摘要:
An distance measurement apparatus includes a light source to emit irradiation light, circuitry to output, to the light source, a first current that changes in accordance of light-emission timing information defining at least turn-on timing of the light source, and a second current that does not change in accordance of the light-emission timing information, a sensor to detect reflection light reflected from an object irradiated with the irradiation light emitted from the light source. The circuitry calculates a distance to the object based on a detection amount of the reflection light detected by the sensor.
摘要:
A distance-measuring apparatus, a mobile object, a robot, a three-dimensional measuring device, a surveillance camera, and a distance-measuring method. The distance-measuring apparatus, a mobile object includes a light source to emit light, an imaging element to receive and photoelectrically convert the light into a plurality of electrical signals, and to obtain the electrical signals upon being sorted into a plurality of phase signals, and a computing unit to calculate distance to the object based on the phase signals. In the distance-measuring apparatus, a period of time during which the imaging element obtains the phase signals is different from a light emitting period of the light source in length. The distance-measuring method includes determining whether or not aliasing is present based on a light emitting period of the light source, a period of time during which the plurality of phase signals are obtained, and a result of the calculating.
摘要:
An input operation detection device to detect input operation input to an image includes a first and second imaging parts and a processor to detect input operation based on data acquired by the first and second imaging parts. The image is divided into first and second images. The optical axes of imaging optical systems of the first and second imaging parts intersect with the image at points on the same side as installation position sides of the corresponding imaging parts with respect to the center of the corresponding images.
摘要:
According to an aspect of the present invention, an input-operation detection device for detecting a user input operation performed on at least a portion of a displayed image includes; a light emitter that emits detection light, an imaging unit including an imaging optical system and an image sensor and configured to capture an image of at least one of the displayed image and the input operation, and a processing unit that detects position, at which the input operation is performed, or motion, by which the input operation is provided, based on a result of image capture output from the imaging unit. The position where optical axis of the imaging optical system intersects a display surface of the displayed image and center of the displayed image are on the same side relative to a position where the imaging unit is mounted.
摘要:
A display device includes a light source; a light deflector configured to deflect light emitted from the light source to scan as scanning light in a main scanning direction and a sub-scanning direction; a screen having a scanning area to be two-dimensionally scanned with the scanning light at a predetermined cycle, the scanning area having a first area and a second area that differ in position in the sub-scanning direction; a light receiver disposed on the screen, configured to detect the light scanning in each of the first area and the second area of the screen; and a control unit configured to adjust a position of the scanning light in the scanning area according to the number of scanning lines in each of the first area and the second area.
摘要:
An electrostatic latent image forming method for forming, on an image carrier, an electrostatic latent image that has a pattern where there are an irradiated area and a not-irradiated area in a mixed manner, the electrostatic latent image forming method comprises; adjusting an exposure condition of an irradiated area that is included in the irradiated area and is adjacent to the not-irradiated area so that an electric field intensity of an electrostatic latent image that corresponds to the not-irradiated area is increased so as to prevent adhesion of a developer, and irradiating the image carrier with light under the adjusted exposure condition.
摘要:
There is provided a semiconductor device. An n-type transistor is formed on a (551) surface of a silicon substrate. A silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 5 nm. A metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive). A barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship.
摘要:
A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.
摘要:
An imaging optical system, an imaging device, and a digital apparatus have a four lens construction with positive, negative, positive, and negative refractive powers. A surface position at the maximum effective diameter of the second lens element is located on the object side than a surface vertex thereof. The fourth lens element has an inflection point at a position other than the intersection of the optical axis and the fourth lens element. The optical system satisfies the following conditions. 0.7 72 ν4>50, and 0.55
摘要:
A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.