公开(公告)号：US20140311242A1

公开(公告)日：2014-10-23

申请号：US14162718

申请日：2014-01-23

Applicant: mCube Inc.

Inventor： TERRENCE LEE ,  WENHUA ZHANG ,  SUDHEER SRIDHARAMURTHY ,  SHINGO YONEOKA

IPC: G01C19/56 ,  G01P15/02

CPC classification number: G01C19/56 ,  B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01C19/5783 ,  G01P1/003 ,  G01P15/02 ,  G01P15/18 ,  G01P2015/0871 ,  G01P2015/088

Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

Abstract translation: 多轴集成MEMS惯性传感器装置。 该设备可以在单个芯片上包含一个集成的3轴陀螺仪和3轴加速度计，创建了6轴惯性传感器设备。 通过将加速度计装置添加到陀螺仪装置的中心，该结构在空间上有效地利用了芯片的设计区域。 设计架构可以是几何形状的矩形或方形形状，它利用整个芯片区域，并在一定的区域内最大化传感器尺寸。 MEMS集中在封装中，这有利于传感器的温度性能。 此外，集成的多轴惯性传感器装置的电接合焊盘可以配置在矩形芯片布局的四个角中。 该配置保证了设计的对称性和芯片面积的有效利用。

公开(公告)号：US20160052777A1

公开(公告)日：2016-02-25

申请号：US14930642

申请日：2015-11-02

Applicant: mCube Inc.

Inventor： TE-HSI "TERRENCE" LEE ,  SUDHEER S. SRIDHARAMURTHY ,  SHINGO YONEOKA ,  WENHUA ZHANG

IPC: B81B7/00

CPC classification number: B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

Abstract: An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.

Abstract translation: 集成电路包括具有表面区域的衬底构件和覆盖在表面区域上的CMOS IC层。 CMOS IC层具有至少一个CMOS器件。 集成电路还包括覆盖CMOS IC层的底部隔离层，覆盖在底部隔离层的一部分上的屏蔽层和覆盖在底部隔离层的一部分上的顶部隔离层。 底部隔离层包括顶部隔离层和屏蔽层之间的隔离区域。 集成电路还具有覆盖顶部隔离层，屏蔽层和底部隔离层的MEMS层。 MEMS层包括具有至少一个可移动结构和至少一个锚定结构的至少一个MEMS结构。 所述至少一个锚定结构耦合到所述顶部隔离层的一部分，并且所述至少一个可移动结构覆盖所述屏蔽层。

公开(公告)号：US20160039666A1

公开(公告)日：2016-02-11

申请号：US14887631

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： WENHUA ZHANG ,  Shingo Yoneoka

IPC: B81B7/02 ,  B81B7/00

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81C1/00293 ,  B81C1/00333 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01L21/56 ,  H01L41/1132

Abstract: A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

Abstract translation: 具有多个MEMS（微电子机械系统）器件的半导体器件包括具有第一MEMS器件和第二MEMS器件的半导体衬底，以及具有形成第一腔和第二腔的顶部和侧壁的封装衬底。 封装衬底在侧壁处结合到半导体衬底以将第一MEMS器件封装在第一腔中并将第二MEMS器件封装在第二腔中。 第二腔包括在封装衬底的侧壁中的与封装衬底和半导体衬底之间的界面相邻的凹陷区域处的至少一个存取通道。 通道被薄膜覆盖。 第一空腔处于第一大气压，第二空腔处于第二大气压。 第二空气压力与第一气压不同。

公开(公告)号：US20160039667A1

公开(公告)日：2016-02-11

申请号：US14887622

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： WENHUA ZHANG ,  SHINGO YONEOKA

IPC: B81C1/00 ,  H01L21/56

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81C1/00293 ,  B81C1/00333 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01L21/56 ,  H01L41/1132

Abstract: A method for fabricating a multiple MEMS device includes providing a semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel. The first MEMS is encapsulated within the first cavity and the second MEMS device is encapsulated within the second cavity. These devices is encapsulated within a first encapsulation environment at a first air pressure, and encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity is then subjected to a second encapsulating environment at a second air pressure via the channel of the second cavity.

Abstract translation: 一种用于制造多个MEMS器件的方法包括提供具有第一和第二MEMS器件的半导体衬底以及包括至少一个通道的具有第一腔和第二腔的封装晶片。 第一MEMS封装在第一腔内，第二MEMS器件被封装在第二腔内。 这些装置在第一空气压力下封装在第一封装环境内，并且在第一空气压力下将第一MEMS装置封装在第一空腔内。 然后第二腔内的第二MEMS器件经由第二腔的通道在第二空气压力下经受第二封装环境。

公开(公告)号：US20150090034A1

公开(公告)日：2015-04-02

申请号：US14497317

申请日：2014-09-25

Applicant: mCube Inc.

Inventor： WENHUA ZHANG

IPC: B81B7/00 ,  B81B7/02 ,  G01C19/56

CPC classification number: G01C19/5776 ,  B81B2201/0242 ,  H03B2200/0094

Abstract: A gyroscope device and method of operation therefor. The gyroscope device can include a power input, a charge pump portion coupled to the power input, a selection mechanism, a switching mechanism, an oscillator driving mechanism coupled to the switching mechanism, and an oscillator coupled to the charge pump portion and to the oscillator driving mechanism. The method of operation can include providing a first or second selection signal from a selection mechanism associated with the outputting of a DC input power or DC output power from a switching mechanism, respectively. These signals, along with an oscillator driving signal from an oscillator driving mechanism, can be used to initiate and maintain oscillation of an oscillator at a steady-state frequency within a predetermined range of frequencies.

Abstract translation: 陀螺仪装置及其操作方法。 陀螺仪装置可以包括功率输入，耦合到功率输入的电荷泵部分，选择机构，开关机构，耦合到开关机构的振荡器驱动机构，以及耦合到电荷泵部分和振荡器 驱动机制。 操作方法可以包括分别从与切换机构输出DC输入功率或DC输出功率相关的选择机构提供第一或第二选择信号。 这些信号以及来自振荡器驱动机构的振荡器驱动信号可以用于启动并保持在预定频率范围内的稳态频率的振荡器的振荡。

公开(公告)号：US20140311247A1

公开(公告)日：2014-10-23

申请号：US14163789

申请日：2014-01-24

Applicant: mCube Inc.

Inventor： WENHUA ZHANG ,  Sudheer Sridharamurthy ,  Shingo Yoneoka ,  Terrence Lee

IPC: B81B3/00

CPC classification number: G01C19/574

Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

Abstract translation: MEMS速率传感器装置。 在一个实施例中，传感器装置包括配置在CMOS衬底上的MEMS速率传感器。 MEMS速率传感器可以包括具有四个驱动器元件的驱动器组和具有六个感测元件的传感器组，用于三轴旋转感测。 该传感器结构允许驱动质量中的低阻尼和感测质量中的高阻尼，这对于MEMS速率传感器设计是理想的。 低驱动器阻尼有利于MEMS速率功耗和性能，具有低驱动电位以实现高振荡幅度。

公开(公告)号：US20140227816A1

公开(公告)日：2014-08-14

申请号：US14102465

申请日：2013-12-10

Applicant: mCube Inc.

Inventor： WENHUA ZHANG ,  Shingo Yoneoka

IPC: B81C1/00

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81C1/00293 ,  B81C1/00333 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01L21/56 ,  H01L41/1132

Abstract: A method for fabricating a multiple MEMS device. A semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel, can be provided. The first MEMS can be encapsulated within the first cavity and the second MEMS device can be encapsulated within the second cavity. These devices can be encapsulated within a provided first encapsulation environment at a first air pressure, encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity can then be subjected to a provided second encapsulating environment at a second air pressure via the channel of the second cavity.

Abstract translation: 一种用于制造多个MEMS器件的方法。 可以提供具有第一和第二MEMS器件的半导体衬底以及包括至少一个通道的具有第一腔和第二腔的封装晶片。 第一MEMS可以封装在第一腔内，并且第二MEMS器件可被封装在第二腔内。 这些装置可以以第一空气压力封装在所提供的第一封装环境内，在第一空气压力下将第一MEMS装置封装在第一空腔内。 然后可以在第二空腔内的第二MEMS装置经由第二空腔的通道在第二空气压力下经受所提供的第二封装环境。