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公开(公告)号：US6090963A
公开(公告)日：2000-07-18
申请号：US281722
申请日：1999-03-30
CPC分类号： C23C16/18
摘要： A metal(hfac), alkene ligand precursor has been provided. The alkene ligand includes double bonded carbon atoms, with first and second bonds to the first carbon atom, and third and fourth bonds to the second carbon atom. The first, second, third, and fourth bonds are selected from a the group consisting of H, C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, and C.sub.1 to C.sub.8 alkoxyl. As a general class, these precursors are capable of high metal deposition rates and high volatility, despite being stable in the liquid phase at low temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described alkene ligand class of metal precursors.
摘要翻译： 已经提供了金属（hfac），烯烃配体前体。 烯属配体包括双键键合的碳原子，与第一个碳原子具有第一个和第二个键，第三个和第四个键连接到第二个碳原子。 第一，第二，第三和第四键选自H，C 1至C 8烷基，C 1至C 8卤代烷基和C 1至C 8烷氧基。 作为一般类别，尽管在低温下在液相中稳定，但这些前体能够具有高的金属沉积速率和高挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生上述烯属配体类金属前体的高产率的合成方法。
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公开(公告)号：US5994571A
公开(公告)日：1999-11-30
申请号：US215921
申请日：1998-12-18
摘要： A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, H, and C.sub.1 to C.sub.8 alkoxyl. One variation, the 2-methyl-1-butene ligand precursor has proved to be stable at room temperature, and extremely volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. Because of the volatility, the deposition rate of copper deposited with this precursor is very high. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译： 已经提供了具有取代的乙烯配体的Cu（hfac）前体。 取代的乙烯配体包括与选自C1至C8烷基，C1至C8卤代烷基，H和C1至C8烷氧基的分子的键。 一个变体，2-甲基-1-丁烯配体前体已被证明在室温下是稳定的，并且在较高温度下极易挥发。 沉积有该前体的铜具有低电阻率和高粘合特性。 由于挥发性，沉积有这种前体的铜的沉积速率非常高。 已经提供了产生高产率的上述前体的合成方法。
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公开(公告)号：US6015918A
公开(公告)日：2000-01-18
申请号：US281731
申请日：1999-03-30
摘要： A Cu(hfac) allyl-derived ligand precursor has been provided. The ligand includes group consisting of alkyl, phenyl, trialkylsilane, trialkoxylsilane, halodialkylsilane, dihaloalkylsilane, trihalosilane, triphenylsilane, alkoxyl, halogen, chloroformate, cynanide, cycloalkyl, cycloalkylamine, alkyl ether, isocyanate, and pentafluorobenzene. Examples of the allyl-derived ligand precursors have proved to be stable at room temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursors, including a Cu(hfac)(allyltrimethylsilane) precursor.
摘要翻译： 已经提供了一种Cu（hfac）烯丙基衍生的配体前体。 配体包括由烷基，苯基，三烷基硅烷，三烷氧基硅烷，卤代烷基硅烷，二卤代烷基硅烷，三卤硅烷，三苯基硅烷，烷氧基，卤素，氯甲酸酯，环己烷，环烷基，环烷基胺，烷基醚，异氰酸酯和五氟苯组成的组。 已经证明烯丙基衍生的配体前体的实例在室温下是稳定的，并且在较高温度下具有足够的挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生高产率的上述前体，包括Cu（hfac）（烯丙基三甲基硅烷）前体的合成方法。
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4.发明授权Method of forming highly adhesive copper thin films on metal nitride substrates via CVD 失效通过CVD在金属氮化物衬底上形成高粘合性铜薄膜的方法公开(公告)号：US06576292B2
公开(公告)日：2003-06-10
申请号：US09929709
申请日：2001-08-13
IPC分类号： C23C1618
CPC分类号： C23C16/18 , C23C16/0281
摘要： A method of forming a highly adhesive copper thin film on a metal nitride substrate includes preparing a substrate having a metal nitride barrier layer formed on a portion thereof; heating the substrate in a chemical vapor deposition chamber to a temperature of between 160° C. to 250° C. for about one minute and simultaneously introducing a copper precursor into the reaction chamber at a very slow initial flow rate of between less than 0.1 ml/min, and simultaneously providing an initial high wet helium gas flow in the reaction chamber of greater than or equal to 5 sccm; reducing the wet helium gas flow in the reaction chamber to less than 5 sccm; and increasing the flow of copper precursor to between about 0.1 ml/min and 0.6 ml/min.
摘要翻译： 在金属氮化物衬底上形成高粘合性铜薄膜的方法包括制备在其一部分上形成有金属氮化物阻挡层的衬底; 将化学气相沉积室中的衬底加热至160℃至250℃的温度约1分钟，同时以非常慢的初始流速将铜前体引入反应室，其初始流速小于0.1ml / min，并且同时在反应室中提供大于或等于5sccm的初始高湿氦气流; 将反应室中的湿氦气流减少到小于5sccm; 并将铜前体的流量增加至约0.1ml / min至0.6ml / min。
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公开(公告)号：US06194310B1
公开(公告)日：2001-02-27
申请号：US09585680
申请日：2000-06-01
IPC分类号： H01L214763
CPC分类号： H01L21/76864 , H01L21/28556 , H01L2221/1078
摘要： A method of forming conducting diffusion barriers is provided. The method produces substantially amorphous conducting diffusion barriers by depositing materials with varying ratios of elements throughout the diffusion barrier. Diffusion barriers of metal nitride, metal silicon nitride, are deposited using CVD, PECVD, or ALCVD, by depositing material with a first ratio of elements and then depositing substantially identical material with a different ratio of elements. The actual elements used are the same, but the ratio is changed. By changing the ratio of the elements within the same diffusion barrier, density variations are produced, and the material is not able to form undesirable polycrystalline structures.
摘要翻译： 提供形成导电扩散阻挡层的方法。 该方法通过在整个扩散阻挡层中沉积具有不同比例的元素的材料来产生基本上非晶的导电扩散阻挡层。 使用CVD，PECVD或ALCVD沉积金属氮化物，金属氮化硅的扩散屏障，通过以第一比例的元素沉积材料，然后沉积具有不同比例元素的基本相同的材料。 使用的实际元素是相同的，但是比例是改变的。 通过改变相同扩散阻挡层内的元素的比例，产生密度变化，并且材料不能形成不期望的多晶结构。
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公开(公告)号：US06632731B2
公开(公告)日：2003-10-14
申请号：US09783760
申请日：2001-02-14
申请人： Yanjun Ma , David Russell Evans , Yoshi Ono , Sheng Teng Hsu
发明人： Yanjun Ma , David Russell Evans , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L213205
CPC分类号： H01L29/6659 , H01L21/28088 , H01L21/28097 , H01L21/76895 , H01L21/76897 , H01L21/82385 , H01L29/42376 , H01L29/4966 , H01L29/4975 , H01L29/66545
摘要： A method of fabricating a sub-micron MOS transistor includes preparing a substrate, including isolating an active region therein; depositing a gate oxide layer; depositing a first selective etchable layer over the gate oxide layer; depositing a second selective etchable layer over the first selective etchable layer; etching the structure to undercut the first selective etchable layer; implanting ions in the active region to form a source region and a drain region; depositing and planarizing the oxide; removing the remaining first selective etchable layer and the second selective etchable layer; depositing a gate electrode; and depositing oxide and metallizing the structure. A sub-micron MOS transistor includes a substrate; and an active region, including a gate region having a length of less than one micron; a source region including a LDD source region; and a drain region including a LDD drain region.
摘要翻译： 制造亚微米MOS晶体管的方法包括制备衬底，包括在其中分离有源区; 沉积栅氧化层; 在所述栅极氧化物层上沉积第一选择性可蚀刻层; 在第一选择性可蚀刻层上沉积第二选择性可蚀刻层; 蚀刻结构以切割第一选择性可蚀刻层; 在有源区中注入离子以形成源区和漏区; 沉积和平坦化氧化物; 去除剩余的第一选择性可蚀刻层和第二选择性可蚀刻层; 沉积栅电极; 并沉积氧化物并金属化该结构。 亚微米MOS晶体管包括基板; 和有源区，包括具有小于1微米长度的栅区; 源区域，包括LDD源区域; 以及包括LDD漏极区域的漏极区域
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公开(公告)号：US06506643B1
公开(公告)日：2003-01-14
申请号：US09330900
申请日：1999-06-11
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/91
摘要： A three-dimensional ferroelectric structure and fabrication method are provided. The ferroelectric capacitor structure permits immediate contact between a noble metal capacitor electrode and a transistor electrode. This direct connection minimizes process steps and electrical resistance between capacitor and transistor. A damascene capacitor electrode formation process makes the task of etching the noble metal less critical. Regardless of whether a noble metal capacitor electrode is used, the damascene formation process permits both larger, and more space efficient, capacitors. Further, the damascene capacitor formation process can be used to simultaneously form electrical interlevel interconnections to the transistor drain. Another variation of the invention provides for a dual damascene version of the ferroelectric capacitor.
摘要翻译： 提供了三维铁电结构和制造方法。 铁电电容器结构允许贵金属电容器电极和晶体管电极之间立即接触。 这种直接连接使工艺步骤和电容器和晶体管之间的电阻最小化。 大马士革电容器电极形成过程使得蚀刻贵金属的任务不太关键。 不管是否使用贵金属电容器电极，镶嵌形成工艺允许更大和更节省空间的电容器。 此外，镶嵌电容器形成工艺可以用于同时形成到晶体管漏极的电层间互连。 本发明的另一变型提供了一种双镶嵌型铁电电容器。
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8.发明授权Fabrication of a planar MOSFET with raised source/drain by chemical mechanical polishing and nitride replacement 失效通过化学机械抛光和氮化物替换制造具有升高的源极/漏极的平面MOSFET
公开(公告)号：US6133106A
公开(公告)日：2000-10-17
申请号：US28157
申请日：1998-02-23
IPC分类号： H01L29/78 , H01L21/28 , H01L21/3105 , H01L21/336 , H01L21/768 , H01L29/417 , H01L29/49 , H01L29/51 , H01L29/786 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28194 , H01L21/31053 , H01L21/76801 , H01L29/41733 , H01L29/41775 , H01L29/41783 , H01L29/4908 , H01L29/517 , H01L29/66545 , H01L29/66575 , H01L29/66772 , H01L29/78684 , H01L21/2807 , H01L21/28202 , H01L29/51 , H01L29/518 , H01L29/665
摘要： A method of fabricating a MOSFET includes: depositing an oxide layer on the planarized substrate; forming a silicon nitride island above a gate region in the substrate; building an oxide sidewall about the nitride island; forming a source region and a drain region in the substrate; removing the silicon nitride island, thereby leaving a void over the gate region; forming a gate dielectric over the gate region in the void; filling the void and the areas over the source region and drain region; planarizing the upper surface of the structure by chemical mechanical polishing; depositing a metal layer on the upper surface of the structure; and metallizing the structure to form electrodes in electrical contact with the source region, the gate region, and the drain region.
摘要翻译： 制造MOSFET的方法包括：在平坦化的衬底上沉积氧化物层; 在所述衬底中的栅极区域上方形成氮化硅岛; 围绕氮化物岛建立氧化物侧壁; 在衬底中形成源区和漏区; 去除氮化硅岛，从而在栅极区域上留下空隙; 在空隙中的栅极区域上形成栅极电介质; 填充空隙和源区域和漏区域上的区域; 通过化学机械抛光对结构的上表面进行平面化; 在结构的上表面上沉积金属层; 并且对所述结构进行金属化以形成与所述源极区域，所述栅极区域和所述漏极区域电接触的电极。
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9.发明授权Method of controlling the initial growth of CVD copper films by surface treatment of barrier metals films 有权通过表面处理阻挡金属膜来控制CVD铜膜的初始生长的方法公开(公告)号：US06720031B2
公开(公告)日：2004-04-13
申请号：US09978434
申请日：2001-10-16
申请人： Wei Pan , David Russell Evans , Sheng Teng Hsu
发明人： Wei Pan , David Russell Evans , Sheng Teng Hsu
IPC分类号： C23C1618
CPC分类号： C23C16/18 , C23C16/4485
摘要： A method of chemical vapor deposition (CVD) of copper films includes preparing a substrate, including forming structures thereon have a barrier metal exposed surface; placing the prepared substrate into a CVD chamber; heating the substrate to a temperature of between about 200° C. and 250° C.; introducing a water flow in a carrier gas for at least one minute; stopping the water flow; and starting the flow of copper precursor.
摘要翻译： 铜膜的化学气相沉积（CVD）方法包括制备其上具有阻挡金属暴露表面的形成结构的基底; 将制备的衬底放置在CVD室中; 将基底加热至约200℃至250℃之间的温度; 在载气中引入水流至少一分钟; 停止水流; 并开始铜前体的流动。
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公开(公告)号：US06410462B1
公开(公告)日：2002-06-25
申请号：US09569861
申请日：2000-05-12
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/31633
摘要： A method of producing a low-k interconnect dielectric material, using PECVD processes and readily available precursors to produce carbon-doped silicon oxide (SiOC). SiOC dielectric materials are produced using conventional silane based gas precursors, of silane and nitrous oxide, along with hydrocarbon gas. The use of methane and acetylene in combination with silane based gas precursors is provided. Methane produces network terminating species, specifically methyl, which replaces oxygen in an Si—O bond within a silicon dioxide network. This increases the volume, reduces the density and the dielectric constant of the material. Acetylene acts as a possible source of carbon and as a modifier, reducing or eliminating undesirable bridging species, such as carbene, or enhancing desireable network terminating species, such as methyl. Following implantation, the material is annealed to reduce the—OH and to potentially further lower the dielectric constant.
摘要翻译： 使用PECVD工艺和易于获得的前体产生碳掺杂氧化硅（SiOC）的低k互连电介质材料的制造方法。 使用常规的硅烷基气体前体，硅烷和一氧化二氮以及烃类气体制备SiOC电介质材料。 提供了与硅烷基气体前体组合使用甲烷和乙炔。 甲烷产生网络终止物质，特别是甲基，其替代二氧化硅网络内的Si-O键中的氧。 这增加了材料的体积，降低了密度和介电常数。 乙炔作为碳和作为改性剂的可能来源，减少或消除不需要的桥接物质，如卡宾，或增强所需的网络终止物质如甲基。 在植入之后，将材料退火以减少-OH并潜在地进一步降低介电常数。
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