摘要:
A susceptor for use in a deposition apparatus includes a recess in which a wafer is received, and a stress-reducing bumper disposed along the side of the recess. The stress-reducing bumper is of material having ductility at a relatively high temperature. Therefore, when the wafer contacts the stress-reducing bumper, such as may occur due to thermal expansion of the wafer during processing, the force of the impact on the wafer is minimized by an elastic deformation of the stress-reducing bumper. As a result, defects, such as slip dislocations at the outer peripheral edge of the wafer, are prevented.
摘要:
An apparatus for analyzing a substrate employing a copper decoration includes a bath having at least two receiving containers for receiving electrolytes, slots formed at insides of the receiving containers for receiving substrates to be analyzed in a direction that is normal to a bottom face of the bath, lower copper plates provided in the receiving containers, the lower copper plates making contact with entire rear faces of the substrates received in the receiving containers, upper copper plates provided in the receiving containers, each of the upper copper plates corresponding to a respective one of the lower copper plates, and separated from front faces of the substrates, and a power source connected to the upper copper plates and the lower copper plates for providing voltages to the same. A plurality of substrates may be simultaneously analyzed using one apparatus thereby greatly reducing an amount of time required for the analysis.
摘要:
An apparatus and method for detecting a surface status. The method includes generating first and second pulse sequences and irradiating the first and second pulse sequences into a given surface. Light from the first and second pulses may be scattered by the given surface and analyzed to determine the status of the given surface. The apparatus includes a device for generating pulses which contact a given surface at different incident angles. The light scattered from the pulses may be analyzed at a determining part to determine a status of the given surface. In another embodiment, the method includes generating first and second pulse sequences and adjusting a path of at least a portion of at least one of the first and second pulse sequences such that the first and second pulse sequences are incident upon a given surface at different incident angles.
摘要:
In a method for fabricating a semiconductor memory device and a semiconductor memory device fabricated by the method, the method includes forming a multi-layered dielectric structure including a first dielectric layer with an ion implantation layer and a second dielectric layer without an ion implantation layer, over a semiconductor substrate; forming nanocrystals in the first and second dielectric layers by diffusing ions of the ion implantation layer by thermally treating the multi-layered dielectric structure; and forming a gate electrode on the multi-layered dielectric structure.
摘要:
Disclosed is a semiconductor wafer and method of fabricating the same. The semiconductor wafer is comprised of a semiconductor layer formed on an insulation layer on a base substrate. The semiconductor layer includes a surface region organized in a first crystallographic orientation, and another surface region organized in a second crystallographic orientation. The performance of a semiconductor device with unit elements that use charges, which are activated in high mobility to the crystallographic orientation, as carriers is enhanced. The semiconductor wafer is completed by forming the semiconductor layer with the second crystallographic orientation on the plane of the first crystallographic orientation, growing an epitaxial layer, forming the insulation layer on the epitaxial layer, and then bonding the insulation layer to the base substrate.
摘要:
Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.
摘要:
A nonvolatile memory device includes a semiconductor substrate, a charge-trap structure disposed on the semiconductor substrate, which includes an insulating film and a plurality of carbon nanocrystals embedded in the insulating film, and a gate disposed on the charge-trap structure. The nonvolatile memory device may exhibit memory hysteresis characteristics with improved reliability.
摘要:
A semiconductor wafer including an identification indication is provided. The wafer includes a convex edge with an upper surface area and a lower surface area. The identification indication is in a marking region which is disposed on a lower side surface of the convex edge. The lower side surface has a wide region where the marking region is located. This wide region has a width that is wider than an upper side surface of the wafer and thus makes a cross-section of a side of the wafer asymmetrical. With the present invention, the entire top surface of the semiconductor wafer can be utilized for a semiconductor chip region and prevents manufacturing problems associated with the uneven nature of the identification indication when the identification is located on the top surface of the wafer.
摘要:
In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae: wherein R1, R2, R3, R4 and R5 are independently H or a C1-C5 alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, or wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron.
摘要:
Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.