lamination direction of the layers of the magneto-resistance effect element and each functioning as an electrode, a pair of side shields with one of said side shields on each side of the magneto-resistance effect element in the direction perpendicular to the lamination direction of the magneto-resistance effect element interposed between the pair of shields, the side shields magnetically coupled to either of the pair of shields, and an anisotropy-application layer disposed adjacent to the shield magnetically coupled to the pair of side shields. The pair of shields, the magneto-resistance effect element, and the pair of side shields are exposed on the air bearing surface facing a recording medium. The anisotropy-application layer is not exposed on the air bearing surface and is provided at a position away from the air bearing surface.
Abstract:
A magnetic domain wall motion element includes a wiring layer including a first ferromagnetic layer and configured to extend in a first direction, a second ferromagnetic layer, and a spacer layer sandwiched between the wiring layer and the second ferromagnetic layer. In any cross section of the wiring layer taken along a plane perpendicular to the first direction, a first thickness of the wiring layer at a center in a width direction is thinner than a second thickness of the wiring layer at a first outer. peripheral portion outside the center in the width direction.
Abstract:
A magnetic domain wall moving element according to an embodiment includes: a magnetic recording layer, a ferromagnetic layer, and a non-magnetic layer arranged between the magnetic recording layer and the ferromagnetic layer, wherein the ferromagnetic layer contains an additive element dispersed therein, and the additive element is one or more of H, He, Ne, Ar, Kr, Xe, N, C, Ag, Cu, Hg, Au, Pb, Zn, and Bi.
Abstract:
An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.
Abstract:
A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.
Abstract:
A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.
Abstract:
The present disclosure is directed to a spin current magnetization rotational element, a spin-orbit-torque magnetoresistance effect element, a magnetic memory, and a high-frequency magnetic element which can efficiently generate a pure spin current and reduce a reversal current density. The spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction which intersects the first direction, wherein the spin-orbit torque wiring includes at least one rare gas element of Ar, Kr, and Xe.
Abstract:
A multi reader head has a plurality of readers that are laminated via a gap layer(s), and each of the readers has a structure in which a current-perpendicular-to-plane (CPP) type of magneto-resistive effect element, where a current flows along the lamination direction, is interposed between a pair of shields that function as an electrode, respectively, from both sides in the lamination direction. The shields that are opposed from each other via the gap layer of the readers that are adjacent in the lamination direction by a distance that is not constant, but include a portion with a greater distance between the shields and another portion with a smaller distance between the shields are included. The portion with a greater distance between the shields is situated at a position away from the center on an air bearing surface opposing to a recording medium in the magneto-resistive effect element.