公开(公告)号：US20180040503A1

公开(公告)日：2018-02-08

申请号：US15660622

申请日：2017-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshiaki FUJISATO ,  Hiroaki ASHIZAWA ,  Taichi MONDEN ,  Yasushi FUJII ,  Yu NUNOSHIGE

IPC: H01L21/687

CPC classification number: H01L21/6875 ,  H01L21/67748 ,  H01L21/68714 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764

Abstract: There is provided a substrate mounting method of brining a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate, the protrusion amount being defined to protrude from the substrate-mounting surface. The method includes: after at least a portion of the substrate is brought into contact with the substrate-mounting surface, halting an operation of bringing the substrate close to the mounting table; and after the halting the operation of bringing the substrate close to the mounting table, resuming the operation of bringing the substrate close to the mounting table.

公开(公告)号：US20150110959A1

公开(公告)日：2015-04-23

申请号：US14516460

申请日：2014-10-16

Applicant: Tokyo Electron Limited

Inventor： Hiroaki ASHIZAWA ,  Misuzu SATO

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  C23C16/08

CPC classification number: C23C16/52 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45544

Abstract: A film forming method includes: forming a thin unit film on a target substrate by supplying processing gases sequentially and intermittently into a processing space, where the target substrate is placed, in a processing chamber of a film forming apparatus while purging the processing gases with a purge gas constantly supplied into the processing space; and repeating the forming of the thin unit film to form a film having a predetermined thickness on the target substrate. A flow rate of the purge gas supplied into the processing space is set such that the film is formed in a film forming mode in which the thin unit film is formed, irrespective of a pressure in the processing chamber.

Abstract translation: 一种成膜方法，包括：在目标基板上形成薄单位膜，通过将处理气体顺序地和间歇地供给到放置目标基板的处理空间中，在成膜设备的处理室中，同时用 净化气体不断地供应到处理空间中; 并重复形成薄单位膜以在靶基板上形成具有预定厚度的膜。 供给到处理空间中的吹扫气体的流量被设定为使得膜形成为薄膜形成模式，其中形成薄单位膜，而与处理室中的压力无关。

公开(公告)号：US20200063258A1

公开(公告)日：2020-02-27

申请号：US16545588

申请日：2019-08-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuyoshi TAKAHASHI ,  Noboru MIYAGAWA ,  Susumu ARIMA ,  Seokhyoung HONG ,  Hiroaki ASHIZAWA

IPC: C23C16/455 ,  C23C16/34

Abstract: A method of forming a TiSiN film having a desired film characteristic includes: forming a TiN film by executing an operation of supplying, into a process container in which a substrate is accommodated, a Ti-containing gas and a nitrogen-containing gas in this order a number of times X, X being an integer of 1 or more; and forming a SiN film by executing an operation of supplying, into the process container, a Si-containing gas and a nitrogen-containing gas in this order a number of times Y, Y being an integer of 1 or more, wherein forming a TiN film and forming a SiN film are executed in this order a number of times Z, Z being an integer of 1 or more, and wherein, in forming a SiN film, a flow rate of the Si-containing gas is controlled to be a flow rate determined according to the desired film characteristic.

公开(公告)号：US20140287585A1

公开(公告)日：2014-09-25

申请号：US14219141

申请日：2014-03-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki ASHIZAWA ,  Takaaki IWAI

IPC: H01L49/02

CPC classification number: H01L28/65 ,  C23C16/045 ,  C23C16/18 ,  C23C16/45553 ,  C23C18/1279 ,  H01L21/0228 ,  H01L21/76823 ,  H01L27/10852 ,  H01L28/90

Abstract: A ruthenium film formation method including: forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent.

Abstract translation: 一种钌膜形成方法，包括：在基板上形成氧化钌膜; 并将所述氧化钌膜还原成钌膜，其中，还原所述氧化钌膜至少包含含有氢的钌化合物气体作为还原剂。

公开(公告)号：US20240200193A1

公开(公告)日：2024-06-20

申请号：US18539187

申请日：2023-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki ASHIZAWA ,  Hirokazu UEDA

IPC: C23C16/56 ,  C23C16/40

CPC classification number: C23C16/56 ,  C23C16/405 ,  H01L21/02189

Abstract: A method of performing a cleaning to remove a deposition film deposited during a substrate processing, includes: forming a heating film on an upper surface of the deposition film before performing the cleaning by supplying a cleaning gas to the deposition film deposited on a surface of a device arranged in a space where the substrate processing is performed, wherein the heating film undergoes a temperature increase due to a reaction heat generated when being removed by a reaction with the cleaning gas; supplying the cleaning gas to the heating film to remove the heating film and heating the deposition film on a lower surface of the heating film by the temperature increase; and performing the cleaning by supplying the cleaning gas to the deposition film having an increased temperature due to the heating the deposition film, after the heating film is removed.

公开(公告)号：US20220157600A1

公开(公告)日：2022-05-19

申请号：US17594029

申请日：2020-03-26

Applicant: Tokyo Electron Limited

Inventor： Hiroaki ASHIZAWA ,  Hideo NAKAMURA ,  Yosuke SERIZAWA ,  Yoshikazu IDENO

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/34 ,  C23C16/46 ,  C23C16/458 ,  C23C16/52 ,  C23C16/455

Abstract: A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.

公开(公告)号：US20130115367A1

公开(公告)日：2013-05-09

申请号：US13661514

申请日：2012-10-26

Applicant: Tokyo Electron Limited

Inventor： Naotaka NORO ,  Hiroaki ASHIZAWA ,  Junya HARA ,  Takaaki IWAI

IPC: H01B13/00

CPC classification number: C23C16/40 ,  H01L28/65

Abstract: A method for forming a ruthenium oxide film includes: providing a substrate in a processing chamber; supplying a ruthenium compound having a structure of the following formula (1) in which two β-diketons and two groups selected among olefin, amine, nitril, and carbonyl are coordinate-bonded to Ru in a vapor state onto the substrate; supplying oxygen gas onto the substrate; and forming a ruthenium oxide film on the substrate by reaction between the ruthenium compound gas and the oxygen gas. where R1 and R2 indicate alkyl groups having a total carbon number of about 2 to 5, and R3 indicates a group selected among an olefin group, an amine group, a nitril group and a carbonyl group.

Abstract translation: 一种形成氧化钌膜的方法包括：在处理室中提供衬底; 提供具有下式（1）结构的钌化合物，其中两个β-二酮和选自烯烃，胺，腈和羰基的两个基团以蒸汽状态与Ru配位结合到基底上; 将氧气供应到所述基底上; 并且通过钌化合物气体和氧气之间的反应在基板上形成氧化钌膜。 其中R 1和R 2表示总碳数为约2至5的烷基，R 3表示选自烯烃基，胺基，硝基和羰基中的基团。