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    Method for manufacturing an electromagnetic conversion device and a displacement detector which uses an electromagnetic conversion device
    2.
    发明授权
    Method for manufacturing an electromagnetic conversion device and a displacement detector which uses an electromagnetic conversion device 失效
    一种使用电磁转换装置的电磁转换装置和位移检测器的制造方法

    公开(公告)号：US5551586A

    公开(公告)日：1996-09-03

    申请号：US293966

    申请日：1994-08-24

    申请人： Hirofumi Uenoyama ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Yoshimi Yoshino ,  Motofumi Suzuki

    发明人： Hirofumi Uenoyama ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Yoshimi Yoshino ,  Motofumi Suzuki

    IPC分类号： G01B7/00 ,  C23C28/00 ,  G01D5/14 ,  G01D5/16 ,  G01D5/18 ,  G01P3/487 ,  G01R33/09 ,  H01L27/22 ,  B44C1/22 ,  C23F1/00 ,  H01L21/00

    CPC分类号： G01D5/145 ,  B82Y25/00 ,  C23C28/00 ,  G01P3/487 ,  G01R33/093 ,  H01L27/22

    摘要： A method of manufacturing a magneto-electric conversion device having a large rate of change of magnetic resistance and which is easy to position with respect to a magnetized surface, and a moving subject displacement detector using a magneto-electric conversion device manufactured by that method. A magnet which rotates together with the rotation of a drive gear is magnetized in alternately differing north and south poles, arranged in an equal sized section from a center portion thereof. An IC chip is positioned opposite to and at a distance from the magnetized surface of the magnet. Magneto-electric conversion devices are located on the IC chip. These magneto-electric conversion devices are formed by repeated alternate depositions, onto a surface of a single-crystal silicon substrate, of magnetic cobalt films having a thickness of several to several tens of angstroms and non-magnetic copper films having a thickness of several to several tens of angstroms.

    摘要翻译： 一种制造磁阻变化率大且相对于磁化面容易定位的磁电转换装置的方法，以及使用该方法制造的磁电转换装置的移动体位移检测器。 与驱动齿轮的旋转一起旋转的磁体被磁化为交替不同的北极和南极，其中心部分以相同的尺寸设置。 IC芯片位于与磁体的磁化表面相对且距离磁化表面一定距离处。 磁电转换装置位于IC芯片上。 这些磁电转换装置通过重复交替沉积形成在单晶硅衬底的表面上，具有几个至几十埃厚度的磁性钴膜和非磁性铜膜，其厚度为几个至几十 几十埃。

    Magnetoresistive element and manufacturing method therefor
    3.
    发明授权
    Magnetoresistive element and manufacturing method therefor 失效
    磁阻元件及其制造方法

    公开(公告)号：US5471084A

    公开(公告)日：1995-11-28

    申请号：US94142

    申请日：1993-07-30

    申请人： Yasutoshi Suzuki ,  Kenichi Ao ,  Hirofumi Uenoyama ,  Hiroki Noguchi ,  Koji Eguchi ,  Ichiro Ito ,  Yoshimi Yoshino

    发明人： Yasutoshi Suzuki ,  Kenichi Ao ,  Hirofumi Uenoyama ,  Hiroki Noguchi ,  Koji Eguchi ,  Ichiro Ito ,  Yoshimi Yoshino

    IPC分类号： H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/08

    摘要： This invention relates to a magnetoresistive element used for a magnetic sensor, etc. A ferromagnetic magnetoresistive element thin film is formed so as to be electrically connected to and so as to overlap the upper end portion of an aluminum wiring metal on a substrate. Through using a vacuum heat treatment with a temperature between 350.degree. and 450.degree. C., a Ni--Al-based alloy is formed at the overlapping portion. Therefore, even when a surface protection film of silicon nitride is subsequently formed by plasma CVD on the substrate, the alloy prevents the nitriding of the upper end portion of the aluminum wiring metal. Accordingly, the surface can be protected from moisture by the silicon nitride film without increasing the contact resistance between the magnetoresistive element thin film and the wiring metal. Instead of the Ni--Al-based alloy, other conductive metals such as TiW, TiN, Ti, Zr, or the like may be used. Also, the surface protection film may be a multi-layered film having a first film containing no nitrogen, such as a silicon oxide film, and a second film of silicon nitride film formed on the first film.

    摘要翻译： PCT No.PCT / JP92 / 01581 Sec。 371日期：1993年7月30日 102（e）日期1993年7月30日PCT提交1992年12月3日PCT公布。 公开号WO93 / 11569 日本特许公报1993年6月10日。本发明涉及用于磁传感器等的磁阻元件。铁磁磁阻元件薄膜形成为与铝布线的上端部电连接并与其重叠 金属在基板上。 通过使用350〜450℃的真空热处理，在重叠部分形成Ni-Al系合金。 因此，即使在基板上随后通过等离子体CVD形成氮化硅的表面保护膜，合金也能防止铝布线金属的上端部的氮化。 因此，可以防止表面被氮化硅膜防止湿气，而不增加磁阻元件薄膜和布线金属之间的接触电阻。 可以使用TiW，TiN，Ti，Zr等其他导电性金属代替Ni-Al系合金。 此外，表面保护膜也可以是具有不含氮的第一膜的多层膜，例如氧化硅膜，以及形成在第一膜上的第二氮化硅膜。

    Method for fabricating a semiconductor acceleration sensor
    4.
    发明授权
    Method for fabricating a semiconductor acceleration sensor 失效
    半导体加速度传感器的制造方法

    公开(公告)号：US5851851A

    公开(公告)日：1998-12-22

    申请号：US399342

    申请日：1995-03-06

    申请人： Hirofumi Uenoyama ,  Masakazu Kanosue ,  Kenichi Ao ,  Yasutoshi Suzuki

    发明人： Hirofumi Uenoyama ,  Masakazu Kanosue ,  Kenichi Ao ,  Yasutoshi Suzuki

    IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/78

    CPC分类号： G01P15/0802 ,  G01P15/124 ,  G01P2015/0814

    摘要： It is an object to provide a method of fabrication for a semiconductor acceleration sensor which can prevent destruction of a movable portion during dicing. A sacrificial layer composed of silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the sacrificial layer. A polyimide film is applied on the movable member at room temperature and heated to approximately 350.degree. C. to harden. The movable member is supported by this polyimide film. Accordingly, etching liquid penetration holes are formed on the polyimide film. Further, the sacrificial layer disposed between the movable member and the silicon substrate is etched away by means of dipping the silicon substrate into hydrofluoric acid-based etching liquid. Thereafter, the silicon substrate is dipped into demineralized water to replace the etching liquid with demineralized water, and subsequently the silicon substrate is dried. Accordingly, the silicon substrate is diced and thereafter the polyimide film is etched away by O.sub.2 ashing.

    摘要翻译： 本发明的目的是提供一种半导体加速度传感器的制造方法，其可以防止在切割期间可动部分的破坏。 在硅衬底上形成由氧化硅膜构成的牺牲层，在牺牲层上形成由多晶硅构成的可动构件。 将聚酰亚胺膜在室温下涂布在可动件上并加热至约350℃以硬化。 可动构件由该聚酰亚胺膜支撑。 因此，在聚酰亚胺膜上形成蚀刻液体穿透孔。 此外，通过将硅衬底浸入氢氟酸蚀刻液中，设置在可移动部件和硅衬底之间的牺牲层被蚀刻掉。 此后，将硅衬底浸入软化水​​中以用软化水代替蚀刻液，随后将硅衬底干燥。 因此，对硅衬底进行切割，然后通过氧化物灰蚀蚀刻掉聚酰亚胺膜。

    Method for manufacturing magnetic sensor apparatus
    7.
    发明授权
    Method for manufacturing magnetic sensor apparatus 有权
    磁传感器装置的制造方法

    公开(公告)号：US07582489B2

    公开(公告)日：2009-09-01

    申请号：US12068988

    申请日：2008-02-14

    申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

    发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

    IPC分类号： H01L21/00 ,  G01B7/30

    CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

    摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

    摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

    Method for manufacturing magnetic sensor apparatus
    8.
    发明申请
    Method for manufacturing magnetic sensor apparatus 有权
    磁传感器装置的制造方法

    公开(公告)号：US20080145956A1

    公开(公告)日：2008-06-19

    申请号：US12068988

    申请日：2008-02-14

    申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

    发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

    IPC分类号： H01L21/00

    CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

    摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

    摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

    Method of producing semiconductor device by dicing
    9.
    发明授权
    Method of producing semiconductor device by dicing 失效
    通过切割制造半导体器件的方法

    公开(公告)号：US5998234A

    公开(公告)日：1999-12-07

    申请号：US825456

    申请日：1997-03-28

    申请人： Minoru Murata ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Seiichiro Ishiou

    发明人： Minoru Murata ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Seiichiro Ishiou

    IPC分类号： G01P15/12 ,  H01L21/301 ,  H01L21/78 ,  H01L29/06 ,  H01L29/84 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

    CPC分类号： H01L21/78 ,  H01L2224/16 ,  H01L29/0657 ,  H01L2924/01019 ,  H01L2924/10158 ,  H01L2924/10253

    摘要： On a back face of a silicon wafer before dicing, tapered grooves having sloped side walls are formed by anisotropic etching along with thin portions. Strain gauges are formed on each thin portion, thereby forming a sensor chip on the silicon wafer. The back face of the silicon wafer is attached to a self-adhesive seat. Thereafter, the silicon wafer is cut along the grooves by a dicing blade to divide it into each sensor chip. In dicing, the side faces of the dicing blade cut the sloped side walls of the tapered grooves. As a result, the silicon wafer is diced into individual sensor chip having no cracks and chippings.

    摘要翻译： 在切割之前的硅晶片的背面上，具有倾斜侧壁的锥形槽通过各向异性蚀刻以及薄的部分形成。 应变计形成在每个薄部分上，从而在硅晶片上形成传感器芯片。 硅晶片的背面安装在自粘座上。 此后，通过切割刀片沿着沟槽切割硅晶片，以将其划分成每个传感器芯片。 在切割中，切割刀片的侧面切割锥形槽的倾斜侧壁。 结果，将硅晶片切割成没有裂纹和碎屑的单独的传感器芯片。

    Acceleration sensor having coaxially-arranged fixed electrode and movable electrode
    10.
    发明授权
    Acceleration sensor having coaxially-arranged fixed electrode and movable electrode 失效
    具有同轴布置的固定电极和可动电极的加速度传感器

    公开(公告)号：US5864064A

    公开(公告)日：1999-01-26

    申请号：US717405

    申请日：1996-09-20

    申请人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

    发明人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

    IPC分类号： G01P15/00 ,  G01H1/00 ,  G01P15/02 ,  G01P15/08 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18

    CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P15/135 ,  G01P15/18

    摘要： An acceleration sensor is constructed by a substrate, a cylindrical dead-weight movable electrode to be displaced by acceleration, a fixed electrode from the inside of which a cylinder is hollowed, a cylindrical anchor arranged on the substrate for supporting the dead-weight movable electrode with elastic transformable structural material and beams. When acceleration is applied from the outside, the cylindrical detecting face of the dead-weight movable electrode and the cylindrical detected face of the fixed electrode are in contact on a two-dimensional plane parallel to the substrate and the acceleration sensor detects the contact. A radial interval between the detecting face of the dead-weight movable electrode and the detected face of the fixed electrode is set in view of the elastic modulus of the beams so that external force can be detected isotropically and the acceleration sensor detects acceleration on a two-dimensional plane nondirectionally.

    摘要翻译： 一个加速度传感器是由一个基板，一个被加速移位的一个圆柱形的自重的可移动电极构成的，一个固定的电极从一个圆柱体中空的一个固定的电极，一个设置在基板上的圆柱形的锚固件，用于支撑自重的可动电极 具有弹性可变形结构材料和梁。 当从外部施加加速度时，固定电极的圆柱形检测面和固定电极的圆柱形检测面在与基板平行的二维平面上接触，并且加速度传感器检测接触。 考虑到光束的弹性模量，设定了自重移动电极的检测面与固定电极的检测面之间的径向间隔，从而可以各向异性地检测外力，并且加速度传感器检测到二次加速度 非定向平面。