公开(公告)号：US20170170047A1

公开(公告)日：2017-06-15

申请号：US15113299

申请日：2015-01-21

申请人： ULVAC, INC.

发明人： Toshiyuki NAKAMURA ,  Naoki MORIGUCHI ,  Ryuichiro KAMIMURA ,  Yamato OSADA ,  Tsuyoshi AIHARA

IPC分类号： H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/673

CPC分类号： H01L21/6833 ,  H01J37/32724 ,  H01J37/32733 ,  H01L21/67069 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67313 ,  H01L21/67333 ,  H01L21/6831 ,  H01L21/68771

摘要： A plasma treatment apparatus includes a wafer transfer tray having a first surface and a second surface opposite to the first surface and configured to hold a wafer on the first surface, a cooling unit configured to cool the wafer transfer tray, a conductive supporter configured to support the second surface of the wafer transfer tray, and a double-surface electrostatic attractor configured to electrostatically attract the wafer to the first surface of the wafer transfer tray and electrostatically attract the supporter to the second surface of the wafer transfer tray.

公开(公告)号：US20220344167A1

公开(公告)日：2022-10-27

申请号：US17728524

申请日：2022-04-25

申请人： ULVAC, Inc.

发明人： Taichi SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC分类号： H01L21/3065 ,  H01J37/32 ,  B81C1/00 ,  C23C14/34 ,  C23C14/02

摘要： An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

公开(公告)号：US20240304453A1

公开(公告)日：2024-09-12

申请号：US18665377

申请日：2024-05-15

申请人： ULVAC, INC.

发明人： TAICHI SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC分类号： H01L21/3065 ,  B81C1/00 ,  C23C14/02 ,  C23C14/34 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/30655 ,  B81C1/00531 ,  B81C1/00619 ,  C23C14/021 ,  C23C14/34 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/014 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342

摘要： The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming SixOyαz; wherein a is any one of F, Cl, H, and CkHl; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

公开(公告)号：US20230420220A1

公开(公告)日：2023-12-28

申请号：US18213228

申请日：2023-06-22

申请人： ULVAC, Inc.

发明人： Taichi SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC分类号： H01J37/32

CPC分类号： H01J37/32174 ,  H01J37/32541 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334

摘要： A plasma processing apparatus according to the invention includes a chamber, an inner electrode, an outer electrode, a plasma generating power source, and a gas introduction part. The plasma generating power source applies alternating-current power to the outer electrode. The outer electrode includes a first electrode, a second electrode, and a third electrode. The plasma generating power source includes a first high-frequency power source, a second high-frequency power source, and a power splitter. The first high-frequency power source applies alternating-current power having a first frequency λ1 to the first electrode and the second electrode. The second high-frequency power source applies alternating-current power having a second frequency λ2 to the third electrode. A relationship of λ1>λ2 is satisfied. The power splitter is configured to split the alternating-current power into the first electrode and the second electrode with a predetermined split ratio.