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公开(公告)号：US6015918A
公开(公告)日：2000-01-18
申请号：US281731
申请日：1999-03-30
摘要： A Cu(hfac) allyl-derived ligand precursor has been provided. The ligand includes group consisting of alkyl, phenyl, trialkylsilane, trialkoxylsilane, halodialkylsilane, dihaloalkylsilane, trihalosilane, triphenylsilane, alkoxyl, halogen, chloroformate, cynanide, cycloalkyl, cycloalkylamine, alkyl ether, isocyanate, and pentafluorobenzene. Examples of the allyl-derived ligand precursors have proved to be stable at room temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursors, including a Cu(hfac)(allyltrimethylsilane) precursor.
摘要翻译： 已经提供了一种Cu（hfac）烯丙基衍生的配体前体。 配体包括由烷基，苯基，三烷基硅烷，三烷氧基硅烷，卤代烷基硅烷，二卤代烷基硅烷，三卤硅烷，三苯基硅烷，烷氧基，卤素，氯甲酸酯，环己烷，环烷基，环烷基胺，烷基醚，异氰酸酯和五氟苯组成的组。 已经证明烯丙基衍生的配体前体的实例在室温下是稳定的，并且在较高温度下具有足够的挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生高产率的上述前体，包括Cu（hfac）（烯丙基三甲基硅烷）前体的合成方法。
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公开(公告)号：US6090963A
公开(公告)日：2000-07-18
申请号：US281722
申请日：1999-03-30
CPC分类号： C23C16/18
摘要： A metal(hfac), alkene ligand precursor has been provided. The alkene ligand includes double bonded carbon atoms, with first and second bonds to the first carbon atom, and third and fourth bonds to the second carbon atom. The first, second, third, and fourth bonds are selected from a the group consisting of H, C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, and C.sub.1 to C.sub.8 alkoxyl. As a general class, these precursors are capable of high metal deposition rates and high volatility, despite being stable in the liquid phase at low temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described alkene ligand class of metal precursors.
摘要翻译： 已经提供了金属（hfac），烯烃配体前体。 烯属配体包括双键键合的碳原子，与第一个碳原子具有第一个和第二个键，第三个和第四个键连接到第二个碳原子。 第一，第二，第三和第四键选自H，C 1至C 8烷基，C 1至C 8卤代烷基和C 1至C 8烷氧基。 作为一般类别，尽管在低温下在液相中稳定，但这些前体能够具有高的金属沉积速率和高挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生上述烯属配体类金属前体的高产率的合成方法。
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公开(公告)号：US5994571A
公开(公告)日：1999-11-30
申请号：US215921
申请日：1998-12-18
摘要： A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, H, and C.sub.1 to C.sub.8 alkoxyl. One variation, the 2-methyl-1-butene ligand precursor has proved to be stable at room temperature, and extremely volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. Because of the volatility, the deposition rate of copper deposited with this precursor is very high. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译： 已经提供了具有取代的乙烯配体的Cu（hfac）前体。 取代的乙烯配体包括与选自C1至C8烷基，C1至C8卤代烷基，H和C1至C8烷氧基的分子的键。 一个变体，2-甲基-1-丁烯配体前体已被证明在室温下是稳定的，并且在较高温度下极易挥发。 沉积有该前体的铜具有低电阻率和高粘合特性。 由于挥发性，沉积有这种前体的铜的沉积速率非常高。 已经提供了产生高产率的上述前体的合成方法。
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4.发明授权Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films 有权用于铜金属薄膜化学气相沉积的取代的环烯烃新铜前体公开(公告)号：US06281377B1
公开(公告)日：2001-08-28
申请号：US09502425
申请日：2000-02-11
IPC分类号： C07F108
摘要： A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film includes formation of a volatile liquid having a chemical formula of (n-R-m-cyclohexene)Cu(I)(hfac) or (n-R-m-cyclopentene)Cu(I)(hfac), where n,m=1-6, and where R is a alkyl, such as methyl and ethyl.
摘要翻译： 形成铜金属薄膜的化学气相沉积挥发性铜前体的方法包括形成化学式为（nRm-环己烯）Cu（I）（hfac）或（nRm-环戊烯）Cu（I）的挥发性液体， （hfac），其中n，m = 1-6，其中R是烷基，例如甲基和乙基。
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公开(公告)号：US06669870B2
公开(公告)日：2003-12-30
申请号：US09820024
申请日：2001-03-28
IPC分类号： H01B102
CPC分类号： C23C16/18
摘要： A Cu(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译： 已经提供了具有取代的苯基乙炔配体的Cu（hfac）前体。 取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。 已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生高产率的上述前体的合成方法。
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公开(公告)号：US06245261B1
公开(公告)日：2001-06-12
申请号：US09210099
申请日：1998-12-11
IPC分类号： H01B102
CPC分类号： C23C16/18
摘要： A Cub(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译： 已经提供了具有取代的苯基乙炔配体的Cub（hfac）前体。 取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。 已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生高产率的上述前体的合成方法。
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7.发明授权Method of forming highly adhesive copper thin films on metal nitride substrates via CVD 失效通过CVD在金属氮化物衬底上形成高粘合性铜薄膜的方法公开(公告)号：US06576292B2
公开(公告)日：2003-06-10
申请号：US09929709
申请日：2001-08-13
IPC分类号： C23C1618
CPC分类号： C23C16/18 , C23C16/0281
摘要： A method of forming a highly adhesive copper thin film on a metal nitride substrate includes preparing a substrate having a metal nitride barrier layer formed on a portion thereof; heating the substrate in a chemical vapor deposition chamber to a temperature of between 160° C. to 250° C. for about one minute and simultaneously introducing a copper precursor into the reaction chamber at a very slow initial flow rate of between less than 0.1 ml/min, and simultaneously providing an initial high wet helium gas flow in the reaction chamber of greater than or equal to 5 sccm; reducing the wet helium gas flow in the reaction chamber to less than 5 sccm; and increasing the flow of copper precursor to between about 0.1 ml/min and 0.6 ml/min.
摘要翻译： 在金属氮化物衬底上形成高粘合性铜薄膜的方法包括制备在其一部分上形成有金属氮化物阻挡层的衬底; 将化学气相沉积室中的衬底加热至160℃至250℃的温度约1分钟，同时以非常慢的初始流速将铜前体引入反应室，其初始流速小于0.1ml / min，并且同时在反应室中提供大于或等于5sccm的初始高湿氦气流; 将反应室中的湿氦气流减少到小于5sccm; 并将铜前体的流量增加至约0.1ml / min至0.6ml / min。
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公开(公告)号：US07585788B2
公开(公告)日：2009-09-08
申请号：US11224549
申请日：2005-09-12
申请人： Wei-Wei Zhuang , Yoshi Ono , Sheng Teng Hsu , Tingkai Li
发明人： Wei-Wei Zhuang , Yoshi Ono , Sheng Teng Hsu , Tingkai Li
IPC分类号： H01L21/31
CPC分类号： H01L21/02156 , H01L21/02282 , H01L21/316
摘要： A method is provided for forming a rare earth element-doped silicon oxide (SiO2) precursor with nanocrystalline (nc) Si particles. In one aspect the method comprises: mixing Si particles into a first organic solvent, forming a first solution with a first boiling point; filtering the first solution to remove large Si particles; mixing a second organic solvent having a second boiling point, higher than the first boiling point, to the filtered first solution; and, fractionally distilling, forming a second solution of nc Si particles. The Si particles are formed by immersing a Si wafer into a third solution including hydrofluoric (HF) acid and alcohol, applying an electric bias, and forming a porous Si layer overlying the Si wafer. Then, the Si particles are mixed into the organic solvent by depositing the Si wafer into the first organic solvent, and ultrasonically removing the porous Si layer from the Si wafer.
摘要翻译： 提供了一种用于形成具有纳米晶体（nc）Si颗粒的稀土元素掺杂的氧化硅（SiO 2）前体的方法。 一方面，该方法包括：将Si颗粒混合到第一有机溶剂中，形成具有第一沸点的第一溶液; 过滤第一溶液以除去大的Si颗粒; 将具有高于第一沸点的第二沸点的第二有机溶剂与过滤的第一溶液混合; 并分馏，形成nc Si颗粒的第二溶液。 通过将Si晶片浸入包括氢氟酸（HF）酸和醇的第三溶液中，施加电偏压并形成覆盖Si晶片的多孔Si层，形成Si颗粒。 然后，通过将Si晶片沉积到第一有机溶剂中，将Si颗粒混入有机溶剂中，并从Si晶片超声波除去多孔Si层。
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公开(公告)号：US07320897B2
公开(公告)日：2008-01-22
申请号：US11090386
申请日：2005-03-23
申请人： Sheng Teng Hsu , Tingkai Li , Wei-Wei Zhuang
发明人： Sheng Teng Hsu , Tingkai Li , Wei-Wei Zhuang
IPC分类号： H01L21/66
CPC分类号： H01L33/08 , B82Y20/00 , H01L33/18 , H01L33/24 , H01L33/34 , H01L33/502 , Y10S977/834
摘要： A nanotip electroluminescence (EL) diode and a method are provided for fabricating said device. The method comprises: forming a plurality of Si nanotip diodes; forming a phosphor layer overlying the nanotip diode; and, forming a top electrode overlying the phosphor layer. The nanotip diodes are formed by: forming a Si substrate with a top surface; forming a Si p-well; forming an n+ layer of Si, having a thickness in the range of 30 to 300 nanometers (nm) overlying the Si p-well; forming a reactive ion etching (RIE)-induced polymer grass overlying the substrate top surface; using the RIE-induced polymer grass as a mask, etching areas of the substrate not covered by the mask; and, forming the nanotip diodes in areas of the substrate covered by the mask.
摘要翻译： 提供了一种纳米末端电致发光（EL）二极管和一种用于制造所述器件的方法。 该方法包括：形成多个Si纳米二极管; 形成覆盖所述纳米二极管的磷光体层; 并且形成覆盖磷光体层的顶部电极。 纳米二极管通过以下方式形成：形成具有顶表面的Si衬底; 形成Si对孔; 形成层叠Si层的厚度为30〜300纳米（nm）的Si的n +层; 形成覆盖在衬底顶表面上的反应离子蚀刻（RIE）诱导的聚合物草; 使用RIE诱导的聚合物草作为掩模，蚀刻未被掩模覆盖的基底的区域; 以及在由掩模覆盖的衬底的区域中形成纳米二极管二极管。
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10.发明授权公开(公告)号：US07029982B1
公开(公告)日：2006-04-18
申请号：US10971387
申请日：2004-10-21
申请人： Wei-Wei Zhuang , David R. Evans , Fengyan Zhang , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , David R. Evans , Fengyan Zhang , Sheng Teng Hsu
IPC分类号： H01L21/20
CPC分类号： H01L45/1608 , C23C18/1216 , C23C18/1225 , C23C18/1283 , C23C18/1295 , H01L21/31691 , H01L28/20 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： A method of fabricating a doped-PCMO thin film layer includes preparing a PCMO precursor solution having a transition metal additive therein; and spin-coating the doped-PCMO spin-coating solution onto a wafer.
摘要翻译： 制造掺杂PCMO薄膜层的方法包括制备其中具有过渡金属添加剂的PCMO前体溶液; 并将掺杂的PCMO旋涂溶液旋涂到晶片上。
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