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    Methods of operating magnetic random access memory device using spin injection and related devices
    1.
    发明申请
    Methods of operating magnetic random access memory device using spin injection and related devices 有权
    使用自旋注入和相关器件操作磁性随机存取存储器件的方法

    公开(公告)号：US20060034117A1

    公开(公告)日：2006-02-16

    申请号：US11201495

    申请日：2005-08-11

    申请人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

    发明人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16

    摘要： Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.

    摘要翻译： 提供了用于操作包括在衬底上具有磁性隧道结结构的存储单元的磁性随机存取存储器件的方法。 特别地，可以通过磁性隧道结结构提供写入电流脉冲，并且可以通过磁性隧道结结构提供写入磁场脉冲。 此外，写入磁场脉冲的至少一部分可以相对于写入电流脉冲的至少一部分在时间上重叠，并且写入电流脉冲的至少一部分和/或至少一部分 写入磁场脉冲可能在时间上相对于另一个不重叠。 还讨论了相关设备。

    Methods of operating magnetic random access memory device using spin injection and related devices
    2.
    发明授权
    Methods of operating magnetic random access memory device using spin injection and related devices 有权
    使用自旋注入和相关器件操作磁性随机存取存储器件的方法

    公开(公告)号：US07164598B2

    公开(公告)日：2007-01-16

    申请号：US11201495

    申请日：2005-08-11

    申请人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

    发明人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

    IPC分类号： G11C11/00 ,  G11C11/15

    CPC分类号： G11C11/16

    摘要： Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.

    摘要翻译： 提供了用于操作包括在衬底上具有磁性隧道结结构的存储单元的磁性随机存取存储器件的方法。 特别地，可以通过磁性隧道结结构提供写入电流脉冲，并且可以通过磁性隧道结结构提供写入磁场脉冲。 此外，写入磁场脉冲的至少一部分可以相对于写入电流脉冲的至少一部分在时间上重叠，并且写入电流脉冲的至少一部分和/或至少一部分 写入磁场脉冲可能在时间上相对于另一个不重叠。 还讨论了相关设备。

    Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same
    3.
    发明授权
    Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same 失效
    磁性随机存取存储单元具有其上具有覆层的分割子数据线及其制造方法

    公开(公告)号：US07569401B2

    公开(公告)日：2009-08-04

    申请号：US12048082

    申请日：2008-03-13

    申请人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

    发明人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

    IPC分类号： H01L21/00

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/12

    摘要： Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

    摘要翻译： 磁性RAM单元具有由包覆层包围的分割的子数字线，并且提供其制造方法。 磁性RAM单元包括在半导体衬底上形成的第一和第二子数字线。 只有第一子数字线的底表面和外侧壁被第一覆层图案覆盖。 此外，仅第二子数字线的底表面和外侧壁被第二包层图案覆盖。 第一子数字线的外侧壁位于远离第二子数字线的位置，第二子数字线的外侧壁位于第一子数字线的远侧。 还提供了制造磁性RAM单元的方法。

    Magnetic Random Access Memory Cells Having Split Subdigit Lines Having Cladding Layers Thereon and Methods of Fabricating the Same
    4.
    发明申请
    Magnetic Random Access Memory Cells Having Split Subdigit Lines Having Cladding Layers Thereon and Methods of Fabricating the Same 失效
    磁性随机存取存储器单元分割具有包层的子数字线及其制作方法

    公开(公告)号：US20080160643A1

    公开(公告)日：2008-07-03

    申请号：US12048082

    申请日：2008-03-13

    申请人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

    发明人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

    IPC分类号： H01L43/12

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/12

    摘要： Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

    摘要翻译： 磁性RAM单元具有由包覆层包围的分割的子数字线，并且提供其制造方法。 磁性RAM单元包括在半导体衬底上形成的第一和第二子数字线。 只有第一子数字线的底表面和外侧壁被第一覆层图案覆盖。 此外，仅第二子数字线的底表面和外侧壁被第二包层图案覆盖。 第一子数字线的外侧壁位于远离第二子数字线的位置，第二子数字线的外侧壁位于第一子数字线的远侧。 还提供了制造磁性RAM单元的方法。

    Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same
    6.
    发明授权
    Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same 有权
    具有直径控制触点的多位相变随机存取存储器（PRAM）及其制造和编程方法

    公开(公告)号：US08119478B2

    公开(公告)日：2012-02-21

    申请号：US12640567

    申请日：2009-12-17

    申请人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

    发明人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

    IPC分类号： H01L21/336

    CPC分类号： H01L45/06 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

    摘要： A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.

    摘要翻译： 相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。 第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。 第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。 硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。 硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。

    MULTI-BIT PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM) WITH DIAMETER-CONTROLLED CONTACTS AND METHODS OF FABRICATING AND PROGRAMMING THE SAME
    8.
    发明申请
    MULTI-BIT PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM) WITH DIAMETER-CONTROLLED CONTACTS AND METHODS OF FABRICATING AND PROGRAMMING THE SAME 有权
    具有直径控制联系人的多位相变随机访问存储器（PRAM）及其制作和编程方法

    公开(公告)号：US20100090194A1

    公开(公告)日：2010-04-15

    申请号：US12640567

    申请日：2009-12-17

    申请人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

    发明人： Won-Cheol Jeong ,  Hyeong-Jun Kim ,  Se-Ho Lee ,  Jae-Hyun Park ,  Chang-Wook Jeong

    IPC分类号： H01L45/00

    CPC分类号： H01L45/06 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

    摘要： A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.

    摘要翻译： 相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。 第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。 第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。 硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。 硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。

    Phase change memory devices and their methods of fabrication
    10.
    发明申请
    Phase change memory devices and their methods of fabrication 有权

    公开(公告)号：US20060237756A1

    公开(公告)日：2006-10-26

    申请号：US11392310

    申请日：2006-03-28

    申请人： Jae-Hyun Park ,  Jae-Hee Oh ,  Se-Ho Lee ,  Won-Cheol Jeong

    发明人： Jae-Hyun Park ,  Jae-Hee Oh ,  Se-Ho Lee ,  Won-Cheol Jeong

    IPC分类号： H01L29/94

    CPC分类号： H01L45/144 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1666

    摘要： In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A hole penetrates the first interlayer insulating layer. A first and a second semiconductor pattern are sequentially stacked in a lower region of the hole. A cell electrode is provided on the second semiconductor pattern. The cell electrode has a lower surface than a top surface of the first interlayer insulating layer. A confined phase change material pattern fills the hole on the cell electrode. An upper electrode is disposed on the phase change material pattern. The phase change material pattern in the hole is self-aligned with the first and second semiconductor patterns by the hole. A method of fabricating the phase change memory device is also provided.