公开(公告)号：US20210147220A1

公开(公告)日：2021-05-20

申请号：US17046918

申请日：2019-04-11

Applicant: WiSys Technology Foundation, Inc. ,  Wisconsin Alumni Research Foundation

Inventor： Gokul Gopalakrishnan ,  Paul Gregory Evans

IPC: B81C1/00 ,  B81B3/00

Abstract: Methods for forming stable, suspended nanomembranes are provided. Also provided are stable, suspended nanomembranes made using the methods and electronic devices that incorporate the stable, suspended nanomembranes as electronically active layers. The methods utilize stiction-aided nanomembrane flattening combined with ultraviolet (UV) radiation-induced adhesion enhancement.

公开(公告)号：US20210025074A1

公开(公告)日：2021-01-28

申请号：US17060585

申请日：2020-10-01

Applicant: Wisconsin Alumni Research Foundation

Inventor： Paul Gregory Evans ,  Thomas Francis Kuech ,  Susan Elizabeth Babcock ,  Mohammed Humed Yusuf ,  Yajin Chen

IPC: C30B1/02 ,  C30B29/22 ,  H01L21/02 ,  C30B29/32

Abstract: A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

公开(公告)号：US11879185B2

公开(公告)日：2024-01-23

申请号：US17544298

申请日：2021-12-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Rui Liu ,  Paul Gregory Evans ,  Donald E. Savage ,  Thomas Francis Kuech

IPC: C30B29/20 ,  C23C16/40 ,  C30B1/02

CPC classification number: C30B29/20 ,  C23C16/403 ,  C30B1/023

Abstract: Aluminum oxide (Al2O3) thin films having a high γ-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, γ-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the θ-Al2O3 polymorph phase.

公开(公告)号：US20190106805A1

公开(公告)日：2019-04-11

申请号：US15728595

申请日：2017-10-10

Applicant: Wisconsin Alumni Research Foundation

Inventor： Paul Gregory Evans ,  Thomas Francis Kuech ,  Susan Elizabeth Babcock ,  Mohammed Humed Yusuf ,  Yajin Chen

IPC: C30B1/02 ,  C30B29/22

Abstract: A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

公开(公告)号：US12074235B2

公开(公告)日：2024-08-27

申请号：US17015428

申请日：2020-09-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Paul Gregory Evans ,  Thomas Francis Kuech ,  Donald E. Savage ,  Yajin Chen ,  Samuel Marks

IPC: B32B9/00 ,  C01G31/02 ,  C23C14/08 ,  C23C14/35 ,  C23C14/58 ,  C30B28/02 ,  H01L31/0232 ,  H01L31/08 ,  B82Y30/00 ,  B82Y40/00 ,  C30B29/30

CPC classification number: H01L31/0232 ,  C01G31/02 ,  C23C14/088 ,  C23C14/35 ,  C23C14/5806 ,  C30B28/02 ,  H01L31/085 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2002/34 ,  C30B29/30

Abstract: Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.

公开(公告)号：US20230175169A1

公开(公告)日：2023-06-08

申请号：US17544298

申请日：2021-12-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Rui Liu ,  Paul Gregory Evans ,  Donald E. Savage

IPC: C30B29/20 ,  C30B1/02 ,  C23C16/40

CPC classification number: C30B29/20 ,  C30B1/023 ,  C23C16/403

Abstract: Aluminum oxide (Al2O3) thin films having a high γ-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, γ-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the θ-Al2O3 polymorph phase.

公开(公告)号：US11591710B2

公开(公告)日：2023-02-28

申请号：US17060585

申请日：2020-10-01

Applicant: Wisconsin Alumni Research Foundation

Inventor： Paul Gregory Evans ,  Thomas Francis Kuech ,  Susan Elizabeth Babcock ,  Mohammed Humed Yusuf ,  Yajin Chen

IPC: C30B1/02 ,  C30B29/22 ,  H01L21/02 ,  C30B29/32 ,  H01L29/66 ,  H01L21/28

Abstract: A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

公开(公告)号：US20210069999A1

公开(公告)日：2021-03-11

申请号：US17015428

申请日：2020-09-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Paul Gregory Evans ,  Thomas Francis Kuech ,  Donald E. Savage ,  Yajin Chen ,  Samuel Marks

IPC: B29D11/00 ,  C01G31/02 ,  H01L31/08 ,  H01L31/0232

Abstract: Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.