公开(公告)号：US09893236B2

公开(公告)日：2018-02-13

申请号：US14921734

申请日：2015-10-23

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael D. Craven ,  Steven P. DenBaars

IPC: H01L33/00 ,  H01L33/24 ,  C30B25/02 ,  C30B25/04 ,  C30B25/10 ,  C30B25/18 ,  C30B29/40 ,  C30B29/60 ,  H01L21/02 ,  H01L29/15 ,  H01L33/06 ,  H01L33/32 ,  H01L29/20

CPC classification number: H01L33/24 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

公开(公告)号：US20160043278A1

公开(公告)日：2016-02-11

申请号：US14921734

申请日：2015-10-23

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael D. Craven ,  Steven P. DenBaars

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/24 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

Abstract translation: 制造非极性a面GaN /（Al，B，In，Ga）N多量子阱（MQW）的方法。 a面MQW通过金属有机化学气相沉积（MOCVD）在适当的GaN /蓝宝石模板层上生长，阱宽度范围为20埃至70埃。 来自a-plane MQWs的室温光致发光（PL）发射能量遵循使用自适应泊松 - 薛定er（SCPS）计算建模的平方井趋势。 对于a面MQW，在52的量子阱宽度处获得最佳PL发射强度。