公开(公告)号：US10115786B2

公开(公告)日：2018-10-30

申请号：US15352551

申请日：2016-11-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku ,  Chen-Bin Lin

IPC: H01L49/02 ,  H01G11/24

Abstract: A capacitor includes: a bottom electrode; a middle electrode on the bottom electrode; a top electrode on the middle electrode; a first dielectric layer between the bottom electrode and the middle electrode; and a second dielectric layer between the middle electrode and the top electrode. Preferably, the second dielectric layer is disposed on at least a sidewall of the middle electrode to physically contact the first dielectrically, and the middle electrode includes a H-shape.

公开(公告)号：US10056493B2

公开(公告)日：2018-08-21

申请号：US15853875

申请日：2017-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Ding-Lung Chen ,  Chen-Bin Lin ,  Sanpo Wang ,  Chung-Yuan Lee ,  Chi-Fa Ku

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L29/78609 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a first dielectric layer covering on the oxide-semiconductor layer and the source/drain regions, a second gate between the two source/drain regions and partially covering the oxide-semiconductor layer, and a charge storage structure between the first gate electrode and the oxide-semiconductor layer.

公开(公告)号：US20170155861A1

公开(公告)日：2017-06-01

申请号：US14953411

申请日：2015-11-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： ZHIBIAO ZHOU ,  Chen-Bin Lin ,  Ding-Lung Chen

IPC: H04N5/378 ,  H04N5/225 ,  H04N9/04

CPC classification number: H04N5/374 ,  H01L27/14667 ,  H01L31/035218 ,  H04N5/3745 ,  H04N9/04

Abstract: An operating method of an image sensor includes the following steps. The image sensor includes at least one pixel unit. The pixel unit includes a photoelectric conversion unit, a first control unit, a capacitor unit, and a sensing unit. The photoelectric conversion unit includes a quantum film photoelectric conversion unit, and the first control unit includes an oxide semiconductor transistor. The capacitor unit is coupled to the first control unit, and the sensing unit is configured to sense signals at a sense point coupled between the first control unit and the sensing unit. The pixel unit is discharged before a readout operation. The capacitor unit is charged by electrons emitted from the photoelectric conversion unit when the photoelectric conversion unit is excited by light. Signals at the sense point are then sensed by the sensing unit.

公开(公告)号：US20170098712A1

公开(公告)日：2017-04-06

申请号：US14874546

申请日：2015-10-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhi-Biao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku ,  Chen-Bin Lin ,  Su Xing ,  Tien-Yu Hsieh

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/115 ,  H01L29/66 ,  H01L49/02

CPC classification number: H01L27/1052 ,  H01L27/108 ,  H01L27/115 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/66742 ,  H01L29/7869

Abstract: A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.

公开(公告)号：US20170084614A1

公开(公告)日：2017-03-23

申请号：US14856565

申请日：2015-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shao-Hui Wu ,  ZHIBIAO ZHOU ,  HAI BIAO YAO ,  Chi-Fa Ku ,  Chen-Bin Lin

IPC: H01L27/108 ,  H01L29/786

CPC classification number: H01L27/10832 ,  H01L27/10867 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: A memory cell includes a substrate, a deep trench (DT) capacitor formed in the substrate, at least an insulting layer formed on the substrate, and an oxide semiconductor field effect transistor (OS FET) device formed on the insulating layer. And more important, the OS FET device is electrically connected to the DT capacitor.

公开(公告)号：US09530834B1

公开(公告)日：2016-12-27

申请号：US14967344

申请日：2015-12-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku ,  Chen-Bin Lin

IPC: H01L29/94 ,  H01L49/02

CPC classification number: H01L28/91 ,  H01L28/92

Abstract: A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a patterned first conductive layer on the material layer, forming a first dielectric layer on the patterned first conductive layer; forming a second conductive layer and a cap layer on the first dielectric layer; removing part of the cap layer to form a spacer on the second conductive layer; and using the spacer to remove part of the second conductive layer for forming a trench above the patterned first conductive layer and fin-shaped structures adjacent to the trench.

Abstract translation: 公开了制造电容器的方法。 该方法包括以下步骤：提供材料层; 在所述材料层上形成图案化的第一导电层，在所述图案化的第一导电层上形成第一介电层; 在所述第一介电层上形成第二导电层和盖层; 去除所述盖层的一部分以在所述第二导电层上形成间隔物; 以及使用间隔件去除用于在图案化的第一导电层上方形成沟槽的第二导电层的一部分和与沟槽相邻的鳍状结构。

公开(公告)号：US09966428B2

公开(公告)日：2018-05-08

申请号：US14996244

申请日：2016-01-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku ,  Chen-Bin Lin

IPC: H01L49/02

CPC classification number: H01L28/91

Abstract: A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a first conductive layer, a first dielectric layer, and a second conductive layer on the material layer; patterning the first dielectric layer and the second conductive layer to form a patterned first dielectric layer and a middle electrode; forming a second dielectric layer on the first conductive layer and the middle electrode; removing part of the second dielectric layer to form a patterned second dielectric layer; forming a third conductive layer on the first conductive layer and the patterned second dielectric layer, wherein the third conductive layer contacts the first conductive layer directly; and removing part of the third conductive layer to expose part of the patterned second dielectric layer.

公开(公告)号：US20170256652A1

公开(公告)日：2017-09-07

申请号：US15059311

申请日：2016-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： ZHIBIAO ZHOU ,  Shao-Hui Wu ,  Chen-Bin Lin ,  Ding-Lung Chen ,  Chi-Fa Ku

IPC: H01L29/786 ,  H01L21/426 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/426 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78609 ,  H01L29/78648 ,  H01L29/7869

Abstract: An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, agate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.

公开(公告)号：US20170154887A1

公开(公告)日：2017-06-01

申请号：US15432165

申请日：2017-02-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhi-Biao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku ,  Chen-Bin Lin ,  Su Xing ,  Tien-Yu Hsieh

IPC: H01L27/105 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1052 ,  H01L27/108 ,  H01L27/115 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/66742 ,  H01L29/7869

Abstract: A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.

公开(公告)号：US20170125402A1

公开(公告)日：2017-05-04

申请号：US14956398

申请日：2015-12-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： ZHIBIAO ZHOU ,  Chen-Bin Lin ,  Su Xing ,  Chi-Chang Shuai ,  Chung-Yuan Lee

IPC: H01L27/06 ,  H01L29/861 ,  H01L49/02 ,  H01L29/22 ,  H01L29/06 ,  H01L23/535 ,  H01L29/10 ,  H01L29/24

CPC classification number: H01L27/0629 ,  H01L23/535 ,  H01L27/0727 ,  H01L28/00 ,  H01L28/40 ,  H01L29/0603 ,  H01L29/1079 ,  H01L29/22 ,  H01L29/24 ,  H01L29/861

Abstract: The present invention provides a semiconductor device including a semiconductor substrate, a first well, a second well, a gate electrode, an oxide semiconductor structure and a diode. The first well is disposed in the semiconductor substrate and has a first conductive type, and the second well is also disposed in the semiconductor substrate, adjacent to the first well, and has a second conductive type. The gate electrode is disposed on the first well. The oxide semiconductor structure is disposed on the semiconductor substrate and electrically connected to the second well. The diode is disposed between the first well and the second well.