公开(公告)号：US20150368802A1

公开(公告)日：2015-12-24

申请号：US14747001

申请日：2015-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki YAMADA ,  Masato MORISHIMA ,  Kenji OUCHI ,  Taiki KATOU

IPC: C23C16/50 ,  C23C16/34 ,  C23C16/24 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/36 ,  C23C16/507 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L51/5256

Abstract: There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.

Abstract translation: 提供一种形成密封膜以密封形成在基板上的器件的方法，包括：提供包含含硅气体和含卤素元素的气体的混合气体或包含含硅气体和 含有具有比氮的电负性强的官能团作为第一混合气体的气体进入处理容器; 产生处理容器内的第一混合气体的等离子体; 以及使用由所述等离子体激活的所述第一混合气体形成第一密封膜以覆盖所述装置。

公开(公告)号：US20210325780A1

公开(公告)日：2021-10-21

申请号：US17273183

申请日：2019-08-22

Applicant: Tokyo Electron Limited

Inventor： Kazuki YAMADA ,  Kyohei KOIKE ,  Masatoshi YAMATO ,  Hidetami YAEGASHI

IPC: G03F7/004 ,  H01L21/027 ,  G03F7/16

Abstract: A method of producing a resist film includes: a laminating step of fabricating a workpiece by laminating the resist film on an etching target film; and an infiltration step of exposing the workpiece to a gas of a precursor containing a metal having a higher EUV light absorption rate than carbon to infiltrate the metal into the resist film.

公开(公告)号：US20220178031A1

公开(公告)日：2022-06-09

申请号：US17594371

申请日：2020-04-06

Applicant: Tokyo Electron Limited

Inventor： Michitaka AITA ,  Ken ITABASHI ,  Ryota IFUKU ,  Takaaki KATO ,  Kazuki YAMADA

IPC: C23C16/48 ,  C23C16/455 ,  C23C16/52 ,  C23C16/40

Abstract: A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.

公开(公告)号：US20230019943A1

公开(公告)日：2023-01-19

申请号：US17861566

申请日：2022-07-11

Applicant: Tokyo Electron Limited

Inventor： Hajime NAKABAYASHI ,  Tomohito YAMAJI ,  Kazuki YAMADA ,  Ryuichi ASAKO

IPC: G03F1/22 ,  H01L21/033

Abstract: A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.

公开(公告)号：US20180374695A1

公开(公告)日：2018-12-27

申请号：US16008392

申请日：2018-06-14

Applicant: Tokyo Electron Limited ,  TOKYO OHKA KOGYO CO., LTD.

Inventor： Kazuki YAMADA ,  Masatoshi YAMATO ,  Hidetami YAEGASHI ,  Yoshitaka KOMURO ,  Takehiro SESHIMO ,  Katsumi OHMORI

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/308

CPC classification number: H01L21/0273 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0279 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31058 ,  H01L21/31144

Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

公开(公告)号：US20180076030A1

公开(公告)日：2018-03-15

申请号：US15697355

申请日：2017-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki YAMADA ,  Masatoshi YAMATO ,  Ryota IFUKU ,  Shuji AZUMO ,  Takashi FUSE

IPC: H01L21/02 ,  C23C16/32

Abstract: There is provided a SiC film forming method for forming a SiC film on a workpiece, including: a first step of forming a carbon film on the workpiece; and a second step of exposing the carbon film to a silicon-containing gas and causing silicon to be combined into the carbon film.